Reliability of Electrodeposited Copper and Ecrcvd Siof Films for Multilevel Metallization

1999 ◽  
Vol 565 ◽  
Author(s):  
Seoghyeong Lee ◽  
Yong-An Kim ◽  
Kyoung-Woo Lee ◽  
Seil Sohn ◽  
Young-Il Kim ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Multilayer Structure ◽  
Silicon Oxide ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Vacuum Furnace ◽  
Electrical Stability ◽  
Metal Interconnects ◽  
The Stability ◽  
Interconnect System

AbstractThe effect of a post plasma treatment on the dielectric properties and reliability of fluorine doped silicon oxide (SiOF) films deposited by electron cyclotron resonance chemical vapor deposition (ECRCVD) was studied. Also, the thermal stability of an electrodeposited Cu / sputtered Ta interconnect system with SiOF intermetal dielectrics was examined by annealing in a vacuum furnace. The stability of the dielectric constant of SiOF films was improved by O2 post plasma treatment. Surface modification by the plasma treatment was effective in prevention of water absorption. The Cu/Ta/SiOF/Si system was thermally stable at least up to 500°C for 3h. For the Cu/Ta/SiOF/Si multilayer structure, the plasma treatment seemed to play a big role in suppressing the interdiffusion between SiOF and metal interconnects. By C-V measurement, the electrical stability of the Cu/Ta/SiOF/Si multilayer structure was found to be stable up to 500°C for 2 h.

Reliability of Cu/WN thin Films Deposited on Low Dielectric Constant SiOF ILD

1998 ◽  
Vol 511 ◽  
Author(s):  
Seoghyeong Lee ◽  
Dong Joon Kim ◽  
Sung-Hoon Yang ◽  
Jeongwon Park ◽  
Seil Sohn ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Plasma Treatment ◽  
Silicon Oxide ◽  
Chemical Properties ◽  
Surface Oxidation ◽  
Relative Dielectric Constant ◽  
Low Dielectric ◽  
Sufficient Power ◽  
Metal Interconnects ◽  
Interconnect System

ABSTRACTThe effect of the post plasma treatment on the dielectric properties and reliability of fluorine doped silicon oxide (SiOF) films was studied. Also, the thermal stability of a Cu/WN interconnect system with SiOF intermetal dielectrics was examined by RTA. The surface roughness of SiOF films increased with the increasing plasma treatment power due to ion bombardment effect during the plasma treatment. As the plasma treatment power increased, the dielectric constant increased from 3.16 to 3.43, while the change in the relative dielectric constant of the plasma treated films by the boiling treatment was decreased in magnitude. Furthermore, the chemical properties of the plasma treated SiOF films near the top layer tend to resemble those of thermal oxides by the plasma treatment of sufficient power because of the reduction in the Si-F bonding in the films. In the case of Cu/WN/SiOF/Si multilayer structure, surface oxidation and densification due to the plasma treatment seemed to play an important role in protecting the interdiffusion between SiOF and metal interconnects.

The Nd-nanocluster Coupling Strength and its Effect in Excitation/de-excitation of Nd3+ Luminescence in Nd-doped Silicon-rich Silicon Oxide

2003 ◽  
Vol 770 ◽  
Author(s):  
Se-Young Seo ◽  
Jung H. Shin
Keyword(s):  
Coupling Strength ◽  
Cyclotron Resonance ◽  
Transfer Rate ◽  
Silicon Oxide ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Temperature Quenching ◽  
Doped Silicon ◽  
Back Transfer ◽  
Resonance Plasma

AbstractThe Nd-nanocluster Si (nc-Si) coupling strength and its effect in excitation/de-excitation of Nd3+ luminescence in Nd-doped silicon-rich silicon oxide (SRSO) is investigated. Nd-doped SRSO thin films, which consist of nc-Si embedded inside a SiO2 matrix, were prepared by electron-cyclotron-resonance plasma enhanced chemical vapor deposition (ECR-PECVD) of SiH4 and O2 with co-sputtering of Nd and subsequent anneal at 950 °C. Efficient Nd3+ luminescence with moderate temperature quenching is observed. Based on the temperature dependence of Nd3+ luminescence lifetime, a coupling strength between nc-Si and Nd that is strong enough to result in efficient excitation of Nd3+ via quantum confined excitons while weak enough to result in a small back-transfer rate is identified as the key to Nd3+ luminescence.

Waveguiding and 1.54 μm Er3+ Photoluminescence Properties of Erbium Doped Silicon Rich Silicon Oxide

1999 ◽  
Vol 597 ◽  
Author(s):  
Se-Young Seo ◽  
Hak-Seung Han ◽  
Jung H. Shin
Keyword(s):  
Silicon Oxide ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Erbium Doped ◽  
Doped Silicon ◽  
Excitation Mechanisms ◽  
Si Content ◽  
Er Doped ◽  
Resonance Plasma ◽  
Nanocrystalline Si

AbstractThe waveguiding and 1.54 μm Er3+ photoluminescent properties of Er doped silicon-rich silicon oxide (SRSO) are investigated. Erbium-doped SRSO films, which consist of nanocrystalline Si clusters embedded inside Si0 2 matrix, were deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition of SiH4 and O2 with concurrent sputtering of erbium. The excess Si content of the SRSO films ranged from 0 to 10 at. %, and Er content ranged from 0.01 to 0.3 at. %. After deposition, films were rapid thermal annealed at temperatures between 750 and 1150°C for durations ranging from 2 to 20 min. to precipitate silicon nanoclusters. All films show strong room temperature 1.54 μm Er3+ photoluminescence. The luminescence lifetimes that can be > 6 msec. The refractive indices of the SRSO films range from 1.48 to 2.47, increasing with increasing excess Si content. Thus, waveguides can be formed easily by depositing erbium doped SRSO films on 1 μm thick SiO2 films. Furthermore, carrier-induced de-excitation mechanisms of excited erbium atoms in SRSO are nearly completely suppressed in such SRSO films, indicating that population inversion of Er3+ ions by carrier-mediated excitation is possible.

The Impact of Deposition Parameters on the Optical and Compositional Properties of Er Doped SRSO Thin Films Deposited by ECR-PECVD

2005 ◽  
Vol 866 ◽  
Author(s):  
Michael Flynn ◽  
Jacek Wojcik ◽  
Subhash Gujrathi ◽  
Edward Irving ◽  
Peter Mascher
Keyword(s):  
Flow Rate ◽  
Silicon Oxide ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Oxygen Flow Rate ◽  
Optical Measurements ◽  
Oxygen Flow ◽  
Flow Rate Ratio ◽  
Elastic Recoil ◽  
The Impact

AbstractSilicon rich silicon oxide films were fabricated by electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-PECVD). The films were doped in situ using an organometallic precursor. Optical measurements show that the refractive indices of the films are determined by the silane to oxygen flow rate ratio used during the depositions. The erbium content as measured by elastic recoil detection (ERD) is also strongly dependent on the oxygen flow rate, with more erbium being incorporated in the more highly oxygenated films. The erbium content was also found to vary inversely with plasma power, which did not have a significant effect on the silicon to oxygen ratio. This allows the erbium and excess silicon levels of the films to be controlled independently.

Sign in / Sign up

Export Citation Format

Share Document