Effect of lignin on the thermal stability of cellulose nanofibrils produced from bagasse pulp

Cellulose ◽  
2019 ◽  
Vol 26 (13-14) ◽  
pp. 7823-7835 ◽  
Author(s):  
Ni Zhang ◽  
Peng Tao ◽  
Yanxv Lu ◽  
Shuangxi Nie
Molecules ◽  
2021 ◽  
Vol 26 (8) ◽  
pp. 2254
Author(s):  
Adeleke A. Oyekanmi ◽  
N. I. Saharudin ◽  
Che Mohamad Hazwan ◽  
Abdul Khalil H. P. S. ◽  
Niyi G. Olaiya ◽  
...  

Hydrophilic behaviour of carrageenan macroalgae biopolymer, due to hydroxyl groups, has limited its applications, especially for packaging. In this study, macroalgae were reinforced with cellulose nanofibrils (CNFs) isolated from kenaf bast fibres. The macroalgae CNF film was after that treated with silane for hydrophobicity enhancement. The wettability and functional properties of unmodified macroalgae CNF films were compared with silane-modified macroalgae CNF films. Characterisation of the unmodified and modified biopolymers films was investigated. The atomic force microscope (AFM), SEM morphology, tensile properties, water contact angle, and thermal behaviour of the biofilms showed that the incorporation of Kenaf bast CNF remarkably increased the strength, moisture resistance, and thermal stability of the macroalgae biopolymer films. Moreover, the films’ modification using a silane coupling agent further enhanced the strength and thermal stability of the films apart from improved water-resistance of the biopolymer films compared to unmodified films. The morphology and AFM showed good interfacial interaction of the components of the biopolymer films. The modified biopolymer films exhibited significantly improved hydrophobic properties compared to the unmodified films due to the enhanced dispersion resulting from the silane treatment. The improved biopolymer films can potentially be utilised as packaging materials.


2019 ◽  
Vol 211 ◽  
pp. 257-265 ◽  
Author(s):  
Xiongli Liu ◽  
Yangbing Wen ◽  
Jialei Qu ◽  
Xin Geng ◽  
Bin Chen ◽  
...  

Cellulose ◽  
2019 ◽  
Vol 26 (13-14) ◽  
pp. 7717-7725 ◽  
Author(s):  
Peng Tao ◽  
Zhengmei Wu ◽  
Chuyue Xing ◽  
Qi Zhang ◽  
Zuyun Wei ◽  
...  

2018 ◽  
Vol 181 ◽  
pp. 506-513 ◽  
Author(s):  
Hansol Lee ◽  
Jaya Sundaram ◽  
Lu Zhu ◽  
Yiping Zhao ◽  
Sudhagar Mani

Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization


Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.


1991 ◽  
Vol 1 (12) ◽  
pp. 1823-1836 ◽  
Author(s):  
M. Bessière ◽  
A. Quivy ◽  
S. Lefebvre ◽  
J. Devaud-Rzepski ◽  
Y. Calvayrac

1994 ◽  
Vol 4 (4) ◽  
pp. 653-657
Author(s):  
B. Bonzi ◽  
M. El Khomssi ◽  
H. Lanchon-Ducauquis

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