AbstractIn this paper, the field emission properties of nano-diamond films were investigated by measuring the curves of emission current density (J) versus applied electric field (E). The nano-diamond films were prepared on n-type (100) silicon substrate by microwave plasma enhanced chemical vapor deposition (MPECVD) technique using a gas mixture of nitrogen-methane-hydrogen. Field emission results show that, with increasing hydrogen gas flow ratio of [H2]/[N2+CH4+H2] from 0 to 10 %, diamond grain size increases from 5 to 60 nm, threshold electric field for electron field emission increases from 1.2 to 5.75 V/μm, and emission current density decreases from 820 to 560 μA/cm2, demonstrating that small grain size nano-diamond films are promising as a cathode material for low-field electron emitters.
Active vacuum brazing of CNT films to metal substrates for superior electron field emission performance
