Homogeneous dual-gate MoS2 field-effect transistors integrated by atomic layer deposition-based film synthesis

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-020-03113-3 ◽

2020 ◽

Vol 31 (7) ◽

pp. 5485-5491 ◽

Author(s):

Tao Chen ◽

Yang Wang ◽

Tianbao Zhang ◽

Hao Zhu ◽

Lin Chen ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Field Effect ◽

Field Effect Transistors ◽

Atomic Layer ◽

Layer Deposition ◽

Dual Gate ◽

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The Influence of Hf-Composition on Atomic Layer Deposition HfSiON Gated Metal–Oxide–Semiconductor Field-Effect Transistors after Channel-Hot-Carrier Stress

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c009 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C009 ◽

Author(s):

Shuang-Yuan Chen ◽

Hung-Wen Chen ◽

Chuan-Hsi Liu ◽

Li-Wei Cheng

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Layer Deposition ◽

Hot Carrier Stress

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GaAs-based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition

Journal of Electronic Materials ◽

10.1007/s11664-004-0220-9 ◽

2004 ◽

Vol 33 (8) ◽

pp. 912-915 ◽

Author(s):

P. D. Ye ◽

G. D. Wilk ◽

B. Yang ◽

J. Kwo ◽

H. -J. L. Gossmann ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Layer Deposition

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Atomic layer deposition effect on the electrical properties of Al2O3-passivated PbS quantum dot field-effect transistors

Applied Physics Letters ◽

10.1063/1.4914304 ◽

2015 ◽

Vol 106 (9) ◽

pp. 093507 ◽

Author(s):

Hye-Mi So ◽

Hyekyoung Choi ◽

Hyung Cheoul Shim ◽

Seung-Mo Lee ◽

Sohee Jeong ◽

...

Keyword(s):

Electrical Properties ◽

Atomic Layer Deposition ◽

Quantum Dot ◽

Field Effect ◽

Field Effect Transistors ◽

Atomic Layer ◽

Layer Deposition ◽

Deposition Effect ◽

Pbs Quantum Dot

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Impact of oxide gate electrode for ferroelectric field-effect transistors with metal-ferroelectric-metal-insulator-semiconductor gate stack using undoped HfO2 thin films prepared by atomic layer deposition

Nanotechnology ◽

10.1088/1361-6528/abc98c ◽

2020 ◽

Vol 32 (8) ◽

pp. 085709

Author(s):

Se-Na Choi ◽

Seung-Eon Moon ◽

Sung-Min Yoon

Keyword(s):

Atomic Layer Deposition ◽

Field Effect ◽

Field Effect Transistors ◽

Atomic Layer ◽

Gate Electrode ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Layer Deposition

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Admittance and subthreshold characteristics of atomic-layer-deposition Al2O3 on In0.53Ga0.47As in surface and buried channel flatband metal-oxide-semiconductor field effect transistors

Journal of Applied Physics ◽

10.1063/1.4720940 ◽

2012 ◽

Vol 111 (10) ◽

pp. 104112 ◽

Author(s):

G. W. Paterson ◽

S. J. Bentley ◽

M. C. Holland ◽

I. G. Thayne ◽

J. Ahn ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Buried Channel ◽

Layer Deposition

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Gate hysteresis originating from atomic layer deposition of Al2 O3 onto suspended carbon nanotube field-effect transistors

physica status solidi (b) ◽

10.1002/pssb.201100088 ◽

2011 ◽

Vol 248 (11) ◽

pp. 2664-2667 ◽

Author(s):

Matthias Muoth ◽

Valentin Döring ◽

Christofer Hierold

Keyword(s):

Carbon Nanotube ◽

Atomic Layer Deposition ◽

Field Effect ◽

Field Effect Transistors ◽

Atomic Layer ◽

Layer Deposition

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Atomic Layer Deposition of SiO2for the Performance Enhancement of Fin Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.116503 ◽

2013 ◽

Vol 52 (11R) ◽

pp. 116503 ◽

Author(s):

Kazuhiko Endo ◽

Yuki Ishikawa ◽

Takashi Matsukawa ◽

Yongxun Liu ◽

Shin-ichi O'uchi ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Field Effect ◽

Performance Enhancement ◽

Field Effect Transistors ◽

Atomic Layer ◽

Layer Deposition

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Effects of In-Situ Plasma-Enhanced Atomic Layer Deposition Treatment on the Performance of HfO2/In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors

IEEE Electron Device Letters ◽

10.1109/led.2016.2581175 ◽

2016 ◽

pp. 1-1 ◽

Author(s):

Quang Luc ◽

Shou Cheng ◽

Po Chang ◽

Huy Do ◽

Jin Chen ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Layer Deposition

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Low interface defect density of atomic layer deposition BeO with self-cleaning reaction for InGaAs metal oxide semiconductor field effect transistors

Applied Physics Letters ◽

10.1063/1.4833815 ◽

2013 ◽

Vol 103 (22) ◽

pp. 223504 ◽

Author(s):

H. S. Shin ◽

J. H. Yum ◽

D. W. Johnson ◽

H. R. Harris ◽

Todd. W. Hudnall ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Defect Density ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Layer Deposition ◽

Interface Defect

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Capacitive effective thickness of a few nanometers by atomic layer deposition and device performance in Ge gate-all-around fin field effect transistors

Journal of Micro/Nanolithography MEMS and MOEMS ◽

10.1117/1.jmm.14.4.044501 ◽

2015 ◽

Vol 14 (4) ◽

pp. 044501

Author(s):

Chu-Lin Chu ◽

Bo-Yuan Chen ◽

Yiin-Kuen Fuh

Keyword(s):

Atomic Layer Deposition ◽

Field Effect ◽

Field Effect Transistors ◽

Atomic Layer ◽

Effective Thickness ◽

Device Performance ◽

Layer Deposition

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