Influence of the substrate voltage on the random telegraph signal parameters in submicron n -channel metal-oxide-semiconductor field-effect transistors under a constant inversion charge density

N.B. Lukyanchikova; M.V. Petrichuk; N.P. Garbar; E. Simoen; C. Claeys

doi:10.1007/s003390050058

Influence of the substrate voltage on the random telegraph signal parameters in submicron n -channel metal-oxide-semiconductor field-effect transistors under a constant inversion charge density

Applied Physics A ◽

10.1007/s003390050058 ◽

2000 ◽

Vol 70 (3) ◽

pp. 345-353 ◽

Cited By ~ 26

Author(s):

N.B. Lukyanchikova ◽

M.V. Petrichuk ◽

N.P. Garbar ◽

E. Simoen ◽

C. Claeys

Keyword(s):

Metal Oxide ◽

Charge Density ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Signal ◽

Signal Parameters ◽

Inversion Charge

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Influence of mobility fluctuations on random telegraph signal amplitude in n-channel metal–oxide–semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.366200 ◽

1997 ◽

Vol 82 (9) ◽

pp. 4621-4628 ◽

Cited By ~ 13

Author(s):

A. Godoy ◽

F. Gámiz ◽

A. Palma ◽

J. A. Jiménez-Tejada ◽

J. Banqueri ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Signal Amplitude ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Signal ◽

Mobility Fluctuations

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Multi-frequency inversion-charge pumping for charge separation and mobility analysis in high-k/InGaAs metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.4936313 ◽

2015 ◽

Vol 118 (20) ◽

pp. 204107 ◽

Cited By ~ 2

Author(s):

V. Djara ◽

K. Cherkaoui ◽

M. A. Negara ◽

P. K. Hurley

Keyword(s):

Metal Oxide ◽

Charge Separation ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Mobility Analysis ◽

Charge Pumping ◽

High K ◽

Inversion Charge

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Random telegraph signal amplitude in submicron n-channel metal oxide semiconductor field effect transistors

Applied Physics Letters ◽

10.1063/1.118943 ◽

1997 ◽

Vol 70 (16) ◽

pp. 2153-2155 ◽

Cited By ~ 9

Author(s):

A. Godoy ◽

F. Gámiz ◽

A. Palma ◽

J. A. Jiménez-Tejada ◽

J. E. Carceller

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Signal Amplitude ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Signal

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Impact of the free electron distribution on the random telegraph signal capture kinetics in submicron n-metal–oxide–semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.122476 ◽

1998 ◽

Vol 73 (17) ◽

pp. 2444-2446 ◽

Cited By ~ 14

Author(s):

N. B. Lukyanchikova ◽

M. V. Petrichuk ◽

N. P. Garbar ◽

E. Simoen ◽

C. Claeys

Keyword(s):

Metal Oxide ◽

Free Electron ◽

Field Effect ◽

Electron Distribution ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Signal

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Giant random telegraph signal generated by single charge trapping in submicron n-metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.2939272 ◽

2008 ◽

Vol 103 (12) ◽

pp. 123707 ◽

Cited By ~ 16

Author(s):

Enrico Prati ◽

Marco Fanciulli ◽

Giorgio Ferrari ◽

Marco Sampietro

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Charge Trapping ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Single Charge ◽

Random Telegraph Signal

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Anomalous Random Telegraph Signal Extractions from a Very Large Number of n-Metal Oxide Semiconductor Field-Effect Transistors Using Test Element Groups with 0.47 Hz–3.0 MHz Sampling Frequency

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c044 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C044 ◽

Cited By ~ 9

Author(s):

Kenichi Abe ◽

Takafumi Fujisawa ◽

Akinobu Teramoto ◽

Shunichi Watabe ◽

Shigetoshi Sugawa ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Sampling Frequency ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Test Element ◽

Random Telegraph Signal

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The decrease of ‘‘random telegraph signal’’ noise in metal‐oxide‐semiconductor field‐effect transistors when cycled from inversion to accumulation

Journal of Applied Physics ◽

10.1063/1.351145 ◽

1992 ◽

Vol 71 (4) ◽

pp. 2028-2029 ◽

Cited By ~ 51

Author(s):

B. Dierickx ◽

E. Simoen

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Signal ◽

Signal Noise

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Investigation of piezoresistive effect in p-channel metal–oxide–semiconductor field-effect transistors fabricated on circular silicon-on-insulator diaphragms using cost-effective minimal-fab process

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.06hd03 ◽

2018 ◽

Vol 57 (6S1) ◽

pp. 06HD03 ◽

Cited By ~ 3

Author(s):

Yongxun Liu ◽

Hiroyuki Tanaka ◽

Norio Umeyama ◽

Kazuhiro Koga ◽

Sommawan Khumpuang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Cost Effective ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Piezoresistive Effect

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Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with La2O3 gate dielectric

Journal of Applied Physics ◽

10.1063/1.2356902 ◽

2006 ◽

Vol 100 (7) ◽

pp. 074108 ◽

Cited By ~ 13

Author(s):

Chih-Hsiang Hsu ◽

Ming-Tsong Wang ◽

Joseph Ya-Min Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics

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Si-based Spin Metal-Oxide-Semiconductor Field-Effect Transistors with an Inversion Channel

ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC) ◽

10.1109/essderc.2019.8901832 ◽

2019 ◽

Author(s):

Ryosho Nakane ◽

Shoichi Sato ◽

Masaaki Tanaka

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel

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