Effect of Ti Content on Microstructure and Dielectric Properties of Li and Ti Co-Doped NiO Thin Films

Li and Ti co-doped NiO thin films with 200 nm in thickness were deposited onto Pt/Ti/SiO2/ Si(100) substrates using a sol-gel spin-coating method. The effect of Ti doping content on microstructure and dielectric properties of Li0.10TixNi0.90-xO (x=5-20mol%) thin films was investigated. XRD results showed that all the Li0.10TixNi0.90-xO thin films consisted of a mixture of NiO, Li2NiO2 and NiTiO3 oxides. The intensities of the diffraction peaks for the NiTiO3 phase increased and those for NiO decreased with increasing Ti content, suggesting that a part of NiO phase combined with Ti to form NiTiO3 phase. The dielectric constants of all the Li0.10TixNi0.90-xO thin films at 102 Hz at room temperature ranged from 200 to 400 and increased with increasing Ti content. The frequency stability of the dielectric constant for the Li0.10TixNi0.90-xO thin films was also improved greatly with increasing Ti content.

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Dielectric properties of Co-doped Ba0.5Sr0.5TiO3 thin films fabricated by pulsed laser deposition

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2003.07.023 ◽

2003 ◽

Vol 259 (1-2) ◽

pp. 137-143 ◽

Cited By ~ 27

Author(s):

S.Y. Wang ◽

B.L. Cheng ◽

Can Wang ◽

H.B. Lu ◽

Y.L. Zhou ◽

...

Keyword(s):

Thin Films ◽

Dielectric Properties ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Co Doped

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Ferroelectric and dielectric properties of Ca2+-doped and Ca2+–Ti4+ co-doped K0.5Na0.5NbO3 thin films

Journal of Materials Chemistry C ◽

10.1039/d0tc00276c ◽

2020 ◽

Vol 8 (15) ◽

pp. 5102-5111

Author(s):

Nikolai Helth Gaukås ◽

Julia Glaum ◽

Mari-Ann Einarsrud ◽

Tor Grande

Keyword(s):

Thin Films ◽

Dielectric Properties ◽

Chemical Solution Deposition ◽

Chemical Solution ◽

Solution Deposition ◽

Si Substrates ◽

Co Doped

Doped K0.5Na0.5NbO3 films with good ferroelectric and dielectric properties were prepared by aqueous chemical solution deposition on platinized Si substrates.

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Photoluminescence and dielectric properties of (Al/Cu) and (In/Cu) co-doped ZnO sprayed thin films under the oxygen deficiency conditions

Superlattices and Microstructures ◽

10.1016/j.spmi.2020.106731 ◽

2020 ◽

pp. 106731

Author(s):

B. Askri ◽

I. Riahi ◽

R. Mimouni ◽

M. Amlouk

Keyword(s):

Thin Films ◽

Dielectric Properties ◽

Oxygen Deficiency ◽

Doped Zno ◽

Co Doped

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Synthesis and Structure of Sol-Gel Derived PST/Bi2Ti2O7 Composite Thin Films

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.336-338.1400 ◽

2007 ◽

Vol 336-338 ◽

pp. 1400-1402

Author(s):

Yong Lin Zhao ◽

Pi Yi Du ◽

Wen Jian Weng ◽

Gao Rong Han

Keyword(s):

Thin Films ◽

Dielectric Properties ◽

Dielectric Loss ◽

Strontium Titanate ◽

Sol Gel ◽

Pyrochlore Phase ◽

Composite Thin Films ◽

Impedance Analyzer ◽

Gel Method ◽

Ti Content

PST/Bi2Ti2O7 composite thin films were prepared by sol-gel method through heavily doping Bi3+ into lead strontium titanate (PST). The film with mono pyrochlore phase of Bi2Ti2O7 was also fabricated by controlling the Ti content in precursors. XRD, SEM and impedance analyzer measured the phase status, morphology and dielectric properties of the thin films, respectively. As a result, in the composite thin films, there was some Pb and Sr dissolved in Bi2Ti2O7, and the amount of dissolving ions decreased with the reduction of their composition in precursors. Bi4Ti3O12 impurity in crystalline Bi2Ti2O7 was due to the instability of Bi, and excess Ti in stoichiometry could make the film maintain to be mono pyrochlore phase. PST/Bi2Ti2O7 composite thin films had lower permittivity and lower dielectric loss than mono PST thin films.

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