Fabrication and characterization of Ge nanocrystalline growth by ion implantation in SiO2 matrix

2007 ◽  
Vol 42 (18) ◽  
pp. 7757-7761 ◽  
Author(s):  
S. N. M. Mestanza ◽  
I. Doi ◽  
J. W. Swart ◽  
N. C. Frateschi
2002 ◽  
Vol 76 (3) ◽  
pp. 262-266 ◽  
Author(s):  
Ruiqin Ding ◽  
Hao Wang ◽  
Huidong Yang ◽  
Weilong She ◽  
Zhiren Qiu ◽  
...  

2019 ◽  
Vol 963 ◽  
pp. 390-393
Author(s):  
Takahiro Morikawa ◽  
Shintaroh Sato ◽  
Akio Shima

SiC DMOSFET with self-aligned channels was fabricated and characterized. The process features self-aligned channel formation by utilizing tilted ion implantation. We confirmed that channel areas were successfully formed along both sides of the stripe cell. Electrical measurements revealed that the characteristics of the fabricated DMOSFET chips had sufficiently high blocking voltage and moderate values of threshold voltage and on-state resistance. These experimental results show the proposed process can be an easy option for fabrication of SiC DMOSFET.


2016 ◽  
Vol 109 (6) ◽  
pp. 063502 ◽  
Author(s):  
J. B. S. Abraham ◽  
B. A. Aguirre ◽  
J. L. Pacheco ◽  
G. Vizkelethy ◽  
E. Bielejec

2004 ◽  
Vol 457-460 ◽  
pp. 1181-1184 ◽  
Author(s):  
Hoon Joo Na ◽  
Dae Hwan Kim ◽  
Sang Yong Jung ◽  
In Bok Song ◽  
Myung Yoon Um ◽  
...  

2019 ◽  
Vol 35 (4) ◽  
pp. 475-484
Author(s):  
SHIVA ARUN ◽  
◽  
PRABHA BHARTIYA ◽  
AMREEN NAZ ◽  
SUDHEER RAI ◽  
...  

2019 ◽  
Vol 139 (11) ◽  
pp. 375-380
Author(s):  
Harutoshi Takahashi ◽  
Yuta Namba ◽  
Takashi Abe ◽  
Masayuki Sohgawa

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