Low leakage current—stacked MgO∕Bi1.5Zn1.0Nb1.5O7 gate insulator— for low voltage ZnO thin film transistors

2006 ◽  
Vol 89 (20) ◽  
pp. 202908 ◽  
Author(s):  
Mi-Hwa Lim ◽  
KyongTae Kang ◽  
Ho-Gi Kim ◽  
Il-Doo Kim ◽  
YongWoo Choi ◽  
...  
2021 ◽  
Vol 21 (9) ◽  
pp. 4694-4699
Author(s):  
Byung-Yoon Park ◽  
Sungho Choi ◽  
Taek Ahn

The relationships between the microstructure and the dielectric properties of sol–gel prepared Y2O3 films with various Gd3+ doping were systematically investigated. Robust solution processed lanthanide films, (Y1−xGdx)2O3 (0 < x ≤ 0.5), are demonstrated as high-k gate insulators for low voltage-driven oxide thin film transistors and their optimized composition is presented. With the proper amount of Gd3+ doping, the corresponding thin film insulators exhibit low leakage current with increased dielectric constant. The resultant Zn–Sn–O/(Y, Gd)2O3 TFT exhibits enhanced performance, by a factor of 10.7 compared with TFTs using a SiO2 insulator, with a field-effect mobility of ~3.15 cm2V−1s−1 and an exceptionally low operating voltage <15 V.


2010 ◽  
Vol 10 (5) ◽  
pp. 1306-1308 ◽  
Author(s):  
L. Zhang ◽  
J. Li ◽  
X.W. Zhang ◽  
D.B. Yu ◽  
H.P. Lin Khizar-ul-Haq ◽  
...  

2020 ◽  
Vol 41 (2) ◽  
pp. 248-251
Author(s):  
Xuemei Yin ◽  
Sunbin Deng ◽  
Guoyuan Li ◽  
Wei Zhong ◽  
Rongsheng Chen ◽  
...  

2006 ◽  
Vol 89 (9) ◽  
pp. 092101 ◽  
Author(s):  
Sunho Jeong ◽  
Dongjo Kim ◽  
Sul Lee ◽  
Bong-Kyun Park ◽  
Jooho Moon

2019 ◽  
Vol 31 (19) ◽  
pp. 1900917 ◽  
Author(s):  
Felix Dollinger ◽  
Kyung‐Geun Lim ◽  
Yang Li ◽  
Erjuan Guo ◽  
Peter Formánek ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document