Preparation and ferroelectric properties of (124)-oriented SrBi4Ti4O15 ferroelectric thin film on (110)-oriented LaNiO3 electrode

ABSTRACTThe ferroelectric properties of PZT on RuO2 electrodes were compared to those on RuOStudy on Multilayered Electrodes for Ferroelectric Thin Film Capacitors. It seems that the microstructure of PZT film plays an important role in the improvement of electrical properties. In particular, the change in the grain size of PZT film is responsible for the enhancement of the electrical properties. It was found in this study that films with smaller grain size had larger coercive fields. The exact dependence of the grain size on the hysteretic property is not fully understood at present. However, it is believed that the grain size affects both domain formation and domain pinning because of the influence of grain boundaries. The change in physical properties of PZT films due to the bottom electrode is understood in terms of interfacial modifications. Here we report on a method to modify physical properties of PZT films utilizing interfacial engineering.

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Effect of microstructure on the ferroelectric properties of Eu-doped Bi4Ti3O12 ferroelectric thin film

Acta Physica Sinica ◽

10.7498/aps.60.027701 ◽

2011 ◽

Vol 60 (2) ◽

pp. 027701

Author(s):

吕业刚,梁晓琳

Keyword(s):

Thin Film ◽

Ferroelectric Properties ◽

Ferroelectric Thin Film ◽

Effect Of Microstructure

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Interfaces in Ferroelectric Metal Oxide Heterostructures

MRS Proceedings ◽

10.1557/proc-343-431 ◽

1994 ◽

Vol 343 ◽

Author(s):

R. Ramesh ◽

J. Lee ◽

V. G. Keramidas ◽

D. K. Fork ◽

S. Ghonge ◽

...

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Process Integration ◽

Ferroelectric Properties ◽

Ferroelectric Thin Film ◽

Integration Process ◽

Oxide Heterostructures ◽

Ferroelectric Capacitor ◽

Successful Solution

ABSTRACTRealization of a viable nonvolatile ferroelectric thin film memory technology hinges on the successful solution of the reliability problems associated with the ferroelectric capacitor concurrent with the integration of these materials with the appropriate Si-CMOS based drive electronics. This integration process introduces a variety of structural, chemical, ionic and electronic interfaces in the memory elements. In this paper, the influence of some of the interfaces on the ferroelectric properties and on the process integration is discussed.

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All Epitaxial Babi4Ti4O15 - LaNiO3 Heterostructures

MRS Proceedings ◽

10.1557/proc-541-205 ◽

1998 ◽

Vol 541 ◽

Cited By ~ 1

Author(s):

K. M. Satyalakshmi ◽

A. Pignolet ◽

M. Alexe ◽

N. D. Zakharov ◽

C. Harnagea ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Ferroelectric Properties ◽

Hysteresis Loops ◽

Ferroelectric Thin Film ◽

Epitaxial Thin Films ◽

Oxide Electrodes ◽

Deposition Parameters ◽

Ferroelectric Hysteresis ◽

Ferroelectric Oxides

AbstractBismuth-based layer-structured ferroelectric oxides are gaining much attention for ferroelectric thin film applications due to their low fatigue. Epitaxial thin films of these layered ferroelectric oxides grown on epitaxial perovskite-type conducting oxide electrodes such as LaNiO3 are known to further improve the fatigue resistance. In this paper the ferroelectric properties of BaBi4Ti4O15films grown by pulsed laser deposition on epitaxial LaNiO3/SrTiO3(100) and LaNiO3/YSZ/Si(100) substrates are presented. BaBi4Ti4O15thin films with mixed a - and c - orientation exhibit ferroelectric hysteresis loops with a remanent polarization Pr of 2 μC/cm2and a coercive field Ec of about 75 kV/cm. The effect of the deposition parameters on thin film orientation, morphology and the ferroelectric properties of BBiT are discussed.

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