Improved ferroelectric and dielectric properties of Sm, La co-doped Bi4Ti3O12 multifunctional thin films with orange-red emission

2019 ◽  
Vol 30 (14) ◽  
pp. 13158-13166 ◽  
Author(s):  
Xingru Du ◽  
Wenhua Huang ◽  
Santhosh Kumar Thatikonda ◽  
Ni Qin ◽  
Dinghua Bao
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Red Emission ◽  
Co Doped

Dielectric properties of Co-doped Ba0.5Sr0.5TiO3 thin films fabricated by pulsed laser deposition

2003 ◽  
Vol 259 (1-2) ◽  
pp. 137-143 ◽  
Author(s):  
S.Y. Wang ◽  
B.L. Cheng ◽  
Can Wang ◽  
H.B. Lu ◽  
Y.L. Zhou ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Co Doped

scholarly journals Ferroelectric and dielectric properties of Ca2+-doped and Ca2+–Ti4+ co-doped K0.5Na0.5NbO3 thin films

2020 ◽  
Vol 8 (15) ◽  
pp. 5102-5111
Author(s):  
Nikolai Helth Gaukås ◽  
Julia Glaum ◽  
Mari-Ann Einarsrud ◽  
Tor Grande
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Chemical Solution Deposition ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Si Substrates ◽  
Co Doped

Doped K0.5Na0.5NbO3 films with good ferroelectric and dielectric properties were prepared by aqueous chemical solution deposition on platinized Si substrates.

Effect of Ti Content on Microstructure and Dielectric Properties of Li and Ti Co-Doped NiO Thin Films

2007 ◽  
Vol 336-338 ◽  
pp. 2639-2642 ◽  
Author(s):  
Ya Ru Zhang ◽  
Bo Ping Zhang ◽  
Yan Dong ◽  
Jing Feng Li
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Room Temperature ◽  
Sol Gel ◽  
Dielectric Constants ◽  
Coating Method ◽  
Diffraction Peaks ◽  
Ti Content ◽  
Ti Doping ◽  
Co Doped

Li and Ti co-doped NiO thin films with 200 nm in thickness were deposited onto Pt/Ti/SiO2/ Si(100) substrates using a sol-gel spin-coating method. The effect of Ti doping content on microstructure and dielectric properties of Li0.10TixNi0.90-xO (x=5-20mol%) thin films was investigated. XRD results showed that all the Li0.10TixNi0.90-xO thin films consisted of a mixture of NiO, Li2NiO2 and NiTiO3 oxides. The intensities of the diffraction peaks for the NiTiO3 phase increased and those for NiO decreased with increasing Ti content, suggesting that a part of NiO phase combined with Ti to form NiTiO3 phase. The dielectric constants of all the Li0.10TixNi0.90-xO thin films at 102 Hz at room temperature ranged from 200 to 400 and increased with increasing Ti content. The frequency stability of the dielectric constant for the Li0.10TixNi0.90-xO thin films was also improved greatly with increasing Ti content.

Effects of Nb Content on the Ferroelectric and Dielectric Properties of Nb/Nd-Co-doped Bi4Ti3O12 Thin Films

2017 ◽  
Vol 47 (3) ◽  
pp. 1792-1797 ◽  
Author(s):  
Gong Yueqiu ◽  
Chen Hongyi ◽  
Xie Shuhong ◽  
Li Xujun
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Nb Content ◽  
Co Doped

970 nm Infrared to Visible Upconversion in Er3+ and Yb3+ Co-Doped PLZT Glass Ceramic Thin Films

2008 ◽  
Author(s):  
Xiaomei Guo ◽  
Kewen Kevin. Li ◽  
Xuesheng Chen ◽  
Yingyin Kevin. Zou ◽  
Hua Jiang
Keyword(s):  
Thin Films ◽  
Glass Ceramic ◽  
Ceramic Thin Films ◽  
Co Doped

Influence of N Dopant on the Electric and Magnetic Properties of Co Doped ZnO Thin Films

2010 ◽  
Vol 25 (7) ◽  
pp. 711-716 ◽  
Author(s):  
Xue-Tao WANG ◽  
Li-Ping ZHU ◽  
Zhi-Gao YE ◽  
Zhi-Zhen YE ◽  
Bing-Hui ZHAO
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Zno Thin Films ◽  
Doped Zno ◽  
Co Doped

IN-PLANE DIELECTRIC PROPERTIES OF BST THIN FILMS GROWN ON MgO SUBSTRATES USING THE THIN PEROVSKITE LAYERS FOR MICROWAVE TUNABLE ELECTRONICS

2006 ◽  
Vol 86 (1) ◽  
pp. 159-169 ◽  
Author(s):  
SU-JAE LEE ◽  
HAN-CHEOL RYU ◽  
YOUNG-TAE KIM ◽  
MIN-HWAN KWAK ◽  
SEUNGEON MOON ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Bst Thin Films
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