Comparative investigation on nanocrystal structure, optical, and electrical properties of ZnO and Sr-doped ZnO thin films using chemical bath deposition method

2008 ◽  
Vol 43 (6) ◽  
pp. 1776-1782 ◽  
Author(s):  
T. A. Vijayan ◽  
R. Chandramohan ◽  
S. Valanarasu ◽  
J. Thirumalai ◽  
S. P. Subramanian
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Chemical Bath Deposition ◽  
Comparative Investigation ◽  
Chemical Bath Deposition Method ◽  
Zno Thin Films ◽  
Optical And Electrical Properties ◽  
Deposition Method ◽  
Doped Zno

scholarly journals Influence of Codoping on the Optical Properties of ZnO Thin Films Synthesized on Glass Substrate by Chemical Bath Deposition Method

2014 ◽  
Vol 2014 ◽  
pp. 1-9 ◽  
Author(s):  
G. Shanmuganathan ◽  
I. B. Shameem Banu
Keyword(s):  
Thin Films ◽  
Chemical Bath Deposition ◽  
Hexagonal Structure ◽  
Chemical Bath Deposition Method ◽  
Zno Thin Films ◽  
Deposition Method ◽  
Hexagonal Wurtzite Crystal Structure ◽  
Uv Emission ◽  
Doped Zno ◽  
Gradual Variation

Fe and K simultaneously doped ZnO thin films Zn0.99K0.01(Fe)xO (x=1, 2, 3, and 4%) were synthesized by chemical bath deposition method. The XRD investigation reveals that all the doped ZnO thin films are in hexagonal wurtzite crystal structure without impurity phases. With increase in Fe concentration, the growth of thin films alongcaxis is evident from the XRD which indicates the increase in intensity along (002) direction. The same is visible from the surface morphology which shows the formation of hexagonal structure for higher Fe concentration. The topography shows gradual variation with Fe incorporation. The optical energy band gap obtained from the transmittance spectrum decreases from 3.42 to 3.06 eV with increase in Fe concentration indicating the red shift and this trend is consistent with the earlier experimental results. The UV emission is centered around 3.59 eV. The optical constants such as refractive index, extinction coefficient, and absorption coefficient which are essential for the optoelectronic applications were also determined.

Effect of O2partial pressure on optical and electrical properties in Al doped ZnO thin films

2014 ◽  
Vol 29 (5) ◽  
pp. 275-280 ◽  
Author(s):  
P. J. Cao ◽  
W. J. Liu ◽  
F. Jia ◽  
Y. X. Zeng ◽  
D. L. Zhu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Zno Thin Films ◽  
Optical And Electrical Properties ◽  
Doped Zno

RF Magnetron Sputtering Processed Transparent Conductive Aluminum Doped ZnO thin Films with Excellent Optical and Electrical Properties

2021 ◽  
Author(s):  
Chunhu Zhao ◽  
Junfeng Liu ◽  
Yixin Guo ◽  
Yanlin Pan ◽  
Xiaobo Hu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Carrier Concentration ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Band Model ◽  
Deposition Condition ◽  
Optical And Electrical Properties ◽  
Doped Zno

Abstract Aluminum doped ZnO thin films (AZO), which simultaneously transmit light and conduct electrical current, are widely applied in photovoltaic devices. To achieve high performance AZO thin films, the effects of RF magnetron sputtering conditions on the optical and electrical properties of the films has been explored. The optimized AZO thin films exhibit strong (002) orientated growth with hexagonal wurtzite structure. The minimum resistivity of 0.9Í10-3 Ω·cm, the highest carrier concentration of 2.8Í1020 cm-3, the best Hall mobility of 22.8 cm2·(V·s)-1 and average transmittance above 85% can be achieved at the optimum deposition condition of 0.2 Pa, 120 W and 200 °C. Considering the single parabolic band model, the bandgap shift by carrier concentration of the films can be attributed to the Burstein-Moss effect. The results indicate that RF magnetron sputtered AZO thin films are promising for solar cell applications relying on front contact layers.

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