Changes in the optical properties of films of silicon nitride, silicon oxinitride, and silicon oxide upon ion irradiation

1977 ◽  
Vol 26 (1) ◽  
pp. 129-131
Author(s):  
N. N. Gerasimenko ◽  
T. I. Kovalevskaya ◽  
V. G. Pan'kin ◽  
K. K. Svitashev ◽  
G. M. Tseitlin
Keyword(s):  
Optical Properties ◽  
Silicon Nitride ◽  
Silicon Oxide ◽  
Ion Irradiation

Ion irradiation effects on optical properties of silicon nitride films

2007 ◽  
Vol 201 (19-20) ◽  
pp. 8322-8325 ◽  
Author(s):  
N. Matsunami ◽  
N. Shinde ◽  
M. Tazawa ◽  
S. Nakao ◽  
M. Sataka ◽  
...  
Keyword(s):  
Optical Properties ◽  
Silicon Nitride ◽  
Ion Irradiation ◽  
Irradiation Effects ◽  
Silicon Nitride Films

scholarly journals The impact of fluence dependent 120 MeV Ag swift heavy ion irradiation on the changes in structural, electronic, and optical properties of AgInSe2 nano-crystalline thin films for optoelectronic applications

RSC Advances ◽  
2021 ◽  
Vol 11 (42) ◽  
pp. 26218-26227
Author(s):  
R. Panda ◽  
S. A. Khan ◽  
U. P. Singh ◽  
R. Naik ◽  
N. C. Mishra
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Ion Irradiation ◽  
Heavy Ion ◽  
Swift Heavy Ion Irradiation ◽  
Heavy Ion Irradiation ◽  
Swift Heavy Ion ◽  
Nano Crystalline ◽  
Shi Irradiation ◽  
The Impact

Swift heavy ion (SHI) irradiation in thin films significantly modifies the structure and related properties in a controlled manner.

Correlation between changes in nanoscale structural and optical properties upon swift heavy ion irradiation of SiNx thin films

2021 ◽  
Vol 129 (3) ◽  
pp. 035108
Author(s):  
Harsh Gupta ◽  
Ravi K. Bommali ◽  
Santanu Ghosh ◽  
Himanshu Srivastava ◽  
Arvind Srivastava ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Ion Irradiation ◽  
Heavy Ion ◽  
Structural And Optical Properties ◽  
Swift Heavy Ion Irradiation ◽  
Heavy Ion Irradiation ◽  
Swift Heavy Ion

Electrical and Optical Properties of Si+ and P+ Implanted InP:Fe

1990 ◽  
Vol 201 ◽  
Author(s):  
Honglie Shen ◽  
Genqing Yang ◽  
Zuyao Zhou ◽  
Guanqun Xia ◽  
Shichang Zou
Keyword(s):  
Optical Properties ◽  
Silicon Nitride ◽  
Temperature Dependence ◽  
Optimal Condition ◽  
Room Temperature ◽  
Broad Band ◽  
Photoluminescence Spectra ◽  
Electrical And Optical Properties ◽  
Spectrum Measurement ◽  
Single Implant

AbstractDual implantations of Si+ and P+ into InP:Fe were performed both at 200°C and room temperature. Si+ ions were implanted by 150keV with doses ranging from 5×1013 /cm2 to 1×1015 /cm2, while P+ ions were implanted by 110keV. 160keV and 180keV with doses ranging from 1×l013 /cm2 to 1×1015 /cm2. Hall measurements and photoluminescence spectra were used to characterize the silicon nitride encapsulated annealed samples. It was found that enhanced activation can be obtained by Si+ and P+ dual implantations. The optimal condition for dual implantations is that the atomic distribution of implanted P overlaps that of implanted si with the same implant dose. For a dose of 5×l014 /cm2, the highest activation for dual implants is 70% while the activation for single implant is 40% after annealing at 750°C for 15 minutes. PL spectrum measurement was carried out at temperatures from 11K to 100K. A broad band at about 1.26eV was found in Si+ implanted samples, of which the intensity increased with increasing of the Si dose and decreased with increasing of the co-implant P+ dose. The temperature dependence of the broad band showed that it is a complex (Vp-Sip) related band. All these results indicate that silicon is an amphoteric species in InP.

scholarly journals A comparison study of boron emitter passivation by silicon oxide and a PECVD silicon nitride stack

2017 ◽  
Vol 124 ◽  
pp. 288-294 ◽  
Author(s):  
Barbora Mojrová ◽  
Haifeng Chu ◽  
Christop Peter ◽  
Pirmin Preis ◽  
Jan Lossen ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Silicon Oxide ◽  
Comparison Study

Optical Properties of Silicon Nitride

1973 ◽  
Vol 120 (2) ◽  
pp. 295 ◽  
Author(s):  
Herbert R. Philipp
Keyword(s):  
Optical Properties ◽  
Silicon Nitride

scholarly journals Optical Properties of Silicon-Rich Silicon Nitride (SixNyHz) from First Principles

Computation ◽  
2015 ◽  
Vol 3 (4) ◽  
pp. 657-669 ◽  
Author(s):  
Shu Tao ◽  
Anne Theulings ◽  
Violeta Prodanović ◽  
John Smedley ◽  
Harry van der Graaf
Keyword(s):  
Optical Properties ◽  
Silicon Nitride ◽  
First Principles

Surface modification by high-energy heavy-ion irradiation in various crystalline ZnO facets

2021 ◽  
Vol 23 (39) ◽  
pp. 22673-22684
Author(s):  
Adéla Jagerová ◽  
Romana Mikšová ◽  
Oleksander Romanenko ◽  
Iva Plutnarova ◽  
Zdeněk Sofer ◽  
...  
Keyword(s):  
Optical Properties ◽  
Surface Modification ◽  
Ion Irradiation ◽  
Heavy Ion ◽  
High Energy ◽  
Heavy Ion Irradiation ◽  
Surface Nanostructures ◽  
The Creation

The high-energy ion irradiation induces the creation of ZnO surface nanostructures affecting optical properties, which may be promising for photocatalysis and optoelectronics.

On the stability of optical properties of antireflection coatings for solar cells based on a silicon-silicon-oxide mixture

2013 ◽  
Vol 49 (1) ◽  
pp. 33-34
Author(s):  
U. Kh. Gaziev ◽  
M. U. Dzhanklych ◽  
V. G. Dyskin ◽  
Z. S. Settarova
Keyword(s):  
Optical Properties ◽  
Solar Cells ◽  
Silicon Oxide ◽  
Antireflection Coatings ◽  
Oxide Mixture ◽  
The Stability ◽  
Silicon Silicon

Controlling the formation of luminescent Si nanocrystals in plasma-enhanced chemical vapor deposited silicon-rich silicon oxide through ion irradiation

2002 ◽  
Vol 91 (5) ◽  
pp. 3236-3242 ◽  
Author(s):  
T. G. Kim ◽  
C. N. Whang ◽  
Yohan Sun ◽  
Se-Young Seo ◽  
Jung H. Shin ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Ion Irradiation ◽  
Chemical Vapor ◽  
Si Nanocrystals ◽  
Chemical Vapor Deposited
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