Effect of annealing temperature on the performance of water motion energy harvesting in n-type silicon thin film by magnetron sputtering

Author(s):  
Hanyu Yao ◽  
Lei Wang ◽  
Xin Chen ◽  
Yuwei Jiang ◽  
Yushuang Liu ◽  
...  
2020 ◽  
Vol 981 ◽  
pp. 51-58
Author(s):  
Agus Geter Edy Sutjipto ◽  
Yit Pei Shian ◽  
Ali Shaitir ◽  
Mohamad Ashry Jusoh ◽  
Ari Legowo

This research deals with ambient energy harvesting by using zinc oxide thin film. The objectives of this thesis are to prove the ZnO film as a piezoelectric material can produce electric when vibration is applied and determine its optimal voltage. The thesis describes the sol gel spin coating technique to fabricate zinc oxide thin film. Zinc acetate dehydrate, absolute ethanol and diethanolamine were used in this thesis to act as sol gel precursor. Sol gel was coated on glass slide which wrapped by aluminum foil. The thin film was formed after preheating and annealing. The thin film was characterized by X-ray diffraction (XRD), Field Emission Scanning Electron Microscopy (FESEM), Photoluminescence spectroscopy (PL) and Ultraviolet-visible spectroscopy (UV-Vis) as well as analyzed using vibration technique. From XRD results, the films were preferentially diffracted at around 65° which corresponding to (1 1 2) diffraction phase. From FESEM results, it was observed that when the spin speed was increased at same annealing temperature, the thickness was also decreased. When the annealing temperature was increased at same spin speed, both grain size and thickness were increased. From the PL results, there was only film with spin speed of 2000 rpm and annealing temperature of 300 °C had slightly left wavelength which was 380 nm. Annealing temperature would affect only the intensity of PL wavelength. From the results of UV-Vis, it was observed that when the spin speed was increased at same annealing temperature, the band gap was decreased. When the annealing temperature was increased at same spin speed, the band gap was decreased. Piezoelectric test had proven the ZnO film could produce electricity. The maximum voltage (20.7 mV) was produced by the ZnO film with spin speed of 2000 rpm and annealing temperature of 300 °C.


2017 ◽  
Vol 268 ◽  
pp. 229-233
Author(s):  
A.R. Nurhamizah ◽  
Zuhairi Ibrahim ◽  
Rosnita Muhammad ◽  
Yussof Wahab ◽  
Samsudi Sakrani

This research aims to study the growth and the effect of annealing temperature on the structural properties of Platinum/YSZ/Platinum thin film. The thin films were prepared by RF and DC magnetron sputtering method utilized platinum as electrodes (anode and cathode) and YSZ as electrolyte. Two temperatures of annealing (400 and 600 °C) were conducted onto Platinum/YSZ/Platinum thin film for comparison in this study. Crystalline phase, microstructure and thickness of thin films were evaluated using X-Ray Diffraction (XRD) and Field Emission Scanning Electron Microscope (FE-SEM) technique. Results show that Pt/YSZ/Pt thin film without post-annealing gives a better morphology and crystal phase.


2015 ◽  
Vol 1096 ◽  
pp. 62-68
Author(s):  
Xi Cheng Xiong ◽  
Shuang Shuang Kang ◽  
Qian Chen ◽  
Jin Huang ◽  
Quan Xie ◽  
...  

In this paper, we have prepared the beta-FeSi2 thin film on Si substrate through the direct current magnetron sputtering technology. We have tested the samples by XRD, optical digital microscope (ODM), spectrophotometer, and SEM. Under the same annealing temperature at 1153 K, the annealing time has important influence on the optical characteristic of beta-FeSi2 thin film. More the thickness of the beta-FeSi2 thin film is thinner, and more the absorptivity of photo is higher. We should use the thinner beta-FeSi2 thin film with appropriate value of the thickness and must adopt the anti-reflection layer to fabricate the solar cell.


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