Design and Simulation of Pressure Sensor for Ocean Depth Measurements

2013 ◽  
Vol 313-314 ◽  
pp. 666-670 ◽  
Author(s):  
K.J. Suja ◽  
Bhanu Pratap Chaudhary ◽  
Rama Komaragiri
Keyword(s):  
Pressure Sensor ◽  
Integrated Circuit ◽  
Output Voltage ◽  
Pressure Sensors ◽  
Micro Electro Mechanical System ◽  
Constant Thickness ◽  
Piezoresistive Pressure Sensor ◽  
Wide Pressure Range ◽  
Processing Techniques ◽  
Wide Pressure

MEMS (Micro Electro Mechanical System) are usually defined as highly miniaturized devices combining both electrical and mechanical components that are fabricated using integrated circuit batch processing techniques. Pressure sensors are usually manufactured using square or circular diaphragms of constant thickness in the order of few microns. In this work, a comparison between circular diaphragm and square diaphragm indicates that square diaphragm has better perspectives. A new method for designing diaphragm of the Piezoresistive pressure sensor for linearity over a wide pressure range (approximately double) is designed, simulated and compared with existing single diaphragm design with respect to diaphragm deflection and sensor output voltage.

A SOI-MEMS Piezoresistive Atmosphere Pressure Sensor

2013 ◽  
Vol 562-565 ◽  
pp. 394-397
Author(s):  
Li Dong Du ◽  
Zhan Zhao ◽  
Li Xiao ◽  
Meng Ying Zhang ◽  
Zhen Fang
Keyword(s):  
Silicon Wafer ◽  
Pressure Sensor ◽  
Strain Gauge ◽  
Pressure Sensors ◽  
Micro Electro Mechanical System ◽  
Silicon On Insulator ◽  
Anodic Bonding ◽  
Atmosphere Pressure ◽  
Piezoresistive Pressure Sensor ◽  
The Cost

In this paper, a SOI-MEMS (silicon on insulator- micro electro mechanical system) pizeoresistive atmosphere pressure sensor is presented using anodic bonding. Differently from the prevailing fabrication process of silicon piezoresistive pressure sensor: the device layer monocrystalline of SOI silicon wafer is used as the strain gauge with a simple deep etching process; and the SiO2 layer of SOI silicon wafer as the insulator between strain gauge and substrate. The whole fabrication processes of the designed sensor are very simple, and can reduce the cost of sensor. The Pressure-Voltage characteristic test results suggest a precision within 0.14% in linear fitting. It is shown that the temperature coefficient is 2718ppm/°C from the Typical temperature curve of the pressure sensors.

scholarly journals Pressure Sensor Behavioral Search: Simulation Research for Aerospace Application

2019 ◽  
Vol 8 (2S3) ◽  
pp. 712-717
Keyword(s):  
Pressure Sensor ◽  
Pressure Sensors ◽  
Engineering Application ◽  
Micro Electro Mechanical System ◽  
Sensor Data ◽  
Sensing Element ◽  
Simulation Research ◽  
Piezoresistive Pressure Sensor ◽  
The Right ◽  
Atmospheric Changes

Pressure sensors are used to monitor the performance characteristics of various systems within the appliance industry. Temperature, humidity altitude are the significant parameters to get the right information about atmospheric pressure. These geographical constraints affect the value of pressure. The pressure sensors are designed in such way that it should give correct information about all atmospheric changes. Micro Electro Mechanical System (MEMS) having piezoresistive pressure sensor has a various chip structure and sensing element. This chip structure helps to get various sensitivity results. Right now there are no results regarding impact of various chip structure, temperature and altitude variation on pressure sensors. A calibration check should be carried out at the chosen intervals for these pressure sensors to get accuracy. This paper helps to get information about how temperature and altitude affect the value of pressure and how sensor data is visualized to the user using android application. This analysis can be used for aerospace engineering application while airplane takes off or while landing

The Electricity Design of Pressure Sensor

2013 ◽  
Vol 438-439 ◽  
pp. 539-542
Author(s):  
Tao Li ◽  
Guo Jing Ren ◽  
Li Feng Qi ◽  
Zhi Min Liu
Keyword(s):  
Mechanical System ◽  
Pressure Sensor ◽  
Wheatstone Bridge ◽  
Micro Electro Mechanical System ◽  
Open Loop ◽  
Bridge Design ◽  
Piezoresistive Pressure Sensor ◽  
Working Principle

The relative discussion and research of Micro-Electro-Mechanical System (MEMS) and pressure sensor is carried out in this paper. The working principle of pressure sensor is analyzed, and the cantilever piezoresistive pressure sensor is studied in details. The electricity design of pressure sensor is researched. The open loop Wheatstone-bridge design is adopted in this paper, which adds the freedom of disposing circuit.

