scholarly journals Fabrication and characterization of a co-planar detector in diamond for low energy single ion implantation

2016 ◽  
Vol 109 (6) ◽  
pp. 063502 ◽  
Author(s):  
J. B. S. Abraham ◽  
B. A. Aguirre ◽  
J. L. Pacheco ◽  
G. Vizkelethy ◽  
E. Bielejec
2019 ◽  
Vol 963 ◽  
pp. 390-393
Author(s):  
Takahiro Morikawa ◽  
Shintaroh Sato ◽  
Akio Shima

SiC DMOSFET with self-aligned channels was fabricated and characterized. The process features self-aligned channel formation by utilizing tilted ion implantation. We confirmed that channel areas were successfully formed along both sides of the stripe cell. Electrical measurements revealed that the characteristics of the fabricated DMOSFET chips had sufficiently high blocking voltage and moderate values of threshold voltage and on-state resistance. These experimental results show the proposed process can be an easy option for fabrication of SiC DMOSFET.


2004 ◽  
Vol 457-460 ◽  
pp. 1181-1184 ◽  
Author(s):  
Hoon Joo Na ◽  
Dae Hwan Kim ◽  
Sang Yong Jung ◽  
In Bok Song ◽  
Myung Yoon Um ◽  
...  

2007 ◽  
Vol 42 (18) ◽  
pp. 7757-7761 ◽  
Author(s):  
S. N. M. Mestanza ◽  
I. Doi ◽  
J. W. Swart ◽  
N. C. Frateschi

2019 ◽  
Vol 35 (4) ◽  
pp. 475-484
Author(s):  
SHIVA ARUN ◽  
◽  
PRABHA BHARTIYA ◽  
AMREEN NAZ ◽  
SUDHEER RAI ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document