Experimental study of gamma radiation induced degradation of a piezoresistive pressure sensor

2018 ◽  
Vol 24 (8) ◽  
pp. 3299-3305 ◽  
Author(s):  
Vinod Belwanshi ◽  
Sebin Philip ◽  
Anita Topkar
1994 ◽  
Vol 20 (16) ◽  
pp. 2493-2508 ◽  
Author(s):  
E. Ciranni Signoretti ◽  
L. Valvo ◽  
P. Fattibene ◽  
S. Onori ◽  
M. Pantaloni

Genetics ◽  
2003 ◽  
Vol 164 (1) ◽  
pp. 323-334
Author(s):  
S B Preuss ◽  
A B Britt

Abstract Although it is well established that plant seeds treated with high doses of gamma radiation arrest development as seedlings, the cause of this arrest is unknown. The uvh1 mutant of Arabidopsis is defective in a homolog of the human repair endonuclease XPF, and uvh1 mutants are sensitive to both the toxic effects of UV and the cytostatic effects of gamma radiation. Here we find that gamma irradiation of uvh1 plants specifically triggers a G2-phase cell cycle arrest. Mutants, termed suppressor of gamma (sog), that suppress this radiation-induced arrest and proceed through the cell cycle unimpeded were recovered in the uvh1 background; the resulting irradiated plants are genetically unstable. The sog mutations fall into two complementation groups. They are second-site suppressors of the uvh1 mutant's sensitivity to gamma radiation but do not affect the susceptibility of the plant to UV radiation. In addition to rendering the plants resistant to the growth inhibitory effects of gamma radiation, the sog1 mutation affects the proper development of the pollen tetrad, suggesting that SOG1 might also play a role in the regulation of cell cycle progression during meiosis.


1998 ◽  
Vol 238 (1-2) ◽  
pp. 43-51 ◽  
Author(s):  
E. M. Abdel-Bary ◽  
A. M. Dessouki ◽  
E. M. El-Nesr ◽  
M. M. Hassan

2013 ◽  
Vol 313-314 ◽  
pp. 666-670 ◽  
Author(s):  
K.J. Suja ◽  
Bhanu Pratap Chaudhary ◽  
Rama Komaragiri

MEMS (Micro Electro Mechanical System) are usually defined as highly miniaturized devices combining both electrical and mechanical components that are fabricated using integrated circuit batch processing techniques. Pressure sensors are usually manufactured using square or circular diaphragms of constant thickness in the order of few microns. In this work, a comparison between circular diaphragm and square diaphragm indicates that square diaphragm has better perspectives. A new method for designing diaphragm of the Piezoresistive pressure sensor for linearity over a wide pressure range (approximately double) is designed, simulated and compared with existing single diaphragm design with respect to diaphragm deflection and sensor output voltage.


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