An Innovative Technology for Measuring The Dynamic Characteristics of Pressure Sensors

2006 ◽  
Vol 505-507 ◽  
pp. 1057-1062 ◽  
Author(s):  
Ho Chang ◽  
Mu Jung Kao ◽  
Tsing Tshih Tsung ◽  
J.L. Wu
Keyword(s):  
Dynamic Characteristics ◽  
Spectrum Analysis ◽  
Pressure Sensor ◽  
High Frequency ◽  
Pressure Wave ◽  
Hydraulic System ◽  
Output Voltage ◽  
Pressure Sensors ◽  
Innovative Technology ◽  
Wave Generator

This study developed a square-like pressure wave generator as an excitation source to test dynamic characteristics of pressure sensors. The developed generator can generate a square-like pressure wave of as high as 2 kHz and can achieve high-frequency switching by utilizing the differential principle through a series of mechanical rotations between the revolving spindle and revolving ring. The square-like pressure wave generated is input into the hydraulic system while the output voltage signals given by the pressure sensor can be analyzed by spectrum analysis to obtain dynamic characteristics of the pressure sensor

Modeling and Simulation of the Thermal Drift Characteristics of the Piezoresistive Pressure Sensor

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000373-000378
Author(s):  
R. Otmani ◽  
N. Benmoussa ◽  
K. Ghaffour
Keyword(s):  
Thermal Behavior ◽  
Modeling And Simulation ◽  
Pressure Sensor ◽  
Pressure Sensors ◽  
High Sensitivity ◽  
Thermal Drift ◽  
Piezoresistive Pressure Sensor ◽  
Output Characteristics ◽  
Piezoresistive Pressure Sensors

Piezoresistive pressure sensors based on Silicon have a large thermal drift because of their high sensitivity to temperature (ten times more sensitive to temperature than metals). So the study of the thermal behavior of these sensors is essential to define the parameters that cause the drift of the output characteristics. In this study, we adopted the behavior of 2nd degree gauges depending on the temperature. Then we model the thermal behavior of the sensor and its characteristics.

scholarly journals Nano Carbon Black-Based High Performance Wearable Pressure Sensors

Nanomaterials ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 664 ◽  
Author(s):  
Junsong Hu ◽  
Junsheng Yu ◽  
Ying Li ◽  
Xiaoqing Liao ◽  
Xingwu Yan ◽  
...  
Keyword(s):  
Carbon Black ◽  
Pressure Sensor ◽  
High Performance ◽  
Large Scale ◽  
Pressure Sensors ◽  
High Sensitivity ◽  
Wearable Electronics ◽  
Atmospheric Pollutant ◽  
Piezoresistive Pressure Sensor ◽  
Nano Carbon

The reasonable design pattern of flexible pressure sensors with excellent performance and prominent features including high sensitivity and a relatively wide workable linear range has attracted significant attention owing to their potential application in the advanced wearable electronics and artificial intelligence fields. Herein, nano carbon black from kerosene soot, an atmospheric pollutant generated during the insufficient burning of hydrocarbon fuels, was utilized as the conductive material with a bottom interdigitated textile electrode screen printed using silver paste to construct a piezoresistive pressure sensor with prominent performance. Owing to the distinct loose porous structure, the lumpy surface roughness of the fabric electrodes, and the softness of polydimethylsiloxane, the piezoresistive pressure sensor exhibited superior detection performance, including high sensitivity (31.63 kPa−1 within the range of 0–2 kPa), a relatively large feasible range (0–15 kPa), a low detection limit (2.26 pa), and a rapid response time (15 ms). Thus, these sensors act as outstanding candidates for detecting the human physiological signal and large-scale limb movement, showing their broad range of application prospects in the advanced wearable electronics field.

