Evaluation of sorption and diffusion behavior of selenium in crushed granite by through-diffusion column tests

2010 ◽  
Vol 285 (3) ◽  
pp. 733-739 ◽  
Author(s):  
Tsuey-Lin Tsai ◽  
Chuan-Pin Lee ◽  
Tzung-Yi Lin ◽  
Hwa-Jou Wei ◽  
Lee-Chung Men
Keyword(s):  
Column Tests ◽  
Diffusion Behavior ◽  
Crushed Granite ◽  
Diffusion Column ◽  
Through Diffusion ◽  
And Diffusion

Determination of sorption and diffusion parameters of 99Tc in crushed granite using through-diffusion experiments

2016 ◽  
Vol 311 (2) ◽  
pp. 1111-1116 ◽  
Author(s):  
Yu-Hung Shih ◽  
Tsuey-Lin Tsai ◽  
Liang-Cheng Chen ◽  
Te-Yen Su ◽  
Chuan-Pin Lee ◽  
...  
Keyword(s):  
Diffusion Parameters ◽  
Crushed Granite ◽  
Through Diffusion ◽  
And Diffusion

Sorption and diffusion behavior of actinium(iii) ions in contact with hydroxyapatite as a transporter of medical radionuclides

2020 ◽  
Vol 69 (12) ◽  
pp. 2286-2293
Author(s):  
A. V. Severin ◽  
A. N. Vasiliev ◽  
A. V. Gopin ◽  
K. I. Enikeev
Keyword(s):  
Diffusion Behavior ◽  
And Diffusion ◽  
Medical Radionuclides

Sorption and diffusion of HTO and cesium in crushed granite compacted to different lengths

2007 ◽  
Vol 275 (2) ◽  
pp. 371-378 ◽  
Author(s):  
Chuan-Pin Lee ◽  
Shih-Chin Tsai ◽  
Yi-Lin Jan ◽  
Yuan-Yaw Wei ◽  
Shi-Ping Teng ◽  
...  
Keyword(s):  
Crushed Granite ◽  
And Diffusion

Nitrogen Implantation and Diffusion in Silicon

1999 ◽  
Vol 568 ◽  
Author(s):  
Lahir Shaik Adam ◽  
Mark E. Law ◽  
Omer Dokumaci ◽  
Yaser Haddara ◽  
Cheruvu Murthy ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Gate Oxide ◽  
Nitrogen Diffusion ◽  
Nitrogen Implantation ◽  
Oxide Interface ◽  
Diffusion Behavior ◽  
Czochralski Silicon ◽  
Interface Modeling ◽  
And Diffusion ◽  
Silicon Silicon

ABSTRACTNitrogen implantation can be used to control gate oxide thicknesses [1,2]. This study aims at studying the fundamental behavior of nitrogen diffusion in silicon. Nitrogen at sub-amorphizing doses has been implanted as N2+ at 40 keV and 200 keV into Czochralski silicon wafers. Furnace anneals have been performed at a range of temperatures from 650°C through 1050°C. The resulting annealed profiles show anomalous diffusion behavior. For the 40 keV implants, nitrogen diffuses very rapidly and segregates at the silicon/ silicon-oxide interface. Modeling of this behavior is based on the theory that the diffusion is limited by the time to create a mobile nitrogen interstitial.

Experimental research of flow rate and diffusion behavior of nature gas leakage underwater

2020 ◽  
Vol 65 ◽  
pp. 104119
Author(s):  
Yixiang Zhang ◽  
Jianlu Zhu ◽  
Youmei Peng ◽  
Jun Pan ◽  
Yuxing Li
Keyword(s):  
Experimental Research ◽  
Flow Rate ◽  
Diffusion Behavior ◽  
Gas Leakage ◽  
Nature Gas ◽  
And Diffusion

Adsorption and diffusion of lithium in a graphene/blue-phosphorus heterostructure and the effect of an external electric field

2017 ◽  
Vol 19 (1) ◽  
pp. 267-275 ◽  
Author(s):  
Kaimin Fan ◽  
Jing Tang ◽  
Shiyun Wu ◽  
Chengfu Yang ◽  
Jiabo Hao
Keyword(s):  
Electric Field ◽  
External Electric Field ◽  
Diffusion Behavior ◽  
And Diffusion

The adsorption and diffusion behavior of Li in a G/BP heterostructure can be modulated by an external electric field.

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