Low-voltage ZnO thin-film transistors with high-KBi1.5Zn1.0Nb1.5O7 gate insulator for transparent and flexible electronics

2005 ◽  
Vol 87 (4) ◽  
pp. 043509 ◽  
Author(s):  
Il-Doo Kim ◽  
YongWoo Choi ◽  
Harry L. Tuller
Keyword(s):  
Thin Film ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Gate Insulator ◽  
Zno Thin Film

Low voltage ZnO thin-film transistors with Ti-substituted BZN gate insulator for flexible electronics

2010 ◽  
Vol 518 (22) ◽  
pp. 6277-6279 ◽  
Author(s):  
Kwang-Hwan Cho ◽  
Min-Gyu Kang ◽  
Seung-Min Oh ◽  
Chong-Yun Kang ◽  
YoungPak Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Gate Insulator ◽  
Zno Thin Film

Low-voltage-drive and high output current ZnO thin-film transistors with sputtering SiO2 as gate insulator

2010 ◽  
Vol 10 (5) ◽  
pp. 1306-1308 ◽  
Author(s):  
L. Zhang ◽  
J. Li ◽  
X.W. Zhang ◽  
D.B. Yu ◽  
H.P. Lin Khizar-ul-Haq ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Gate Insulator ◽  
Zno Thin Film ◽  
Output Current ◽  
High Output

Low leakage current—stacked MgO∕Bi1.5Zn1.0Nb1.5O7 gate insulator— for low voltage ZnO thin film transistors

2006 ◽  
Vol 89 (20) ◽  
pp. 202908 ◽  
Author(s):  
Mi-Hwa Lim ◽  
KyongTae Kang ◽  
Ho-Gi Kim ◽  
Il-Doo Kim ◽  
YongWoo Choi ◽  
...  
Keyword(s):  
Thin Film ◽  
Leakage Current ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Gate Insulator ◽  
Zno Thin Film ◽  
Low Leakage ◽  
Low Leakage Current

Surface grafting of octylamine onto poly(ethylene-alt-maleic anhydride) gate insulators for low-voltage DNTT thin-film transistors

2016 ◽  
Vol 18 (12) ◽  
pp. 8522-8528 ◽  
Author(s):  
Yun-Seo Choe ◽  
Mi Hye Yi ◽  
Ji-Heung Kim ◽  
Yun Ho Kim ◽  
Kwang-Suk Jang
Keyword(s):  
Thin Film ◽  
Maleic Anhydride ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Gate Insulator ◽  
Surface Grafting ◽  
Gate Insulators ◽  
Poly Ethylene

We report the surface grafting of octylamine onto a poly(ethylene-alt-maleic anhydride) (PEMA) gate insulator for enhancing the performance of dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) thin-film transistors.

Effect of Surface Treatment of Gate-Insulator on Uniformity of Bottom-Gate ZnO Thin Film Transistors

2010 ◽  
Vol 13 (4) ◽  
pp. H101 ◽  
Author(s):  
Mamoru Furuta ◽  
Takashi Nakanishi ◽  
Mutsumi Kimura ◽  
Takahiro Hiramatsu ◽  
Tokiyoshi Matsuda ◽  
...  
Keyword(s):  
Thin Film ◽  
Surface Treatment ◽  
Thin Film Transistors ◽  
Gate Insulator ◽  
Zno Thin Film ◽  
Bottom Gate ◽  
Effect Of Surface

Effect of Double-Layered Al[sub 2]O[sub 3] Gate Insulator on the Bias Stability of ZnO Thin Film Transistors

2010 ◽  
Vol 13 (8) ◽  
pp. H264 ◽  
Author(s):  
Sung-Min Yoon ◽  
Sang-Hee Ko Park ◽  
Shin-Hyuk Yang ◽  
Chun-Won Byun ◽  
Chi-Sun Hwang
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Insulator ◽  
Zno Thin Film ◽  
Bias Stability
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