Hydrogen Dilution Influence on the SIC Films Optical and Micro-Structural Properties as the Window Layer of P-i-n Solar Cell

2011 ◽  
Vol 216 ◽  
pp. 266-270
Author(s):  
Bao Yu Xu ◽  
Hui Dong Yang ◽  
Bo Huang ◽  
Jun Dai Shi
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Band Gap ◽  
Structural Properties ◽  
Optical Band Gap ◽  
Optimal Growth ◽  
Window Layer ◽  
Dilution Ratio ◽  
Hydrogen Dilution ◽  
Sic Films

The SiC thin films as the window layer was prepared by PECVD technology in this article, investigated the influence of hydrogen dilution on the optical and micro-structural properties of SiC thin films, Analyzed optical band-gap，deposition rate and surface morphology under different hydrogen dilution ratio, found the optimal growth craft under the same conditions. The results showed that the optical band-gap of the window layer achieved the widest 2.2ev when hydrogen dilution rate was 6.25.

Hydrogen Dilution Influence on the SiC Films Preparation and Structural Properties as the Window Layer of p-i-n Solar Cell

2010 ◽  
Vol 160-162 ◽  
pp. 1228-1232
Author(s):  
Bao Yu Xu ◽  
Hui Dong Yang ◽  
Bo Huang ◽  
Jun Dai Shi
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Solar Cell ◽  
Surface Morphology ◽  
Dilution Rate ◽  
Optical Band Gap ◽  
Optimal Growth ◽  
Window Layer ◽  
Hydrogen Dilution ◽  
Sic Films

The SiC thin films as the window layer of p-i-n solar cell was prepared by PECVD technology in this article,investigated the influence of hydrogen dilution on the structure and optical properties of SiC thin films,found the optimal growth craft under the same conditions. The results showed that the optical band-gap of the window layer achieved the widest 2.2ev when hydrogen dilution rate was 6.25, furthermore, got inerratic surface morphology with deposition rate up to 0.1nm / s.

scholarly journals Transition metal doped pyrite (FeS2) thin films: structural properties and evaluation of optical band gap energies

2015 ◽  
Vol 3 (46) ◽  
pp. 12068-12076 ◽  
Author(s):  
Sadia Khalid ◽  
Mohammad Azad Malik ◽  
David J. Lewis ◽  
Punarja Kevin ◽  
Ejaz Ahmed ◽  
...  
Keyword(s):  
Thin Films ◽  
Transition Metal ◽  
Band Gap ◽  
Structural Properties ◽  
Optical Band Gap ◽  
Iron Pyrite ◽  
Metal Doped

The properties of transition metal doped iron pyrite thin films deposited by AACVD have been studied.

OPTICAL AND ELECTRICAL PROPERTIES OF THALLIUM SULPHIDE AND TlxMySz (M=Cu,Bi,Sb) thin films

2001 ◽  
Vol 15 (17n19) ◽  
pp. 737-740 ◽  
Author(s):  
VERÓNICA ESTRELLA ◽  
ROGELIO MEJÍA ◽  
M.T.S. NAIR ◽  
P.K. NAIR
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Electrical Properties ◽  
Band Gap ◽  
Optical Band Gap ◽  
Optical And Electrical Properties ◽  
Thallium Nitrate

Tl2S thin films (0.05μm-1μm) were deposited from chemical bath containing thallium nitrate and thiourea. These films possess an indirect optical band gap of about 1 eV. Multi-layer films: Tl2S-CuS , Tl2S-Bi2S3 and Tl2S-Sb2S3 films were prepared, which when annealed at 300°C led to the formation of CuTlS2 (tetragonal, E g.dir = 1.25 eV), Bi2Tl4S5 (orthorhombic, E g.dir = 2.05 eV), TlSbS2 (triclinic, E g.dir = 1.92 eV), as confirmed by XRD. Optical band gap of 1.4 eV - 2 eV suggests possible application as absorber materials in solar cell.

