Nonlinear analysis, design and radiation study of a single-beam CORPS-like active antenna array feed network integrated with single power amplifier, using a frequency-dependent behavioral model

2014 ◽  
Vol 81 (3) ◽  
pp. 703-722 ◽  
Author(s):  
Reza Zaker ◽  
Abdolali Abdipour ◽  
Ahad Tavakoli ◽  
Rashid Mirzavand
Author(s):  
Bilal Aghoutane ◽  
Sudipta Das ◽  
Hanan EL Faylali ◽  
B.T.P. Madhav ◽  
Mohammed EL Ghzaoui ◽  
...  

A new compact [Formula: see text] microstrip patch antenna array design for future 5G applications is presented in this paper. The proposed antenna array consists of square slot loaded with four radiating patch elements. The corporate feed network has been implemented for the excitation of the array. The feed line is connected to the square slot patch through a quarter-wave transformer matching network. The proposed array is designed on an FR-4 substrate with a dielectric constant of 4.4, thickness of 1.6[Formula: see text]mm and loss tangent (tan[Formula: see text] of 0.02. It has a compact dimension of 9.590[Formula: see text] 17.802[Formula: see text]. The proposed structure has been designed and simulated by using commercially available HFSS software. The simulated results (reflection coefficient, gain, efficiency, radiation pattern) are verified through the measurement process to confirm the validity of the design concept. The measurement results are in good agreement with the simulated results. The proposed structure resonates at 38.1[Formula: see text]GHz with a [Formula: see text]10[Formula: see text]dB impedance bandwidth of about 3700[Formula: see text]MHz (36.5[Formula: see text]GHz to 40.2[Formula: see text]GHz). The reflection coefficient at 38.1[Formula: see text]GHz is [Formula: see text]34[Formula: see text]dB, with a maximum gain of 7.81[Formula: see text]dB. The proposed square slot loaded patch antenna array is very promising for 5G communications at 38[Formula: see text]GHz band (37–40[Formula: see text]GHz).


Author(s):  
Rose Emergo ◽  
Steve Brockett ◽  
Pat Hamilton

Abstract A single power amplifier-duplexer device was submitted by a customer for analysis. The device was initially considered passing when tested against the production test. However, further electrical testing suggested that the device was stuck in a single power mode for a particular frequency band at cold temperatures only. This paper outlines the systematic isolation of a parasitic Schottky diode formed by a base contactcollector punch through process defect that pulled down the input of a NOR gate leading to the incorrect logic state. Note that this parasitic Schottky diode is parallel to the basecollector junction. It was observed that the logic failure only manifested at colder temperatures because the base contact only slightly diffused into the collector layer. Since the difference in the turn-on voltages between the base-collector junction and the parasitic Schottky diode increases with decreasing temperature, the effect of the parasitic diode is only noticeable at lower temperatures.


Author(s):  
Zhao Yang ◽  
Wenxian Zheng ◽  
Daniele Inserra ◽  
Jian Li ◽  
Yongjun Huang ◽  
...  

2008 ◽  
Vol 5 ◽  
pp. 153-160 ◽  
Author(s):  
Guang Yang ◽  
Rong-Hong Jin ◽  
Jun-Ping Geng ◽  
Sheng Ye

2000 ◽  
Vol 48 (10) ◽  
pp. 1628-1634 ◽  
Author(s):  
M. Belaid ◽  
J.-J. Laurin ◽  
Ke Wu
Keyword(s):  

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