A 40 nm 16 Gb/s differential transmitter with far-end crosstalk cancellation using injection timing control for high-density flexible flat cables

2020 ◽  
Vol 105 (2) ◽  
pp. 191-202
Author(s):  
Daigo Takahashi ◽  
Yusuke Fujita ◽  
Satoshi Miura ◽  
Tetsuya Iizuka
Keyword(s):  
High Density ◽  
Injection Timing ◽  
Timing Control ◽  
Crosstalk Cancellation

A 20 GHz subharmonic injection-locked clock multiplier with mixer-based injection timing control in 65 nm CMOS technology

2018 ◽  
Vol 99 (1) ◽  
pp. 147-157
Author(s):  
Fangxu Lv ◽  
Xuqiang Zheng ◽  
Jianye Wang ◽  
Guoli Zhang ◽  
Ziqiang Wang ◽  
...  
Keyword(s):  
Cmos Technology ◽  
Injection Timing ◽  
Timing Control

A Model-Based Injection-Timing Strategy for Combustion-Timing Control

2015 ◽  
Vol 8 (3) ◽  
pp. 1012-1020 ◽  
Author(s):  
Gabriel Ingesson ◽  
Lianhao Yin ◽  
Rolf Johansson ◽  
Per Tunestal
Keyword(s):  
Injection Timing ◽  
Timing Control ◽  
Model Based

Electronic crosstalk cancellation in high density WDM systems using linear cancellation

1996 ◽  
Vol 32 (12) ◽  
pp. 1119 ◽  
Author(s):  
Keang-Po Ho ◽  
Chinlon Lin
Keyword(s):  
High Density ◽  
Crosstalk Cancellation

Ion Sensing for Off-Highway Diesel Engines to Meet Future Emissions Regulations

2006 ◽  
Author(s):  
Jessica Adair ◽  
Matthew Viele ◽  
Ed Van Dyne
Keyword(s):  
Closed Loop ◽  
Fuel Injection ◽  
Injection Timing ◽  
Closed Loop Control ◽  
Timing Control ◽  
Loop Control ◽  
Ion Sensing ◽  
Fuel Injection Timing ◽  
Injection Technology ◽  
Start Of Combustion

Emissions regulations for off-highway engines are tightening towards those of on-highway engines. Present designs will not be able to meet these more stringent regulations because of their use of mechanical fuel injection timing control; more advanced timing control will be required. Ion sensing combined with variable fuel injection timing may help these engines meet the emissions requirements without the drastic price increase that usually accompanies a switch to advanced fuel injection technology. Ion sensing can detect the start of combustion and this signal can be used for closed loop control for the injection timing. The integrity of the ion signal is highly dependent on combustion chamber geometry, sensor placement, and even the polarity of the charge across the sensor. Optimizing all of these effects could improve the detection of the start of combustion from an ion sensor to less than one crank angle degree and provide a signal for closed loop control of the injection timing.

scholarly journals Ignition Timing and Fuel Injection Timing Control using Arduino and Control Drivers

2020 ◽  
Vol 993 ◽  
pp. 012019
Author(s):  
N Shivakumar ◽  
G Antony Casmir Jayaseelan ◽  
Parthiban ◽  
Ahmed ◽  
Akshay
Keyword(s):  
Fuel Injection ◽  
Injection Timing ◽  
Ignition Timing ◽  
Timing Control ◽  
Fuel Injection Timing ◽  
And Control

2 GHz sub‐harmonically injection‐locked PLL with mixer‐based injection timing control in 0.18 µm CMOS technology

2014 ◽  
Vol 50 (12) ◽  
pp. 855-857 ◽  
Author(s):  
Ke Huang ◽  
Ziqiang Wang ◽  
Xuqiang Zheng ◽  
Chun Zhang ◽  
Zhihua Wang
Keyword(s):  
Cmos Technology ◽  
Injection Timing ◽  
Timing Control

scholarly journals Optimal selection of injection doses and injection timings for insulin therapy in a limited time

