Fabrication and Characterization of 4H-SiC Planar MESFET Using Ion- Implantation

2004 ◽  
Vol 457-460 ◽  
pp. 1181-1184 ◽  
Author(s):  
Hoon Joo Na ◽  
Dae Hwan Kim ◽  
Sang Yong Jung ◽  
In Bok Song ◽  
Myung Yoon Um ◽  
...  
2019 ◽  
Vol 963 ◽  
pp. 390-393
Author(s):  
Takahiro Morikawa ◽  
Shintaroh Sato ◽  
Akio Shima

SiC DMOSFET with self-aligned channels was fabricated and characterized. The process features self-aligned channel formation by utilizing tilted ion implantation. We confirmed that channel areas were successfully formed along both sides of the stripe cell. Electrical measurements revealed that the characteristics of the fabricated DMOSFET chips had sufficiently high blocking voltage and moderate values of threshold voltage and on-state resistance. These experimental results show the proposed process can be an easy option for fabrication of SiC DMOSFET.


2016 ◽  
Vol 109 (6) ◽  
pp. 063502 ◽  
Author(s):  
J. B. S. Abraham ◽  
B. A. Aguirre ◽  
J. L. Pacheco ◽  
G. Vizkelethy ◽  
E. Bielejec

2007 ◽  
Vol 42 (18) ◽  
pp. 7757-7761 ◽  
Author(s):  
S. N. M. Mestanza ◽  
I. Doi ◽  
J. W. Swart ◽  
N. C. Frateschi

2019 ◽  
Vol 35 (4) ◽  
pp. 475-484
Author(s):  
SHIVA ARUN ◽  
◽  
PRABHA BHARTIYA ◽  
AMREEN NAZ ◽  
SUDHEER RAI ◽  
...  

2019 ◽  
Vol 139 (11) ◽  
pp. 375-380
Author(s):  
Harutoshi Takahashi ◽  
Yuta Namba ◽  
Takashi Abe ◽  
Masayuki Sohgawa

2015 ◽  
Vol 135 (11) ◽  
pp. 474-475
Author(s):  
Koji Sugano ◽  
Ryoji Hiraoka ◽  
Toshiyuki Tsuchiya ◽  
Osamu Tabata

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