Calculation of the electron and hole impact ionization rate for wurtzite AlN and GaN

2010 ◽  
Vol 25 (11) ◽  
pp. 115010 ◽  
Author(s):  
G R Li ◽  
Z X Qin ◽  
G F Luo ◽  
B Shen ◽  
G Y Zhang
Keyword(s):  
Impact Ionization ◽  
Ionization Rate ◽  
Impact Ionization Rate

Influence of small variation in impact ionization rate data on simulation of 4H-SiC IMPATT

2012 ◽  
Author(s):  
S. R. Pattanaik ◽  
J. Pradhan ◽  
S. K. Swain ◽  
P. Panda ◽  
G. N. Dash
Keyword(s):  
Impact Ionization ◽  
Small Variation ◽  
Ionization Rate ◽  
Rate Data ◽  
Impact Ionization Rate

Impact ionization rate near thresholds in Si

1994 ◽  
Vol 75 (10) ◽  
pp. 5102-5105 ◽  
Author(s):  
Nobuyuki Sano ◽  
Akira Yoshii
Keyword(s):  
Impact Ionization ◽  
Ionization Rate ◽  
Impact Ionization Rate

scholarly journals A Low Impact Ionization Rate Poly-Si TFT with a Current and Electric Field Split Design

Coatings ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 514 ◽  
Author(s):  
Feng-Tso Chien ◽  
Kuang-Po Hsueh ◽  
Zhen-Jie Hong ◽  
Kuan-Ting Lin ◽  
Yao-Tsung Tsai ◽  
...  
Keyword(s):  
Thin Film ◽  
Electric Field ◽  
Impact Ionization ◽  
Thin Film Transistor ◽  
Ionization Rate ◽  
Field Plate ◽  
Current Path ◽  
Plate Design ◽  
Impact Ionization Rate ◽  
A Current

In this study, a novel low impact ionization rate (low-IIR) poly-Si thin film transistor featuring a current and electric field split (CES) structure with bottom field plate (BFP) and partial thicker channel raised source/drain (RSD) designs is proposed and demonstrated. The bottom field plate design can allure the electron and alter the electron current path to evade the high electric field area and therefore reduce the device IIR and suppress the kink effect. A two-dimensional device simulator was applied to describe and compare the current path, electric field magnitude distributions, and IIR of the proposed structure and conventional devices. In addition, the advantages of a partial thicker channel RSD design are present, and the leakage current of CES-thin-film transistor (TFT) can be reduced and the ON/OFF current ratio be improved, owing to a smaller drain electric field.

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