Electrical characterization of silicon nitride interlayer-based MIS diode

2020 ◽  
Vol 31 (12) ◽  
pp. 9888-9893 ◽  
Author(s):  
A. Buyukbas-Ulusan ◽  
A. Tataroglu
Keyword(s):  
Silicon Nitride ◽  
Electrical Characterization ◽  
Mis Diode

Electrical Characterization of Mos Memory Devices with Self-Assembled Tungsten Nano-Dots Dispersed in Silicon Nitride

2019 ◽  
Vol 18 (1) ◽  
pp. 33-37
Author(s):  
Yanli Pei ◽  
Chengkuan Yin ◽  
Masahiko Nishijima ◽  
Toshiya Kojima ◽  
Hiroshi Noriha ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Electrical Characterization ◽  
Memory Devices ◽  
Self Assembled

scholarly journals Barrier Modification by Methyl Violet Organic Dye Molecules of Ag/P-Inp Structures

2016 ◽  
Vol 2 (3) ◽  
pp. 7 ◽  
Author(s):  
Ömer Güllü
Keyword(s):  
Barrier Height ◽  
Methyl Violet ◽  
Electrical Characterization ◽  
Interface State ◽  
State Density ◽  
Mis Structure ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Mis Diode

This work includes fabrication and electrical characterization of Metal/Interlayer/Semiconductor (MIS) structures with methyl violet organic film on p-InP wafer. Metal(Ag)/ Interlayer (methyl violet =MV)/Semiconductor(p-InP) MIS structure presents a rectifying contact behavior. The values of ideality factor (n) and barrier height (BH) for the Ag/MV/p-InP MIS diode by using the current-voltage (I-V) measurement have been extracted as 1.21 and 0.84 eV, respectively. It was seen that the BH value of 0.84 eV calculated for the Ag/MV/p-InP MIS structure was significantly higher than the value of 0.64 eV of Ag/p-InP control contact. This situation was ascribed to the fact that the MV organic interlayer increased the effective barrier height by influencing the space charge region of inorganic semiconductor. The values of diffusion potential and barrier height for the Ag/MV/p-InP MIS diode by using the capacitance-voltage (C-V) measurement have been extracted as 1.21 V and 0.84 eV, respectively. The interface-state density of the Ag/MV/p-InP structure was seen to change from 2.57×1013 eV-1cm-2 to 2.19×1012 eV-1cm-2.

Nanoscale mechanical and electrical characterization of the interphase in polyimide/silicon nitride nanocomposites

2021 ◽  
Author(s):  
Mohammed Houssat ◽  
Christina Villeneuve-Faure ◽  
Nadine Lahoud Dignat ◽  
Jean-Pascal Cambronne
Keyword(s):  
Silicon Nitride ◽  
Electrical Characterization

Electrical Characterization of Polyfluorene-Based Metal-Insulator-Semiconductor Diodes

2006 ◽  
Vol 937 ◽  
Author(s):  
M. Yun ◽  
M. Arif ◽  
S. Gangopadhyay ◽  
S. Guha
Keyword(s):  
Layer Structure ◽  
Electrical Characterization ◽  
Doping Density ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Light Emitting ◽  
Unintentional Doping ◽  
Current Voltage ◽  
Mis Diode

ABSTRACTPolyfluorenes (PFs) have emerged as a promising family of blue polymer light-emitting diodes (PLED) due to their high electroluminescence quantum yield. Metal-insulator-semiconductor (MIS) diodes are the two terminal analogues of thin film transistors sharing the same basic layer structure. We have investigated two different structures based on poly [9,9'-(di 2-ethylhexyl)fluorene] (PF2/6), a MIS diode and a hole-only PLED. The MIS diodes were fabricated with the PF2/6 layer on p+ Si /Al2O3 substrates, and were characterized by means of capacitance-voltage (C-V) measurements as a function of frequency. From C-V measurements, the unintentional doping density is evaluated as ∼5.7×1017 cm−3 at frequencies above 20 kHz. The interface trap density is estimated as ∼7.2×1011 eV−1cm−2 at 10 kHz. Current-voltage measurements of PF2/6-based PLEDs shows a shallow trap space-charge-limited conduction from which the energy of the traps and hole mobilities are estimated.

scholarly journals Influence of interlayer trapping and detrapping mechanisms on the electrical characterization of hafnium oxide/silicon nitride stacks on silicon

2008 ◽  
Vol 104 (9) ◽  
pp. 094107 ◽  
Author(s):  
H. García ◽  
S. Dueñas ◽  
H. Castán ◽  
A. Gómez ◽  
L. Bailón ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Hafnium Oxide ◽  
Electrical Characterization

Frequency Dependent Electrical Characterization of Al∕Al[sub 2]O[sub 3]∕PbSe-PVA MIS Diode

2011 ◽  
Author(s):  
Isha Gawri ◽  
Mamta Sharma ◽  
S. K. Tripathi ◽  
S. K. Tripathi ◽  
Keya Dharamvir ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Frequency Dependent ◽  
Mis Diode

scholarly journals Barrier Modification by Methyl Violet Organic Dye Molecules of Ag/P-Inp Structures

2016 ◽  
Vol 2 (3) ◽  
pp. 7 ◽  
Author(s):  
Ömer Güllü
Keyword(s):  
Barrier Height ◽  
Methyl Violet ◽  
Electrical Characterization ◽  
Interface State ◽  
State Density ◽  
Mis Structure ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Mis Diode

This work includes fabrication and electrical characterization of Metal/Interlayer/Semiconductor (MIS) structures with methyl violet organic film on p-InP wafer. Metal(Ag)/ Interlayer (methyl violet =MV)/Semiconductor(p-InP) MIS structure presents a rectifying contact behavior. The values of ideality factor (n) and barrier height (BH) for the Ag/MV/p-InP MIS diode by using the current-voltage (I-V) measurement have been extracted as 1.21 and 0.84 eV, respectively. It was seen that the BH value of 0.84 eV calculated for the Ag/MV/p-InP MIS structure was significantly higher than the value of 0.64 eV of Ag/p-InP control contact. This situation was ascribed to the fact that the MV organic interlayer increased the effective barrier height by influencing the space charge region of inorganic semiconductor. The values of diffusion potential and barrier height for the Ag/MV/p-InP MIS diode by using the capacitance-voltage (C-V) measurement have been extracted as 1.21 V and 0.84 eV, respectively. The interface-state density of the Ag/MV/p-InP structure was seen to change from 2.57×1013 eV-1cm-2 to 2.19×1012 eV-1cm-2.

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