scholarly journals Auto-calibration of capacitive MEMS accelerometers based on pull-in voltage

2011 ◽  
Vol 17 (3) ◽  
pp. 429-436 ◽  
Author(s):  
L. A. Rocha ◽  
R. A. Dias ◽  
E. Cretu ◽  
L. Mol ◽  
R. F. Wolffenbuttel
Integration ◽  
2017 ◽  
Vol 59 ◽  
pp. 247-254 ◽  
Author(s):  
Zongwei Li ◽  
Xingyin Xiong ◽  
Xiong Liu ◽  
Kedu Han ◽  
Ning Cong ◽  
...  

2017 ◽  
Vol 92 (3) ◽  
pp. 453-465 ◽  
Author(s):  
M. De Matteis ◽  
A. Pezzotta ◽  
M. Sabatini ◽  
M. Grassi ◽  
M. Croce ◽  
...  

Micromachines ◽  
2018 ◽  
Vol 9 (10) ◽  
pp. 488 ◽  
Author(s):  
Zhiliang Qiao ◽  
Boris Boom ◽  
Anne-Johan Annema ◽  
Remco Wiegerink ◽  
Bram Nauta

Interface circuits for capacitive MEMS accelerometers are conventionally based on charge-based approaches. A promising alternative to these is provided by frequency-based readout techniques that have some unique advantages as well as a few challenges associated with them. This paper addresses these techniques and presents a derivation of the fundamental resolution limits that are imposed on them by phase noise. Starting with an overview of basic operating principles, associated properties and challenges, the discussions then focus on the fundamental trade-offs between noise, power dissipation and signal bandwidth (BW) for the LC-oscillator-based frequency readout and for the conventional charge-based switched-capacitor (SC) readout. Closed-form analytical formulas are derived to facilitate a fair comparison between the two approaches. Benchmarking results indicate that, with the same bandwidth requirement, charge-based readout circuits are more suitable when optimizing for noise performance, while there is still some room for frequency-based techniques when optimizing for power consumption, especially when flicker phase noise can be mitigated.


VLSI Design ◽  
2008 ◽  
Vol 2008 ◽  
pp. 1-7 ◽  
Author(s):  
L. A. Rocha ◽  
L. Mol ◽  
E. Cretu ◽  
R. F. Wolffenbuttel ◽  
J. Machado da Silva

A test technique for capacitive MEMS accelerometers and electrostatic microactuators, based on the measurement of pull-in voltages and resonance frequency, is described. Using this combination of measurements, one can estimate process-induced variations in the device layout dimensions as well as deviations from nominal value in material properties, which can be used either for testing or device diagnostics purposes. Measurements performed on fabricated devices confirm that the 250 nm overetch observed on SEM images can be correctly estimated using the proposed technique.


2009 ◽  
Vol 26 (1) ◽  
pp. 111-125 ◽  
Author(s):  
Norbert Dumas ◽  
Florence Azaïs ◽  
Frédérick Mailly ◽  
Pascal Nouet

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