A first-principles lattice dynamical study of type-I, type-II, and type-VIII silicon clathrates

2016 ◽  
Vol 51 (9) ◽  
pp. 4538-4548 ◽  
Author(s):  
Payam Norouzzadeh ◽  
Charles W. Myles
2005 ◽  
Vol 886 ◽  
Author(s):  
Matt Beekman ◽  
Jan Grkyo ◽  
George S. Nolas

ABSTRACTWe have synthesized the type II silicon clathrates Na1Si136 and Na8Si136, and report on the electrical and thermal transport in these materials. The crystal structure consists of a covalently bonded silicon framework in which sodium guest atoms are encapsulated inside the silicon host framework. Differential scanning calorimetry measurements show the compounds decompose above 600°C to diamond-structure silicon. Temperature dependant electrical resistivity measurements show the specimens to have an insulating character, with magnitudes that decrease with increasing sodium content. For the first time, thermal conductivity measurements on type II sodium-silicon clathrates are presented. The thermal conductivity is very low for both specimens, and for Na8Si136 exhibits a clear dip in the range from 50 to 70 K. These data suggest that the “rattling” behavior observed in type I clathrates may also be present in type II clathrates.


2008 ◽  
Vol 1 ◽  
pp. 031201 ◽  
Author(s):  
Kengo Kishimoto ◽  
Naoya Ikeda ◽  
Koji Akai ◽  
Tsuyoshi Koyanagi

2015 ◽  
Vol 119 (51) ◽  
pp. 28247-28257 ◽  
Author(s):  
Xihong Peng ◽  
Qun Wei ◽  
Ying Li ◽  
Candace K. Chan

2009 ◽  
Vol 113 (11) ◽  
pp. 4321-4326 ◽  
Author(s):  
Long-Hua Li ◽  
Ling Chen ◽  
Li-Ming Wu ◽  
Jun-Qian Li
Keyword(s):  
Type I ◽  

2001 ◽  
Vol 691 ◽  
Author(s):  
Shinji Munetoh ◽  
Koji Moriguchi ◽  
Teruaki Motooka ◽  
Kazuhito Kamei

ABSTRACTDynamical phenomena during the solid phase epitaxy (SPE) of guest-free Si clathrates (Si34 and Si46) via molecular-dynamics (MD) simulations using the Tersoff potential have been reported. The activation energy of SPE for Si34 has been found to correspond with the experimental value for the cubic diamond phase (c-Si; approximately 2.7eV), while the SPE rates of Si46 are much lower than that of c-Si. The structural transition from Si46 (type-I) to Si34 (type-II) can be also observed during the Si46 [001] SPE. The present results suggest that it is worthwhile to intensify experimental studies concerning crystal growth techniques of clathrate materials and these interesting Si forms may open up a new field in “silicon technologies”.


2010 ◽  
Vol 107 (12) ◽  
pp. 123720 ◽  
Author(s):  
Yasushi Kono ◽  
Nobuyuki Ohya ◽  
Takashi Taguchi ◽  
Koichiro Suekuni ◽  
Toshiro Takabatake ◽  
...  

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