Efficient ab initio analysis of quantum confinement and band structure effects in ultra-scaled Si1−xGex gate-all-around and fin field-effect transistors for sub-10 nm technology nodes

2018 ◽  
Vol 17 (4) ◽  
pp. 1399-1409
Author(s):  
Jie Liu ◽  
Chuanxiang Tang ◽  
Pinghui Mo ◽  
Jiwu Lu
Keyword(s):  
Band Structure ◽  
Ab Initio ◽  
Quantum Confinement ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Technology Nodes

Quantum confinement modulation on the performance of nanometer thin body GaSb/InAs tunnel field-effect transistors

2017 ◽  
Vol 121 (22) ◽  
pp. 224503 ◽  
Author(s):  
Zhi Wang ◽  
Liwei Wang ◽  
Yunfei En ◽  
Xiang-Wei Jiang
Keyword(s):  
Quantum Confinement ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Thin Body

Current Status of Graphene Transistors

2009 ◽  
Vol 156-158 ◽  
pp. 499-509 ◽  
Author(s):  
M.C. Lemme
Keyword(s):  
Band Gap ◽  
Quantum Confinement ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Graphene Nanoribbons ◽  
Cmos Technology ◽  
Current Status ◽  
Energy Band Gap ◽  
Layer Graphene ◽  
Silicon Cmos

This paper reviews the current status of graphene transistors as potential supplement to silicon CMOS technology. A short overview of graphene manufacturing and metrology methods is followed by an introduction of macroscopic graphene field effect transistors (FETs). The absence of an energy band gap is shown to result in severe shortcomings for logic applications. Possibilities to engineer a band gap in graphene FETs including quantum confinement in graphene Nanoribbons (GNRs) and electrically or substrate induced asymmetry in double and multi layer graphene are discussed. Novel switching mechanisms in graphene transistors are briefly introduced that could lead to future memory devices. Finally, graphene FETs are shown to be of interest for analog radio frequency applications.

A review of quantum transport in field-effect transistors

2021 ◽  
Author(s):  
David K Ferry ◽  
Josef Weinbub ◽  
Mihail Nedjalkov ◽  
Siegfried Selberherr
Keyword(s):  
Quantum Mechanics ◽  
Quantum Transport ◽  
Quantum Confinement ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Quantum Effects ◽  
The Past ◽  
Effect Transistor

Abstract Confinement in small structures has required quantum mechanics, which has been known for a great many years. This leads to quantum transport. The field-effect transistor has had no need to be described by quantum transport over most of the century for which it has existed. But, this has changed in the past few decades, as modern versions tend to be absolutely controlled by quantum confinement and the resulting modifications to the normal classical descriptions. In addition, correlation and confinement lead to a need for describing the transport by quantum methods as well. In this review, we describe the quantum effects and the method of treating by various approaches to quantum transport.

Effects of Electrode Layer Band Structure on the Performance of Multilayer Graphene–hBN–Graphene Interlayer Tunnel Field Effect Transistors

Nano Letters ◽  
2016 ◽  
Vol 16 (8) ◽  
pp. 4975-4981 ◽  
Author(s):  
Sangwoo Kang ◽  
Nitin Prasad ◽  
Hema C. P. Movva ◽  
Amritesh Rai ◽  
Kyounghwan Kim ◽  
...  
Keyword(s):  
Band Structure ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Multilayer Graphene ◽  
Electrode Layer

scholarly journals Impact of field-induced quantum confinement on the onset of tunneling field-effect transistors: Experimental verification

2014 ◽  
Vol 105 (20) ◽  
pp. 203507 ◽  
Author(s):  
Quentin Smets ◽  
Anne S. Verhulst ◽  
Koen Martens ◽  
Han Chung Lin ◽  
Salim El Kazzi ◽  
...  
Keyword(s):  
Experimental Verification ◽  
Quantum Confinement ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Tunneling Field Effect Transistors
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