Transparent Pressure Sensor with High Linearity over a Wide Pressure Range for 3D Touch Screen Applications

2020 ◽  
Vol 12 (14) ◽  
pp. 16691-16699 ◽  
Author(s):  
Han Byul Choi ◽  
Jinwon Oh ◽  
Youngsoo Kim ◽  
Mikhail Pyatykh ◽  
Jun Chang Yang ◽  
...  
Keyword(s):  
Pressure Sensor ◽  
Pressure Range ◽  
Touch Screen ◽  
High Linearity ◽  
Wide Pressure Range ◽  
Wide Pressure

Design and Optimization of a Highly Sensitive and Linearity Piezoresistive Pressure Sensor Based on a Combination of Cross Beam-Peninsula-Membrane Structure

2017 ◽  
Author(s):  
Tran Anh Vang ◽  
Xianmin Zhang ◽  
Benliang Zhu
Keyword(s):  
Pressure Sensor ◽  
Pressure Sensors ◽  
Single Crystal Silicon ◽  
High Sensitivity ◽  
Crystal Silicon ◽  
Nonlinearity Error ◽  
Trade Off ◽  
Design And Optimization ◽  
Piezoresistive Pressure Sensor ◽  
Piezoresistive Pressure Sensors

The sensitivity and linearity trade-off problem has become the hotly important issues in designing the piezoresistive pressure sensors. To solve these trade-off problems, this paper presents the design, optimization, fabrication, and experiment of a novel piezoresistive pressure sensor for micro pressure measurement based on a combined cross beam - membrane and peninsula (CBMP) structure diaphragm. Through using finite element method (FEM), the proposed sensor performances as well as comparisons with other sensor structures are simulated and analyzed. Compared with the cross beam-membrane (CBM) structure, the sensitivity of CBMP structure sensor is increased about 38.7 % and nonlinearity error is reduced nearly 8%. In comparison with the peninsula structure, the maximum non-linearity error of CBMP sensor is decreased about 40% and the maximum deflection is extremely reduced 73%. Besides, the proposed sensor fabrication is performed on the n-type single crystal silicon wafer. The experimental results of the fabricated sensor with CBMP membrane has a high sensitivity of 23.4 mV/kPa and a low non-linearity of −0.53% FSS in the pressure range 0–10 kPa at the room temperature. According to the excellent performance, the sensor can be applied to measure micro-pressure lower than 10 kPa.

Investigation of Thermal Effect of Packaged CMOS Compatible Pressure Sensor

Manufacturing ◽  
2002 ◽  
Author(s):  
Chih-Tang Peng ◽  
Ji-Cheng Lin ◽  
Chun-Te Lin ◽  
Kuo-Ning Chiang
Keyword(s):  
Pressure Sensor ◽  
Output Voltage ◽  
Experimental Validation ◽  
Experimental Result ◽  
Pressure Loading ◽  
Simulation Data ◽  
Sensor Performance ◽  
Piezoresistive Pressure Sensor ◽  
Simulation Results ◽  
Stress Buffer

In this study, a packaged silicon base piezoresistive pressure sensor with thermal stress buffer is designed, fabricated, and measured. A finite element method (FEM) is adopted for design and experimental validation of the sensor performance. Thermal and pressure loading on the sensor is applied to make a comparison between sensor experimental and simulation results. Furthermore, a method that transfers simulation stress data into output voltage is proposed in this study, the results indicate that the experimental result coincides with simulation data.

scholarly journals A Fully-Differential Switched-Capacitor Dual-Slope Capacitance-To-Digital Converter (CDC) for a Capacitive Pressure Sensor

Sensors ◽  
2019 ◽  
Vol 19 (17) ◽  
pp. 3673
Author(s):  
Christopher Rogi ◽  
Cesare Buffa ◽  
Niccolo De Milleri ◽  
Richard Gaggl ◽  
Enrique Prefasi
Keyword(s):  
Pressure Sensor ◽  
Integrated Circuit ◽  
Ambient Air ◽  
Micro Electro Mechanical System ◽  
Switched Capacitor ◽  
Capacitive Pressure Sensor ◽  
Fully Differential ◽  
Sensor Model ◽  
Low Performance ◽  
On Chip

This article focuses on a proposed Switched-Capacitor Dual-Slope based CDC. Special attention is paid to the measurement setup using a real pressure sensor. Performance scaling potential as well as dead zones are pointed out and discussed. In depth knowledge of the physical sensor behavior is key to design an optimal readout circuit. While this is true for high-end applications, low-performance IoT (Internet of Things) sensors aim at moderate resolution with very low power consumption. This article also provides insights into basic MEMS (Micro-Electro-Mechanical-System) physics. Based on that, an ambient air pressure sensor model for SPICE (Simulation-Program-with-Integrated-Circuit-Emphasis) circuit simulators is presented. The converter concept was proven on silicon in a 0.13 μ m process using both a real pressure sensor and an on-chip dummy MEMS bridge. A 3.2-ms measurement results in 13-bit resolution while consuming 35 μ A from a 1.5-V supply occupying 0.148 mm2. A state-of-the-art comparison identifies potential room for improvements towards hybrid solutions, which is proposed in subsequent publications already.

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