Sonochemical assisted synthesis and spectroscopic characterization of Fe3+ doped ZnO diluted magnetic semiconductor

2014 ◽  
Vol 25 (9) ◽  
pp. 4179-4186 ◽  
Author(s):  
B. Babu ◽  
G. Thirumala Rao ◽  
V. Pushpa Manjari ◽  
K. Ravindranadh ◽  
R. Joyce Stella ◽  
...  
2002 ◽  
Vol 722 ◽  
Author(s):  
Shaoguang Yang ◽  
Silas T. Hung ◽  
Herman H.Y. Sung ◽  
A.B. Pakhomov ◽  
C.Y. Wong

AbstractSynthesis and characterization of transparent Co-doped ZnO and TiO2 diluted magnetic semiconductor (DMS) films are described. The films are prepared by single sputtering deposition. They are ferromagnetic at temperatures as high as 350 K. The films were characterized by X-ray diffraction (XRD), X-ray photoemission spectroscopy (XPS), X-ray fluorescence (XRF). Optical transparency was measured on UV/VIS spectrometer. The Codoped ZnO films had wurtzite structure similar to ZnO with the (002) preferential texture. Neither XRD nor XPS showed any presence of pure Co or CoO in the samples. The Co-doped TiO2 samples were amorphous, and some unoxidized Co was found in the films.


2020 ◽  
Vol 12 (4) ◽  
pp. 524-529
Author(s):  
C. Thirupathi ◽  
S. Nithiyanantham ◽  
M. Sentilkumar ◽  
A. Arivudainambi ◽  
S. Mahalakshmi ◽  
...  

The diluted magnetic semiconductor (DMS), are promising materials in the ferromagnetic exchange coupling between localized spins. ZnO nanoparticles in pure and cobalt doped with 2%, 4%, 6% and 8% were prepared through co-precipitation method at room temperature. XRD analysis showed the Co doped ZnO crystalizes in a wurzite structure. The particle size decreases with increase in concentration of cobalt. The SEM micrographs shows similar and regular equal in size depends with the increase of Co concentration and formation of spherical super structure and confirmed the Co2+ is completely replaced into the Zn2+ site of ZnO host structure. The size depends with the concentration are evident from EDAX analysis. The remarkable spin performances with increase of Co are confirming the above results.


2012 ◽  
Vol 727-728 ◽  
pp. 511-515 ◽  
Author(s):  
R. Torquato ◽  
E. Shirsath Sagar ◽  
Ruth Herta Goldsmith Aliaga Kiminami ◽  
Ana Cristina Figueiredo de Melo Costa

ZnO is a semiconductor that can be doped with transition metal ions, and thus becomes feasible to use in the diluted magnetic semiconductor (DMS), or semiconductor with magnetic properties. In this work we have studied the influence of doping of Ni+2on the structural, morphological and magnetic properties of Zn1-xNixO system, to x = 0.07, 0.1 and 0.2 mol of Ni+2synthesized by combustion reaction. The systems were characterized by XRD, SEM and VSM. The maximum temperatures ranged from 639 K and 683 K. All systems showed a majority phase formation of ZnO, with the presence of the second phase NiO. The crystallite size for the majority phase varied between 49 and 56nm. All systems have resulted in samples with a morphology consisting of dense clusters, formed by particles pre-sintered and shaped roughly hexagonal plates. The magnetic measurements showed that the values of saturation magnetization lies between 4.6 to 28.5emu/g, remanent magnetization of 0.01 to 0.3 emu/g, coercive force values varies between 12.7 and 62.4 Oe and Curie temperature ranging from 308 to 311K.


2012 ◽  
Vol 1394 ◽  
Author(s):  
Mei Fang ◽  
Wolfgang Voit ◽  
Adrica Kyndiah ◽  
Yan Wu ◽  
Lyubov Belova ◽  
...  

ABSTRACTRoom temperature magnetic properties of un-doped, as well as 10 at.% Fe-doped ZnO and MgO single-pass layer of ink-jet printed thin films have been investigated to obtain insight into the role of the band gaps and mechanisms for the origin of ferromagnetic order in these materials. It is found that on doping with Fe, the saturation magnetization is enhanced by several-fold in both systems when compared with the respective un-doped thin films. For a “28 nm thick film of Fe-doped ZnO (Diluted Magnetic Semiconductor, DMS) we observe an enhanced moment of 0.465μB /Fe atom while it is around 0.111μB/Fe atom for the doped MgO (Diluted Magnetic Insulator, DMI) film of comparable thickness. Also, the pure ZnO is far more ferromagnetic than pure MgO at comparable low film thicknesses which can be attributed to defect induced magnetism originating from cat-ion vacancies. However, the film thickness dependence of the magnetization and the defect concentrations are found to be significantly different in the two systems so that a comparison of the magnetism becomes more complex for thicker films.


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