Effects of annealing temperature on the physicochemical, optical and photoelectrochemical properties of nanostructured hematite thin films prepared via electrodeposition method

The main aim of this study was to investigate size-dependent effect on the photoelectrochemical properties of nanostructured tungsten trioxide (WO3) thin films synthesized via electrochemical method. Firstly, the nanostructured WO3 thin films of different crystalline sizes were synthesized on fluorine-doped tin oxide (FTO) glass working electrodes followed by controlled annealing treatment at temperature of 100-600°C. The resultant nanostructured WO3 thin films were further characterized using field emission-scanning electron microscopy (FE-SEM) and photocurrent density measurements. Through FE-SEM analysis, it was found that the WO3 crystalline size increases with increasing annealing temperature that resulted in elevated photocurrent per unit area of the synthesized nanostructured WO3 thin films. Finally, it was observed that the highest photocurrent density of up to 35μA/cm2 was attained for WO3 crystallines size of 86nm that formed at the annealing temperature of 600°C.

Download Full-text

Structural, morphological, optical and photoelectrochemical properties of ZnFe2O4 thin films grown via an electrodeposition method

Inorganic Chemistry Communications ◽

10.1016/j.inoche.2021.108809 ◽

2021 ◽

pp. 108809

Author(s):

Mohamad Mohsen Momeni ◽

Mohammad Najafi

Keyword(s):

Thin Films ◽

Photoelectrochemical Properties ◽

Electrodeposition Method

Download Full-text

Effect of Deposition Time on the Photoelectrochemical Properties of Cupric Oxide Thin Films Synthesized via Electrodeposition Method

MATEC Web of Conferences ◽

10.1051/matecconf/20166001001 ◽

2016 ◽

Vol 60 ◽

pp. 01001 ◽

Cited By ~ 2

Author(s):

Chong Siang Yaw ◽

Ai Kah Soh ◽

Meng Nan Chong

Keyword(s):

Thin Films ◽

Deposition Time ◽

Cupric Oxide ◽

Photoelectrochemical Properties ◽

Oxide Thin Films ◽

Electrodeposition Method

Download Full-text

Transmission Electron Microscopy studies of the vacancy ordering in YSI2-X thin films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100087124 ◽

1991 ◽

Vol 49 ◽

pp. 562-563

Author(s):

F.-R. Chen ◽

T. L. Lee ◽

L. J. Chen

Keyword(s):

Crystal Structure ◽

Electron Microscopy ◽

Thin Films ◽

Diffraction Pattern ◽

Annealing Temperature ◽

Lattice Mismatch ◽

Si Substrate ◽

Metal Thin Films ◽

Transmission Electron ◽

Vacancy Ordering

YSi2-x thin films were grown by depositing the yttrium metal thin films on (111)Si substrate followed by a rapid thermal annealing (RTA) at 450 to 1100°C. The x value of the YSi2-x films ranges from 0 to 0.3. The (0001) plane of the YSi2-x films have an ideal zero lattice mismatch relative to (111)Si surface lattice. The YSi2 has the hexagonal AlB2 crystal structure. The orientation relationship with Si was determined from the diffraction pattern shown in figure 1(a) to be and . The diffraction pattern in figure 1(a) was taken from a specimen annealed at 500°C for 15 second. As the annealing temperature was increased to 600°C, superlattice diffraction spots appear at position as seen in figure 1(b) which may be due to vacancy ordering in the YSi2-x films. The ordered vacancies in YSi2-x form a mesh in Si plane suggested by a LEED experiment.

Download Full-text

Electrical and Optical Properties Dependence on Annealing Temperature for CdS Thin Films

Indian Journal Of Applied Research ◽

10.15373/2249555x/may2013/176 ◽

2011 ◽

Vol 3 (5) ◽

pp. 544-548 ◽

Cited By ~ 2

Author(s):

F. Y. Al-Shaikley F. Y. Al-Shaikley ◽

Keyword(s):

Thin Films ◽

Optical Properties ◽

Annealing Temperature ◽

Electrical And Optical Properties ◽

Cds Thin Films

Download Full-text

Effect of Annealing temperature on the Structural and Magnetic Properties of TbxY3-xFe5O12(x = 0.0, 1.0, 2.0) Thin Films Prepared by Sol-Gel Process

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.501.236 ◽

2012 ◽

Vol 501 ◽

pp. 236-241 ◽

Cited By ~ 1

Author(s):

Ftema W. Aldbea ◽

Noor Bahyah Ibrahim ◽

Mustafa Hj. Abdullah ◽

Ramadan E. Shaiboub

Keyword(s):

Thin Films ◽

Magnetic Properties ◽

Room Temperature ◽

Annealing Temperature ◽

Sol Gel ◽

Vibrating Sample Magnetometer ◽

X Ray ◽

Garnet Phase ◽

Sol Gel Process ◽

Amorphous Structures

Thin films nanoparticles TbxY3-xFe5O12 (x=0.0, 1.0, 2.0) were prepared by the sol-gel process followed by annealing process at various annealing temperatures of 700° C, 800° C and 900° C in air for 2 h. The results obtained from X-ray diffractometer (XRD) show that the films annealed below 900°C exhibit peaks of garnet mixed with small amounts of YFeO3 and Fe2O3. Pure garnet phase has been detected in the films annealed at 900°C. Before annealing the films show amorphous structures. The particles sizes measurement using the field emission scanning electron microscope (FE-SEM) showed that the particles sizes increased as the annealing temperature increased. The magnetic properties were measured at room temperature using the vibrating sample magnetometer (VSM). The saturation magnetization (Ms) of the films also increased with the annealing temperature. However, different behavior of coercivity (Hc) has been observed as the annealing temperature was increased.

Download Full-text