SEL DEPOSITION OF CADMIUM CHALCOGENIDES AND OPTIMIZATION FOR PHOTOVOLTAIC USE

1999 ◽  
Vol 13 (26) ◽  
pp. 953-959
Author(s):  
M. USMAN KHAN ◽  
SHAHZAD NASEEM ◽  
M. IQBAL MUNAWWAR ◽  
E. M. NAZAR
Keyword(s):  
Thin Films ◽  
Structural Analysis ◽  
Band Gap ◽  
Structural Properties ◽  
Optical Band Gap ◽  
Hexagonal Structure ◽  
Optimum Conditions ◽  
Cadmium Chalcogenides ◽  
Elemental Layer ◽  
Deposited Films

The stacked elemental layer (SEL) technique has been used to deposit thin films of CdTe, CdSe and CdSeTe. The deposited films are then annealed in air at various temperatures in the range 50–150°C for 60 minutes. The resultant films are then studied for their optoelectrical and structural properties in order to find the optimum conditions for their use in the field of photovoltaics. It is found that resulting films possess low values of resistivity and the optical band gap lies in the range suitable for photovoltaic use. Structural analysis indicates that films of CdSe and CdSeTe are a mixture of cubic and hexagonal phases whereas CdTe tends to crystallize in hexagonal structure.

Hydrogen Dilution of Silane: Correlation Between the Structure and Optical Band Gap in Gd a-Si:H Films

1990 ◽  
Vol 192 ◽  
Author(s):  
H. Meiling ◽  
M. J. Van Den Boogaard ◽  
R.E.I. Schropp ◽  
J. Bezemer ◽  
W.F. Van der Weg
Keyword(s):  
Band Gap ◽  
Structural Properties ◽  
Hydrogen Concentration ◽  
Optical Band Gap ◽  
Pronounced Decrease ◽  
Hydrogen Dilution

ABSTRACTThe influence of diluting SiH4 with H2 on the optical and structural properties of a-Si:H has been investigated. The major effects of the dilution are a pronounced decrease of the amount of (Si-H2)n-chains, an increase of the macroscopic density, and a decrease of the total amount of incorporated hydrogen in the films. Different models for the structure as a function of the hydrogen concentration are deduced. We also present new data on the dependence of the optical band gap Eg on the hydrogen concentration and density of the films. An important result from this work is that Eg appears to correlate with the distance between the silicon atoms, rather than with the overall hydrogen concentration.

Stability Investigation in the Optical Properties of Thermally Evaporated Ge5Se95-x Znx Thin Films

2015 ◽  
Vol 7 (3) ◽  
pp. 1923-1930
Author(s):  
Austine Amukayia Mulama ◽  
Julius Mwakondo Mwabora ◽  
Andrew Odhiambo Oduor ◽  
Cosmas Mulwa Muiva ◽  
Boniface Muthoka ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Thermal Evaporation ◽  
Optical Transition ◽  
Bulk Material ◽  
Band Gap Energy ◽  
Optical Absorbance ◽  
Gap Energy ◽  
Constituent Elements

 Selenium-based chalcogenides are useful in telecommunication devices like infrared optics and threshold switching devices. The investigated system of Ge5Se95-xZnx (0.0 ≤ x ≤ 4 at.%) has been prepared from high purity constituent elements. Thin films from the bulk material were deposited by vacuum thermal evaporation. Optical absorbance measurements have been performed on the as-deposited thin films using transmission spectra. The allowed optical transition was found to be indirect and the corresponding band gap energy determined. The variation of optical band gap energy with the average coordination number has also been investigated based on the chemical bonding between the constituents and the rigidity behaviour of the system’s network.

Single Crystal, High Band Gap CdS Thin Films Grown by RF Magnetron Sputtering in Argon Atmosphere for Solar Cell Applications

2018 ◽  
Vol 10 (3) ◽  
pp. 03005-1-03005-6 ◽  
Author(s):  
Rupali Kulkarni ◽  
◽  
Amit Pawbake ◽  
Ravindra Waykar ◽  
Ashok Jadhawar ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Magnetron Sputtering ◽  
Single Crystal ◽  
Band Gap ◽  
Rf Magnetron Sputtering ◽  
Argon Atmosphere ◽  
Cds Thin Films ◽  
High Band
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