A 5–7 GHz current reuse and gm-boosted common gate low noise amplifier with LC based ESD protection in 32 nm CMOS

2016 ◽  
Vol 90 (3) ◽  
pp. 573-589 ◽  
Author(s):  
Sriharsha Ankathi ◽  
Sriramula Vignan ◽  
Srikanth Athukuri ◽  
Smrithi Mohan ◽  
Karthigha Balamurugan ◽  
...  
Keyword(s):  
Low Noise ◽  
Low Noise Amplifier ◽  
Current Reuse ◽  
Esd Protection ◽  
Common Gate ◽  
Noise Amplifier

scholarly journals Analysis and design of common-gate low-noise amplifier for wideband applications

2009 ◽  
Vol 37 (2) ◽  
pp. 257-281 ◽  
Author(s):  
Jouni Kaukovuori ◽  
Mikko Kaltiokallio ◽  
Jussi Ryynänen
Keyword(s):  
Low Noise ◽  
Low Noise Amplifier ◽  
Analysis And Design ◽  
Common Gate ◽  
Noise Amplifier

scholarly journals A 2.4 GHz low noise amplifier design at 130nm CMOS technology using common gate topology for WiFi / WiMAX application

2017 ◽  
Vol 7 (1.3) ◽  
pp. 69
Author(s):  
M. Ramana Reddy ◽  
N.S Murthy Sharma ◽  
P. Chandra Sekhar
Keyword(s):  
Noise Figure ◽  
Cmos Technology ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Low Power Consumption ◽  
Common Gate ◽  
Chip Size ◽  
Overall Performance ◽  
Amplifier Design ◽  
Noise Amplifier

The proposed work shows an innovative designing in TSMC 130nm CMOS technology. A 2.4 GHz common gate topology low noise amplifier (LNA) using an active inductor to attain the low power consumption and to get the small chip size in layout design. By using this Common gate topology achieves the noise figure of 4dB, Forward gain (S21) parameter of 14.7dB, and the small chip size of 0.26 mm, while 0.8mW power consuming from a 1.1V in 130nm CMOS gives the better noise figure and improved the overall performance.

An ultra-low power K-band low-noise amplifier co-designed with ESD protection in 40-nm CMOS

2011 ◽  
Author(s):  
Ming-Hsien Tsai ◽  
Shawn S. H. Hsu ◽  
Fu-Lung Hsueh ◽  
Chewn-Pu Jou ◽  
Tzu-Jin Yeh ◽  
...  
Keyword(s):  
Low Power ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Ultra Low Power ◽  
Esd Protection ◽  
Noise Amplifier ◽  
K Band

scholarly journals A Novel Reconfigurable MB-OFDM UWB LNA Using Programmable Current Reuse

2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
Ahmed Ragheb ◽  
Ghazal Fahmy ◽  
Iman Ashour ◽  
Abdel Hady Ammar
Keyword(s):  
Orthogonal Frequency Division Multiplexing ◽  
Cmos Technology ◽  
Low Noise ◽  
Ultra Wideband ◽  
Current Reuse ◽  
Input Matching ◽  
Common Gate ◽  
Programmable Circuit ◽  
Noise Amplifier ◽  
Mode 3

This paper presents a design of a reconfigurable low noise amplifier (LNA) for multiband orthogonal frequency division multiplexing (MB-OFDM) ultra wideband (UWB) receivers. The proposed design is divided into three stages; the first one is a common gate (CG) topology to provide the input matching over a wideband. The second stage is a programmable circuit to control the mode of operation. The third stage is a current reuse topology to improve the gain, flatness and consume lower power. The proposed LNA is designed using 0.18 μm CMOS technology. This LNA has been designed to operate in two subbands of MB-OFDM UWB, UWB mode-1 and mode-3, as a single or concurrent mode. The simulation results exhibit the power gain up to 17.35, 18, and 11 dB for mode-1, mode-3, and concurrent mode, respectively. The NF is 3.5, 3.9, and 6.5 and the input return loss is better than −12, −13.57, and −11 dB over mode-1, mode-3, and concurrent mode, respectively. This design consumes 4 mW supplied from 1.2 V.

A CMOS variable gain low-noise amplifier with ESD protection for 5 GHz applications

2010 ◽  
Vol 31 (5) ◽  
pp. 055005
Author(s):  
Zhang Hao ◽  
Li Zhiqun ◽  
Wang Zhigong ◽  
Zhang Li ◽  
Li Wei
Keyword(s):  
Low Noise ◽  
Low Noise Amplifier ◽  
Variable Gain ◽  
Esd Protection ◽  
Noise Amplifier ◽  
5 Ghz

A 2.4/5.2/5.8 GHz Triple-Band Common-Gate Cascode CMOS Low-Noise Amplifier

2016 ◽  
Vol 36 (9) ◽  
pp. 3477-3490 ◽  
Author(s):  
Chun-Chieh Chen ◽  
Yen-Chun Wang
Keyword(s):  
Low Noise ◽  
Low Noise Amplifier ◽  
Common Gate ◽  
Noise Amplifier ◽  
Triple Band
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