scholarly journals A comparison study of boron emitter passivation by silicon oxide and a PECVD silicon nitride stack

2017 ◽  
Vol 124 ◽  
pp. 288-294 ◽  
Author(s):  
Barbora Mojrová ◽  
Haifeng Chu ◽  
Christop Peter ◽  
Pirmin Preis ◽  
Jan Lossen ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Silicon Oxide ◽  
Comparison Study

Changes in the optical properties of films of silicon nitride, silicon oxinitride, and silicon oxide upon ion irradiation

1977 ◽  
Vol 26 (1) ◽  
pp. 129-131
Author(s):  
N. N. Gerasimenko ◽  
T. I. Kovalevskaya ◽  
V. G. Pan'kin ◽  
K. K. Svitashev ◽  
G. M. Tseitlin
Keyword(s):  
Optical Properties ◽  
Silicon Nitride ◽  
Silicon Oxide ◽  
Ion Irradiation

Synthesis of coaxial nanowires of silicon nitride sheathed with silicon and silicon oxide

2000 ◽  
Vol 115 (12) ◽  
pp. 683-686 ◽  
Author(s):  
X.C Wu ◽  
W.H Song ◽  
B Zhao ◽  
W.D Huang ◽  
M.H Pu ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Silicon Oxide

Wear and Nanomechanical Studies of Silicon Oxide and Silicon Nitride Thin Films for MEMS Applications

1998 ◽  
pp. 579-589 ◽  
Author(s):  
Z. Rymuza ◽  
Z. Kusznierewicz ◽  
M. Misiak ◽  
K. Schmidt-Szałowski ◽  
Z. Rżanek-Boroch ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Silicon Oxide

Self-Aligned Contacting Processes for the 80 nm p-MTJ Device Fabrication by Wet Approach

2018 ◽  
Vol 282 ◽  
pp. 152-157 ◽  
Author(s):  
Hu Shan Cui ◽  
Kai Hua Cao ◽  
You Guang Zhang ◽  
Hua Gang Xiong ◽  
Jia Qi Wei ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Magnesium Oxide ◽  
Building Block ◽  
Silicon Oxide ◽  
Process Integration ◽  
Electrical Contact ◽  
Device Fabrication ◽  
Integration Scheme ◽  
Ferromagnetic Metals ◽  
Wet Etch

In this work, a novel process integration scheme for p-MTJ devices’ passivation and contacting was proposed. The method can efficiently protect the ferromagnetic metals and the magnesium oxide which are the key building block of p-MTJs, and effectively make electrical contact with the interconnect metals for p-MTJs. The scheme consists of passivation of p-MTJs with dual dielectrics - silicon nitride and silicon oxide, followed by planarization and selective wet etch. The proposed integration scheme was successfully demonstrated with 80 nm size p-MTJ devices.

Analysis of silicon–oxide–silicon nitride stacks by medium-energy ion scattering

2000 ◽  
Vol 18 (5) ◽  
pp. 2503 ◽  
Author(s):  
D. Landheer ◽  
P. Ma ◽  
W. N. Lennard ◽  
I. V. Mitchell ◽  
C. McNorgan
Keyword(s):  
Silicon Nitride ◽  
Silicon Oxide ◽  
Medium Energy ◽  
Ion Scattering ◽  
Medium Energy Ion Scattering

In Vivo Biostability of CVD Silicon Oxide and Silicon Nitride Films

2005 ◽  
Vol 872 ◽  
Author(s):  
John M. Maloney ◽  
Sara A. Lipka ◽  
Samuel P. Baldwin
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Focused Ion Beam ◽  
Silicon Oxide ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Silicon Chips ◽  
Silicon Nitride Films

AbstractLow pressure chemical vapor deposition (LPCVD) and plasma enhanced chemical vapor deposition (PECVD) silicon oxide and silicon nitride films were implanted subcutaneously in a rat model to study in vivo behavior of the films. Silicon chips coated with the films of interest were implanted for up to one year, and film thickness was evaluated by spectrophotometry and sectioning. Dissolution rates were estimated to be 0.33 nm/day for LPCVD silicon nitride, 2.0 nm/day for PECVD silicon nitride, and 3.5 nm/day for PECVD silicon oxide. A similar PECVD silicon oxide dissolution rate was observed on a silicon oxide / silicon nitride / silicon oxide stack that was sectioned by focused ion beam etching. These results provide a biostability reference for designing implantable microfabricated devices that feature exposed ceramic films.

OUTDIFFUSION THROUGH SILICON OXIDE AND SILICON NITRIDE LAYERS ON GALLIUM ARSENIDE

1970 ◽  
Vol 17 (8) ◽  
pp. 332-334 ◽  
Author(s):  
J. Gyulai ◽  
J. W. Mayer ◽  
I. V. Mitchell ◽  
V. Rodriguez
Keyword(s):  
Gallium Arsenide ◽  
Silicon Nitride ◽  
Silicon Oxide ◽  
Nitride Layers
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