The influence of DMSO on the formation and photoelectrochemical properties of CdS thin films by electrodeposition method

2016 ◽  
Vol 21 (1) ◽  
pp. 19-26 ◽  
Author(s):  
Qianqian Shen ◽  
Jinbo Xue ◽  
Xuguang Liu ◽  
Husheng Jia ◽  
Xuefeng Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectrochemical Properties ◽  
Electrodeposition Method ◽  
Cds Thin Films

Synthesis, characterization and photoelectrochemical properties of n-CdS thin films

2011 ◽  
Vol 406 (10) ◽  
pp. 1865-1871 ◽  
Author(s):  
M.A. Barote ◽  
A.A. Yadav ◽  
E.U. Masumdar
Keyword(s):  
Thin Films ◽  
Photoelectrochemical Properties ◽  
Cds Thin Films

scholarly journals Structural and Photoelectrochemical Properties of Cu-Doped CdS Thin Films Prepared by Ultrasonic Spray Pyrolysis

2013 ◽  
Vol 2013 ◽  
pp. 1-7 ◽  
Author(s):  
Rui Xie ◽  
Jinzhan Su ◽  
Mingtao Li ◽  
Liejin Guo
Keyword(s):  
Thin Films ◽  
Spray Pyrolysis ◽  
Indium Tin Oxide ◽  
Ultrasonic Spray Pyrolysis ◽  
Annealing Treatment ◽  
Cost Effective ◽  
Photoelectrochemical Properties ◽  
Ultrasonic Spray ◽  
Cds Thin Films ◽  
P Type

Cu-doped CdS thin films of variable doping levels have been deposited on indium tin oxide-coated glass substrate by simple and cost-effective ultrasonic spray pyrolysis. The influences of doping concentration and annealing treatment on the structure and photoelectrochemical properties of the films were investigated. The deposited films were characterized by XRD, SEM, and UV-Vis spectra. Moreover, the films were investigated by electrochemical and photoelectrochemical measurements with regard to splitting water for solar energy conversion. The results showed that the Cu impurity can cause a structural change and red shift of absorption edge. It was found that the photocurrent can be improved by the Cu-doping process for the unannealed films under the weak illumination. The unannealed 5 at.% Cu-doped sample obtained the maximum IPCE, which achieved about 45% at 0.3 V versus SCE potential under 420 nm wavelength photoirradiation. In addition, the p-type CdS was formed with a doping of 4 at.%~10 at.% Cu after 450°C 2 h annealed in vacuum.

Photoelectrochemical Properties of Size-Quantized CdS Thin Films Prepared by an Electrochemical Method

Langmuir ◽  
1998 ◽  
Vol 14 (25) ◽  
pp. 7077-7081 ◽  
Author(s):  
Tsukasa Torimoto ◽  
Shuhei Nagakubo ◽  
Matsuhiko Nishizawa ◽  
Hiroshi Yoneyama
Keyword(s):  
Thin Films ◽  
Electrochemical Method ◽  
Photoelectrochemical Properties ◽  
Cds Thin Films
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