Electrical Characterization of Polyfluorene-Based Metal-Insulator-Semiconductor Diodes

2006 ◽  
Vol 937 ◽  
Author(s):  
M. Yun ◽  
M. Arif ◽  
S. Gangopadhyay ◽  
S. Guha
Keyword(s):  
Layer Structure ◽  
Electrical Characterization ◽  
Doping Density ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Light Emitting ◽  
Unintentional Doping ◽  
Current Voltage ◽  
Mis Diode

ABSTRACTPolyfluorenes (PFs) have emerged as a promising family of blue polymer light-emitting diodes (PLED) due to their high electroluminescence quantum yield. Metal-insulator-semiconductor (MIS) diodes are the two terminal analogues of thin film transistors sharing the same basic layer structure. We have investigated two different structures based on poly [9,9'-(di 2-ethylhexyl)fluorene] (PF2/6), a MIS diode and a hole-only PLED. The MIS diodes were fabricated with the PF2/6 layer on p+ Si /Al2O3 substrates, and were characterized by means of capacitance-voltage (C-V) measurements as a function of frequency. From C-V measurements, the unintentional doping density is evaluated as ∼5.7×1017 cm−3 at frequencies above 20 kHz. The interface trap density is estimated as ∼7.2×1011 eV−1cm−2 at 10 kHz. Current-voltage measurements of PF2/6-based PLEDs shows a shallow trap space-charge-limited conduction from which the energy of the traps and hole mobilities are estimated.

Electrical characterization of metal–insulator–semiconductor capacitors with xerogel as dielectric

2002 ◽  
Vol 80 (10) ◽  
pp. 1800-1802 ◽  
Author(s):  
E. Anulekha Manjari ◽  
A. Subrahmanyam ◽  
N. DasGupta ◽  
A. DasGupta
Keyword(s):  
Electrical Characterization ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor

scholarly journals Barrier Modification by Methyl Violet Organic Dye Molecules of Ag/P-Inp Structures

2016 ◽  
Vol 2 (3) ◽  
pp. 7 ◽  
Author(s):  
Ömer Güllü
Keyword(s):  
Barrier Height ◽  
Methyl Violet ◽  
Electrical Characterization ◽  
Interface State ◽  
State Density ◽  
Mis Structure ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Mis Diode

This work includes fabrication and electrical characterization of Metal/Interlayer/Semiconductor (MIS) structures with methyl violet organic film on p-InP wafer. Metal(Ag)/ Interlayer (methyl violet =MV)/Semiconductor(p-InP) MIS structure presents a rectifying contact behavior. The values of ideality factor (n) and barrier height (BH) for the Ag/MV/p-InP MIS diode by using the current-voltage (I-V) measurement have been extracted as 1.21 and 0.84 eV, respectively. It was seen that the BH value of 0.84 eV calculated for the Ag/MV/p-InP MIS structure was significantly higher than the value of 0.64 eV of Ag/p-InP control contact. This situation was ascribed to the fact that the MV organic interlayer increased the effective barrier height by influencing the space charge region of inorganic semiconductor. The values of diffusion potential and barrier height for the Ag/MV/p-InP MIS diode by using the capacitance-voltage (C-V) measurement have been extracted as 1.21 V and 0.84 eV, respectively. The interface-state density of the Ag/MV/p-InP structure was seen to change from 2.57×1013 eV-1cm-2 to 2.19×1012 eV-1cm-2.

Precise Electrical Characterization of LEDs with Wide-Band Material

2013 ◽  
Vol 411-414 ◽  
pp. 1654-1659
Author(s):  
Yang Li ◽  
Lie Feng Feng ◽  
Cun Da Wang ◽  
Qiong Yong Xing
Keyword(s):  
Multiple Quantum Well ◽  
Forward Bias ◽  
Low Frequency ◽  
Electrical Characterization ◽  
Wide Band ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Current Voltage ◽  
Red Led

The accurate electrical properties of semiconductor GaN based blue Light-Emitting Diodes (LED) with Multiple-Quantum Well (MQW) structure and GaAsP based red LED, were measured by single Capacitance-Voltage (C-V) method and single Current-Voltage (I-V) method at large forward bias. After comparing the experimental results, we found that the apparent capacitance Cp of GaN based blue LED and GaAsP based red LED measured by C-V method display obviously negative value at large forward bias and low frequency, which is in conflict with the well known Shockley's p-n junction theory and model. Besides, the precise Characterization of apparent capacitance Cp and apparent conductance Gp is obtained.

scholarly journals Electrical Characterization of Low Nitrogen Content Plasma Deposited and Rapid Thermal Annealed Al/SiNx:H/InP Metal-Insulator-Semiconductor Structures

2000 ◽  
Vol 39 (Part 1, No. 11) ◽  
pp. 6212-6215 ◽  
Author(s):  
Helena Castán ◽  
Salvador Dueñas ◽  
Juan Barbolla ◽  
Estefanía Redondo ◽  
Ignacio Mártil ◽  
...  
Keyword(s):  
Nitrogen Content ◽  
Electrical Characterization ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Semiconductor Structures ◽  
Low Nitrogen

Electrical Characterization of Deposited and Oxidized Ta2Si as Dielectric Film for SiC Metal-Insulator-Semiconductor Structures

2004 ◽  
Vol 457-460 ◽  
pp. 845-848 ◽  
Author(s):  
Amador Pérez-Tomás ◽  
Dominique Tournier ◽  
Josep Montserrat ◽  
Narcis Mestres ◽  
F. Sandiumenge ◽  
...  
Keyword(s):  
Dielectric Film ◽  
Electrical Characterization ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Semiconductor Structures
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