Electrical Characterization of Mos Memory Devices with Self-Assembled Tungsten Nano-Dots Dispersed in Silicon Nitride

2019 ◽  
Vol 18 (1) ◽  
pp. 33-37
Author(s):  
Yanli Pei ◽  
Chengkuan Yin ◽  
Masahiko Nishijima ◽  
Toshiya Kojima ◽  
Hiroshi Noriha ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Electrical Characterization ◽  
Memory Devices ◽  
Self Assembled

Electrical Characterization of Unipolar Organic Resistive Memory Devices Scaled Down by a Direct Metal-Transfer Method

2011 ◽  
Vol 23 (18) ◽  
pp. 2104-2107 ◽  
Author(s):  
Jin Ju Kim ◽  
Byungjin Cho ◽  
Ki Seok Kim ◽  
Takhee Lee ◽  
Gun Young Jung
Keyword(s):  
Electrical Characterization ◽  
Metal Transfer ◽  
Memory Devices ◽  
Resistive Memory ◽  
Transfer Method

Electrical characterization of self-assembled single- and double-stranded DNA monolayers using conductive AFM

2006 ◽  
Vol 131 ◽  
pp. 367-376 ◽  
Author(s):  
Hezy Cohen ◽  
Claude Nogues ◽  
Daniela Ullien ◽  
Shirley Daube ◽  
Ron Naaman ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Conductive Afm ◽  
Dna Monolayers ◽  
Double Stranded Dna ◽  
Self Assembled

Synthesis and Electrical Characterization of a MOS Memory Containing Pt Nanoparticles Deposited at a SiO2/ HfO2 Interface

2004 ◽  
Vol 830 ◽  
Author(s):  
Ch. Sargentis ◽  
K. Giannakopoulos ◽  
A. Travlos ◽  
D. Tsamakis
Keyword(s):  
High Frequency ◽  
Semiconductor Nanocrystals ◽  
Electrical Characterization ◽  
Pt Nanoparticles ◽  
Memory Device ◽  
Memory Devices ◽  
High K ◽  
High K Dielectric ◽  
Mos Device

ABSTRACTMOS memory devices containing semiconductor nanocrystals have drawn considerable attention recently, due to their advantages when compared to the conventional memories. Only little work has been done on memory devices containing metal nanoparticles.We describe the fabrication of a novel MOS device with embedded Pt nanoparticles in the HfO2 / SiO2 interface of a MOS device. Using as control oxide, a high-k dielectric, our device has a great degree of scalability. The fabricated nanoparticles are very small (about 5 nm) and have high density. High frequency C-V measurements demonstrate that this device operates as a memory device.

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