scholarly journals Vertical Organic Thin‐Film Transistors with an Anodized Permeable Base for Very Low Leakage Current

2019 ◽  
Vol 31 (19) ◽  
pp. 1900917 ◽  
Author(s):  
Felix Dollinger ◽  
Kyung‐Geun Lim ◽  
Yang Li ◽  
Erjuan Guo ◽  
Peter Formánek ◽  
...  
Keyword(s):  
Thin Film ◽  
Leakage Current ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Low Leakage ◽  
Low Leakage Current

Organic-inorganic hybrid dielectrics with low leakage current for organic thin-film transistors

2006 ◽  
Vol 89 (9) ◽  
pp. 092101 ◽  
Author(s):  
Sunho Jeong ◽  
Dongjo Kim ◽  
Sul Lee ◽  
Bong-Kyun Park ◽  
Jooho Moon
Keyword(s):  
Thin Film ◽  
Leakage Current ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Inorganic Hybrid ◽  
Low Leakage ◽  
Low Leakage Current

Low leakage current gate dielectrics prepared by ion beam assisted deposition for organic thin film transistors

2007 ◽  
Vol 102 (12) ◽  
pp. 126101 ◽  
Author(s):  
Chang Su Kim ◽  
Sung Jin Jo ◽  
Jong Bok Kim ◽  
Seung Yoon Ryu ◽  
Joo Hyon Noh ◽  
...  
Keyword(s):  
Thin Film ◽  
Leakage Current ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
Ion Beam ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Low Leakage ◽  
Ion Beam Assisted Deposition ◽  
Low Leakage Current

scholarly journals Tetracene Based OTFT with Nd2O3-dielectric Layer

2010 ◽  
Vol 2 (2) ◽  
pp. 214-220 ◽  
Author(s):  
D. Saikia ◽  
R. Sarma ◽  
P. Saikia ◽  
P. K. Saikia
Keyword(s):  
Thin Film ◽  
Rare Earth ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Hole Concentration ◽  
Rare Earth Oxide ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Low Leakage ◽  
Low Leakage Current

Tetracene thin film transistors with rare earth oxide (Nd2O3) as gate dielectric is reported in this work. Rare earth oxide with high dielectric constant and low leakage current improve the performance of the organic thin film transistors (OTFTs). The fabricated tetracene OTFTs have shown good output characteristics with mobility 0.93x10-4 cm2/V.s, ON-OFF ratio 3.3x102, sub-threshold swing 0.06 V/decade and hole concentration 8.74x1017 cm-3. Keywords: Organic thin film transistors; Tetracene; Rare earth oxide; Trap density. © 2010 JSR Publications. ISSN: 2070-0237 (Print); 2070-0245 (Online). All rights reserved. DOI: 10.3329/jsr.v2i2.4094               J. Sci. Res. 2 (2), 214-220 (2010) 

Universal solution-processed high-k amorphous oxide dielectrics for high-performance organic thin film transistors

RSC Advances ◽  
2014 ◽  
Vol 4 (29) ◽  
pp. 14890-14895 ◽  
Author(s):  
Xurong Zhao ◽  
Sumei Wang ◽  
Aiju Li ◽  
Jun Ouyang ◽  
Guodong Xia ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Organic Thin Film Transistors ◽  
Dielectric Films ◽  
Operating Voltage ◽  
Polymer Modification ◽  
Organic Thin Film ◽  
Solution Processed ◽  
Low Leakage

Solution-processed high-k ZrTiOx dielectric films achieve a k value and capacitance of 53 and 467 nF cm−2, and a low leakage current of 4 × 10−8 A cm−2 with polymer modification. High-performance organic thin film transistors with a carrier mobility of 0.58 cm2 V−1 s−1, and a low operating voltage of 6 V were realized with ZrTiOx dielectric films.

Synthesis and Film Formation of Neodymium Oxides Nanorods: Electrical Properties Study

2014 ◽  
Vol 925 ◽  
pp. 406-410 ◽  
Author(s):  
Ammar M. Hamza ◽  
M. Shamshi Hassan ◽  
Ahmed N. Awad
Keyword(s):  
Electron Microscopy ◽  
Thin Film Transistors ◽  
Film Formation ◽  
Hexagonal Phase ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
X Ray ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Transmission Electron

Neodymium Oxides (Nd2O3) nanorods could be obtained via calcining the corresponding lanthanide nitrite counterparts without any impurities highly crystalline at 600 Cofor 2 hr. The products were characterized by X-ray powder diffraction (XRD), Scanning electron microscopy (SEM), and transmission electron microscopy (TEM). The results showed that the Nd2O3nanorods with hexagonal phase have different diameter and length. The I-V characteristic of the Ag/(Nd2O3) film is shown very low leakage current due to crystallinity and hence suitable for organic thin film transistors.

Low Leakage Current Vertical Thin-Film Transistors With InSnO-Stabilized ZnO Channel

2020 ◽  
Vol 41 (2) ◽  
pp. 248-251
Author(s):  
Xuemei Yin ◽  
Sunbin Deng ◽  
Guoyuan Li ◽  
Wei Zhong ◽  
Rongsheng Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Leakage Current ◽  
Thin Film Transistors ◽  
Low Leakage ◽  
Low Leakage Current
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