scholarly journals Characterization of Al-Doped ZnO Thin Film Grown on Buffer Layer with RF Magnetron Sputtering Method

2009 ◽  
Vol 18 (3) ◽  
pp. 213-220 ◽  
Author(s):  
Young-Soo No ◽  
Dong-Hee Park ◽  
Tae-Whan Kim ◽  
Ji-Won Choi ◽  
Won-Kook Choi
2007 ◽  
Vol 336-338 ◽  
pp. 567-570
Author(s):  
Chong Mu Lee ◽  
Anna Park ◽  
Young Joon Cho ◽  
Hyoun Woo Kim ◽  
Jae Gab Lee

It is very desirable to grow ZnO epitaxial films on Si substrates since Si wafers with a high quality is available and their prices are quite low. Nevertheless, it is not easy to grow ZnO films epitaxially on Si substrates directly because of formation of an amorphous SiO2 layer at the interface of ZnO and Si. A Zn film and an undoped ZnO film were deposited sequentially on an (100) Si substrate by rf magnetron sputtering. The sample was annealed at 700°C in a nitrogen atmosphere. X-ray diffraction (XRD), photoluminescence (PL) and atomic force microscopy (AFM) analyses were performed to investigate the cristallinity and surface morphology of the ZnO film. According to the analysis results the crystallinity of a ZnO thin film deposited by rf magnetron sputtering is substantially improved by using a Zn buffer layer. The highest ZnO film quality is obtained with a 110nm thick Zn buffer layer. The surface roughness of the ZnO thin film increases as the Zn buffer layer thickness increases.


2010 ◽  
Author(s):  
Zhou Yang ◽  
Hongfang Zheng ◽  
Xiaohong Li ◽  
Yingcai Peng ◽  
Qingxun Zhao ◽  
...  

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