Electric-field-induced antiferroelectric to ferroelectric and ferroelectric to paraelectric phase transition at various temperatures in (Pb, La)(Zr, Ti)O3 antiferroelectric thick films

2012 ◽  
Vol 62 (3) ◽  
pp. 414-418 ◽  
Author(s):  
Jun Liu ◽  
Wenping Geng ◽  
Xiujian Chou ◽  
Wendong Zhang
Keyword(s):  
Phase Transition ◽  
Electric Field ◽  
Paraelectric Phase ◽  
Thick Films ◽  
Paraelectric Phase Transition ◽  
Antiferroelectric Thick Films

Structures and Dielectric Properties of (Pb, La)(Zr, Ti)O3 Antiferroelectric Thick Films Prepared by Different Sintering Procedures

2012 ◽  
Vol 503 ◽  
pp. 375-380 ◽  
Author(s):  
Wen Ping Geng ◽  
Xiu Jian Chou ◽  
Yong Bo Lv ◽  
Ji Jun Xiong ◽  
Wen Dong Zhang
Keyword(s):  
Phase Transition ◽  
Electric Field ◽  
Crystal Orientation ◽  
Thick Films ◽  
Sol Gel ◽  
Temperature Dependent ◽  
Dielectric Constant And Loss ◽  
Sol Gel Process ◽  
Paraelectric State ◽  
Antiferroelectric Thick Films

(Pb,La)(Zr,Ti)O3antiferroelectric thick films were prepared on Pt (111)/ Ti/SiO2/Si (100) substrates by a sol-gel process. The effects of single annealing and multistep annealing on the structures and electric properties of the films were investigated. The crystal orientation and structure of the antiferroelectric thick films were studied. The thick films by multistep annealing have higher (100)-preferred orientation than them by single annealing. The surface of the films was more smooth, compact and uniform by single annealing. The antiferroelectric nature of the (Pb,La)(Zr,Ti)O3antiferroelectric thick films by various sintering procedures was demonstrated by P(polarization)-E(electric field) and C(capactitance)-E(electric field). The temperature dependent of the dielectric constant and loss was measured under the frequency 1, 10, and 100 kHz and comparing with traditional signal annealing, the films have phase transition from antiferroelectric state to paraelectric state by multistep annealing.

scholarly journals Electric-field control of the ferro-paraelectric phase transition in Cu:KTN crystals

2017 ◽  
Vol 25 (23) ◽  
pp. 28776 ◽  
Author(s):  
Xin Zhang ◽  
Hongliang Liu ◽  
Zhuan Zhao ◽  
Xuping Wang ◽  
Pengfei Wu
Keyword(s):  
Phase Transition ◽  
Electric Field ◽  
Paraelectric Phase ◽  
Paraelectric Phase Transition ◽  
Field Control

Phase Transition Characterization Dependent on Temperature and DC Electric Field for (Pb, La) (Zr, Ti)O3 Antiferroelectric Thick Films

2012 ◽  
Vol 503 ◽  
pp. 97-102 ◽  
Author(s):  
Xiu Jian Chou ◽  
Miao Xuan Du ◽  
Yong Bo Lv ◽  
Jun Liu ◽  
Wen Dong Zhang
Keyword(s):  
Phase Transition ◽  
Dielectric Constant ◽  
Electric Field ◽  
Applied Field ◽  
Thick Films ◽  
Sol Gel ◽  
Silicon Substrates ◽  
Dielectric Constant And Loss ◽  
Dc Electric Field ◽  
Antiferroelectric Thick Films

Pb0.97La0.02(Zr0.95Ti0.05)O3 antiferroelectric thick films were prepared on platinized silicon substrates by sol–gel methods. Films showed polycrystalline perovskite structure with a strong (100) preferred orientation. The antiferroelectric nature of the films was confirmed by the double hysteresis behaviors versus applied field. The temperature dependence of dielectric constant and loss displayed the Curie temperature was 225oC.The current caused by the polarization and depolarization of polar was detected at coupling application of electric field and temperature. The phase transition characterization could be effectively adjusted by electric field and temperature.

Probing the effect of ferroelectric to paraelectric phase transition on the Ti-3d and O-2p hybridization in BaTiO3

2019 ◽  
Vol 125 (21) ◽  
pp. 214102 ◽  
Author(s):  
Gyanendra Panchal ◽  
R. J. Choudhary ◽  
Satish Yadav ◽  
D. M. Phase
Keyword(s):  
Phase Transition ◽  
Paraelectric Phase ◽  
Paraelectric Phase Transition

scholarly journals A tetragonal tungsten bronze-type photocatalyst: Ferro-paraelectric phase transition and photocatalysis

2016 ◽  
Vol 37 (8) ◽  
pp. 1257-1262 ◽  
Author(s):  
Dayong Fan ◽  
Ruifeng Chong ◽  
Fengtao Fan ◽  
Xiuli Wang ◽  
Can Li ◽  
...  
Keyword(s):  
Phase Transition ◽  
Paraelectric Phase ◽  
Tungsten Bronze ◽  
Paraelectric Phase Transition ◽  
Tetragonal Tungsten Bronze

Use of an External Electric Field to Convert the Paraelectric Phase to the Ferroelectric Phase in Ultra-thin Copolymer Films of P(VDF-TrFE)

2000 ◽  
Vol 655 ◽  
Author(s):  
Matt Poulsen ◽  
S. Adenwalla ◽  
Stephen Ducharme ◽  
V.M. Fridkin ◽  
S.P. Palto ◽  
...  
Keyword(s):  
Phase Transition ◽  
Electric Field ◽  
External Electric Field ◽  
Ferroelectric Phase ◽  
Paraelectric Phase ◽  
Continuous Process ◽  
Structural Phase ◽  
X Ray Diffraction ◽  
Layer Spacing ◽  
X Ray

AbstractX-ray diffraction was used to probe the structural changes associated with the conversion of the paraelectric phase to the ferroelectric phase that results from the application of a large external electric field. The samples under study are ultrathin (150 to 250 Å) Langmuir-Blodgett films of the copolymer vinylidene fluoride (70%) with trifluoroethylene (30%) deposited on aluminum-coated silicon. Theta-2theta X-ray diffraction was used to measure the change in inter-layer spacing perpendicular to the film surface. Upon heating at zero external electric field, the crystalline films undergo a structural phase transition, at 100± 5°C, from the all-trans ferroelectric phase to the trans-gauche paraelectric phase. [1,2] Above the phase transition temperature, the non-polar paraelectric phase can be converted back to the polar ferroelectric phase, in a smooth continuous process, using a large external electric field (∼1 GV/m). For example, at 100° C the ferroelectric phase first appears above 0.2 GV/m and increases steadily in proportion while the paraelectric phase decreases until complete conversion to the ferroelectric phase is achieved at approximately 0.6 GV/m.

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