Preparation and characterization of highly c-axis textured MgO buffer layer grown on Si(100) substrate by RF magnetron sputtering for use as growth template of ferroelectric thin film

2010 ◽  
Vol 22 (4) ◽  
pp. 430-436 ◽  
Author(s):  
Wen-Ching Shih ◽  
Tzyy-Long Wang ◽  
Ming-Han Chiang ◽  
Mu-Shiang Wu
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Buffer Layer ◽  
Ferroelectric Thin Film ◽  
Rf Magnetron Sputtering

scholarly journals Characterization of Al-Doped ZnO Thin Film Grown on Buffer Layer with RF Magnetron Sputtering Method

2009 ◽  
Vol 18 (3) ◽  
pp. 213-220 ◽  
Author(s):  
Young-Soo No ◽  
Dong-Hee Park ◽  
Tae-Whan Kim ◽  
Ji-Won Choi ◽  
Won-Kook Choi
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Buffer Layer ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Film ◽  
Doped Zno

Preparation and properties of highly (100)-oriented Pb(Zr0.2Ti0.8)O3 thin film prepared by rf magnetron sputtering with a PbOx buffer layer

2007 ◽  
Vol 101 (9) ◽  
pp. 094107 ◽  
Author(s):  
Jiagang Wu ◽  
Jiliang Zhu ◽  
Dingquan Xiao ◽  
Jianguo Zhu ◽  
Junzhe Tan ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Buffer Layer ◽  
Rf Magnetron Sputtering

Crystallinity and Photoluminescence Properties of ZnO Films on Zn Buffer Layers Deposited by rf Magnetron Sputtering

2007 ◽  
Vol 336-338 ◽  
pp. 567-570
Author(s):  
Chong Mu Lee ◽  
Anna Park ◽  
Young Joon Cho ◽  
Hyoun Woo Kim ◽  
Jae Gab Lee
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Buffer Layer ◽  
Rf Magnetron Sputtering ◽  
Buffer Layers ◽  
Zno Films ◽  
Zno Thin Film ◽  
Zno Film ◽  
Amorphous Sio2 ◽  
Si Substrates

It is very desirable to grow ZnO epitaxial films on Si substrates since Si wafers with a high quality is available and their prices are quite low. Nevertheless, it is not easy to grow ZnO films epitaxially on Si substrates directly because of formation of an amorphous SiO2 layer at the interface of ZnO and Si. A Zn film and an undoped ZnO film were deposited sequentially on an (100) Si substrate by rf magnetron sputtering. The sample was annealed at 700°C in a nitrogen atmosphere. X-ray diffraction (XRD), photoluminescence (PL) and atomic force microscopy (AFM) analyses were performed to investigate the cristallinity and surface morphology of the ZnO film. According to the analysis results the crystallinity of a ZnO thin film deposited by rf magnetron sputtering is substantially improved by using a Zn buffer layer. The highest ZnO film quality is obtained with a 110nm thick Zn buffer layer. The surface roughness of the ZnO thin film increases as the Zn buffer layer thickness increases.

Preparation of SrBi2Ta2O9 ferroelectric thin film by rf magnetron sputtering

1998 ◽  
Vol 21 (1-4) ◽  
pp. 407-418 ◽  
Author(s):  
Koukou Suu ◽  
Takeshi Masuda ◽  
Yutaka Nishioka ◽  
Noriakitani
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Ferroelectric Thin Film ◽  
Rf Magnetron Sputtering
Sign in / Sign up

Export Citation Format

Share Document