Electrically stable low voltage operating ZnO thin film transistors with low leakage current Ni-doped Ba0.6Sr0.4TiO3 gate insulator
2008 ◽
Vol 23
(1)
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pp. 76-79
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2000 ◽
Vol 18
(2)
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pp. 685-687
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2010 ◽
Vol 10
(5)
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pp. 1306-1308
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1987 ◽
Vol 8
(9)
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pp. 425-427
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