2020 ◽  
Vol 2020 (1) ◽  
Author(s):  
Shouzong Liu ◽  
Ling Yu ◽  
Mingzhan Huang ◽  
Xiangyun Shi
Keyword(s):  
Impulsive Control ◽  
Injection Timing ◽  
Limited Time ◽  
Timing Control ◽  
Mixed Control ◽  
Injection Dose ◽  
Control Objective ◽  
Optimal Injection ◽  
Dose Control ◽  
Injection Strategies

AbstractIn this paper, we study the injection strategies of insulin for the impulsive therapy of diabetes in a limited time. According to whether we consider the risk of hypoglycemia or not, we develop two different control objectives and investigate three different injection strategies for each control objective. We apply a time-rescaling method to overcome technical obstacles in optimal impulsive control and compute the gradient formulas of cost functions with respect to injection doses and injection timings. By means of numerical simulations we get the optimal injection doses and injection timings for each injection strategy. Our study indicates that for the control objective without considering the risk of hypoglycemia, the optimal injection timing control is more effective than the optimal injection dose control, whereas the mixed control achieves almost the same effect as the optimal injection timing control. For the other control objective considering the risk of hypoglycemia, the optimal injection timing control performs better than the optimal injection dose control in avoiding emergence of hypoglycemia, and the mixed control provides the best strategy in preventing hyperglycemia from occurrence.

Planar defects in ordered (Ga,In)P

1988 ◽  
Vol 46 ◽  
pp. 902-903
Author(s):  
S. McKernan ◽  
C. B. Carter ◽  
D. Bour ◽  
J. R. Shealy
Keyword(s):  
Electron Diffraction ◽  
Vapor Phase ◽  
Growth Direction ◽  
High Density ◽  
Ordered Structure ◽  
Planar Defects ◽  
Diffraction Patterns ◽  
Ternary Semiconductors ◽  
Anion Species ◽  
Metallic Vapor

The growth of ternary III-V semiconductors by organo-metallic vapor phase epitaxy (OMVPE) is widely practiced. It has been generally assumed that the resulting structure is the same as that of the corresponding binary semiconductors, but with the two different cation or anion species randomly distributed on their appropriate sublattice sites. Recently several different ternary semiconductors including AlxGa1-xAs, Gaxln-1-xAs and Gaxln1-xP1-6 have been observed in ordered states. A common feature of these ordered compounds is that they contain a relatively high density of defects. This is evident in electron diffraction patterns from these materials where streaks, which are typically parallel to the growth direction, are associated with the extra reflections arising from the ordering. However, where the (Ga,ln)P epilayer is reasonably well ordered the streaking is extremely faint, and the intensity of the ordered spot at 1/2(111) is much greater than that at 1/2(111). In these cases it is possible to image relatively clearly many of the defects found in the ordered structure.

Quantitative defect studies in semiconductor TEM samples prepared by low angle ion milling

1995 ◽  
Vol 53 ◽  
pp. 512-513
Author(s):  
L. Mulestagno ◽  
J.C. Holzer ◽  
P. Fraundorf
Keyword(s):  
Sample Preparation ◽  
Milling Time ◽  
High Density ◽  
Low Density ◽  
Ion Milling ◽  
High Quality ◽  
Variable Angle ◽  
Major Disadvantage ◽  
Induced Defects

Due to the wealth of information, both analytical and structural that can be obtained from it TEM always has been a favorite tool for the analysis of process-induced defects in semiconductor wafers. The only major disadvantage has always been, that the volume under study in the TEM is relatively small, making it difficult to locate low density defects, and sample preparation is a somewhat lengthy procedure. This problem has been somewhat alleviated by the availability of efficient low angle milling.Using a PIPS® variable angle ion -mill, manufactured by Gatan, we have been consistently obtaining planar specimens with a high quality thin area in excess of 5 × 104 μm2 in about half an hour (milling time), which has made it possible to locate defects at lower densities, or, for defects of relatively high density, obtain information which is statistically more significant (table 1).

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