Effect of Ta doping on the properties of β-Ga2O3 heteroepitaxial films prepared on KTaO3(100) substrates

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Bibi Malmal Moshtaghioun ◽  
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RSC Advances ◽  
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Hongping Li ◽  
Shuai Liu ◽  
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First-principles calculations are conducted to investigate the impact of Ta doping on the atomistic structures and electronic properties of the technologically relevant 2H-NbSe2.


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N. Pellegri ◽  
O. de Sanctis ◽  
M. G. Stachiotti

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pp. 9794-9801 ◽  
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Bo-Eun Park ◽  
Il-Kwon Oh ◽  
Jong Seo Park ◽  
Seunggi Seo ◽  
David Thompson ◽  
...  

Ta doping into ZrO2 suppresses the oxygen vacancy formation and changes the crystal structure, leading to simultaneous improvement of dielectric constant and leakage currents.


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