Stress-induced electric potential barriers in thickness-stretch deformations of a piezoelectric semiconductor plate

2021 ◽  
Author(s):  
Yilin Qu ◽  
Feng Jin ◽  
Jiashi Yang
Materials ◽  
2021 ◽  
Vol 14 (14) ◽  
pp. 3926
Author(s):  
Mengen Li ◽  
Qiaoyun Zhang ◽  
Bingbing Wang ◽  
Minghao Zhao

The performance of devices fabricated from piezoelectric semiconductors, such as sensors and actuators in microelectromechanical systems, is superior; furthermore, plate structures are the core components of these smart devices. It is thus important to analyze the electromechanical coupling properties of piezoelectric semiconductor nanoplates. We established a nanoplate model for the piezoelectric semiconductor plate structure by extending the first-order shear deformation theory. The flexural vibrations of nanoplates subjected to a transversely time-harmonic force were investigated. The vibrational modes and natural frequencies were obtained by using the matrix eigenvalue solver in COMSOL Multiphysics 5.3a, and the convergence analysis was carried out to guarantee accurate results. In numerical cases, the tuning effect of the initial electron concentration on mechanics and electric properties is deeply discussed. The numerical results show that the initial electron concentration greatly affects the natural frequency and electromechanical fields of piezoelectric semiconductors, and a high initial electron concentration can reduce the electromechanical fields and the stiffness of piezoelectric semiconductors due to the electron screening effect. We analyzed the flexural vibration of typical piezoelectric semiconductor plate structures, which provide theoretical guidance for the development of new piezotronic devices.


2021 ◽  
Vol 48 (4-6) ◽  
pp. 72-82
Author(s):  
Shuai Ju ◽  
Haifeng Zhang ◽  
Jiashi Yang

2019 ◽  
Vol 126 (12) ◽  
pp. 125701 ◽  
Author(s):  
Ru Tian ◽  
Jinxi Liu ◽  
Ernian Pan ◽  
Yuesheng Wang ◽  
Ai Kah Soh

1990 ◽  
Vol 04 (22) ◽  
pp. 1411-1414 ◽  
Author(s):  
T. OSHIO ◽  
Y. SAKAI ◽  
S. EHARA

Grain boundaries and their electric potential were studied in connection with the electric conduction in polycrystalline copper using a scanning tunneling microscope (STM). It was found that the grain boundaries consist mainly of cuprous oxide ( Cu 2 O ) and electric potential barriers are formed at most grain boundaries.


2020 ◽  
Vol 101 (5) ◽  
Author(s):  
Zhiyuan Chen ◽  
Yibai Wang ◽  
Haibin Tang ◽  
Junxue Ren ◽  
Min Li ◽  
...  

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