Shear test evaluation of the mechanical reliability of micro bumps in semiconductors

Author(s):  
Yeungjung Cho ◽  
Mibbeum Hahn ◽  
Hyunsik Jeong ◽  
Gunhee Jang
1985 ◽  
Vol 53 (4) ◽  
pp. 586-591 ◽  
Author(s):  
Spiridon Doukoudakis ◽  
Asterios Doukoudakis ◽  
Steven Rasmussen ◽  
Bernard L. Abrams

1990 ◽  
Vol 25 (8) ◽  
pp. 3714-3722 ◽  
Author(s):  
Y. M. Aravot ◽  
Lelia Arcan ◽  
M. E. Arcan ◽  
Ana Albu-Yaron

2008 ◽  
Vol 85 (10) ◽  
pp. 1967-1970 ◽  
Author(s):  
Seong-jae Jeon ◽  
Seungmin Hyun ◽  
Hak-Joo Lee ◽  
Jong-Woong Kim ◽  
Sang-Su Ha ◽  
...  

2007 ◽  
Vol 22 (3) ◽  
pp. 770-776 ◽  
Author(s):  
J.Y. Kim ◽  
Y.C. Sohn ◽  
Jin Yu

Copper was supplied to Sn–3.5Ag by electroplating Cu/Ni double under-bump metallization (UBM), and the amount of Cu was controlled by varying the Cu UBM thickness. Supposed Cu contents in the solder were; 0.2, 0.5, and 1.0 wt%, respectively, and the solder joint microstructure was investigated after 1, 5, and 10 reflows. In the case of specimens with 0.2 and 1.0 wt% Cu, only one type of intermetallic compound (IMC) formed, either (Cu,Ni)6Sn5 or (Ni,Cu)3Sn4, while two types formed in specimen with 0.5 wt% Cu. No correlation could be found between the solder joint microstructure and the ball shear test. However, drop test results showed two opposite trends. The drop resistance of 0.2 and 1.0 wt% Cu specimens was quite good initially but degraded dramatically with multiple reflows, in contrast to that of the 0.5 wt% Cu specimen, which was very poor after one reflow but improved substantially later on. The former was ascribed to thickening of IMC during reflow, while the latter was related to (Ni,Cu)3Sn4 thickening beneath (Cu,Ni)6Sn5 and subsequent spalling of (Cu,Ni)6Sn5 from (Ni,Cu)3Sn4.


Author(s):  
Y. J. Cho ◽  
M. B. Han ◽  
J. S. Bae ◽  
I. J. Choi ◽  
D. S. Choi ◽  
...  

Abstract Micro bump in semiconductor devices is an element to connect silicon dies with through-silicon via to be stacked on each other. The failure of these micro bumps is directly related to the reliability of semiconductors. Of the various mechanical tests, a shear test is commonly used to evaluate mechanical reliability because it provides relatively simple and reliable evaluation data. This paper investigated the failure modes of micro bump due to the structure of micro bumps and tip speed through finite element analysis and shear test. A shear test was conducted for four structures of micro bumps with the radius of 25 μm using a Dage4000+ bond tester under two tip speeds. A finite element model representing the shear test was developed by ANSYS and the analysis was conducted under the same conditions as the experiment. It shows that tungsten via are effective in increasing shear strength of micro bump. Moreover, it also proposes a robust design to increase shear strength of a micro bump.


Landslides ◽  
1994 ◽  
Vol 31 (1) ◽  
pp. 10-20_1
Author(s):  
Ryojiro KISHIMOTO
Keyword(s):  

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