Effects of In-Situ Plasma-Enhanced Atomic Layer Deposition Treatment on the Performance of HfO2/In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors
2009 ◽
Vol 48
(4)
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pp. 04C009
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2004 ◽
Vol 33
(8)
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pp. 912-915
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