Structures and Dielectric Properties of (Pb, La)(Zr, Ti)O3 Antiferroelectric Thick Films Prepared by Different Sintering Procedures

(Pb,La)(Zr,Ti)O3antiferroelectric thick films were prepared on Pt (111)/ Ti/SiO2/Si (100) substrates by a sol-gel process. The effects of single annealing and multistep annealing on the structures and electric properties of the films were investigated. The crystal orientation and structure of the antiferroelectric thick films were studied. The thick films by multistep annealing have higher (100)-preferred orientation than them by single annealing. The surface of the films was more smooth, compact and uniform by single annealing. The antiferroelectric nature of the (Pb,La)(Zr,Ti)O3antiferroelectric thick films by various sintering procedures was demonstrated by P(polarization)-E(electric field) and C(capactitance)-E(electric field). The temperature dependent of the dielectric constant and loss was measured under the frequency 1, 10, and 100 kHz and comparing with traditional signal annealing, the films have phase transition from antiferroelectric state to paraelectric state by multistep annealing.

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Phase Transition Characterization Dependent on Temperature and DC Electric Field for (Pb, La) (Zr, Ti)O3 Antiferroelectric Thick Films

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.503.97 ◽

2012 ◽

Vol 503 ◽

pp. 97-102 ◽

Cited By ~ 2

Author(s):

Xiu Jian Chou ◽

Miao Xuan Du ◽

Yong Bo Lv ◽

Jun Liu ◽

Wen Dong Zhang

Keyword(s):

Phase Transition ◽

Dielectric Constant ◽

Electric Field ◽

Applied Field ◽

Thick Films ◽

Sol Gel ◽

Silicon Substrates ◽

Dielectric Constant And Loss ◽

Dc Electric Field ◽

Antiferroelectric Thick Films

Pb0.97La0.02(Zr0.95Ti0.05)O3 antiferroelectric thick films were prepared on platinized silicon substrates by sol–gel methods. Films showed polycrystalline perovskite structure with a strong (100) preferred orientation. The antiferroelectric nature of the films was confirmed by the double hysteresis behaviors versus applied field. The temperature dependence of dielectric constant and loss displayed the Curie temperature was 225oC.The current caused by the polarization and depolarization of polar was detected at coupling application of electric field and temperature. The phase transition characterization could be effectively adjusted by electric field and temperature.

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Dielectric Properties of Pb0.97La0.02Zr0.95Ti0.05O3 Antiferroelectric Thin Films Prepared at Different Annealing Temperatures

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.287-290.2460 ◽

2011 ◽

Vol 287-290 ◽

pp. 2460-2463

Author(s):

Wen Ping Geng ◽

Xiu Jian Chou ◽

Ya Ting Zhang ◽

Mao Xiang Guo ◽

Jun Liu

Keyword(s):

Thin Films ◽

Dielectric Properties ◽

Electric Field ◽

Sol Gel ◽

X Ray Diffraction ◽

Temperature Dependent ◽

Dielectric Constant And Loss ◽

Sol Gel Process ◽

Plzt Thin Films

Pb0.97La0.02Zr0.95Ti0.05O3(PLZT) antiferroelectric thin films were prepared on Pt (111)/ Ti/SiO2/Si (100) substrates by a sol-gel process. The influences of annealing temperature on the structures and dielectric properties of the PLZT antiferroelectric thin films were investigated. And the phase structure and crystal orientation were studied by X-ray diffraction analyses (XRD). The antiferroelectric characterization of the PLZT thin films annealed at different temperature was demonstrated by P(polarization)-E(electric field) and C(capactitance)-E(electric field) curves. The maximum polarizations for the films annealed at 650°C, 700°C and 750°C were 35μC/cm2, 42μC/cm2and 47μC/cm2, respectively. The temperature dependent of the dielectric constant and loss was measured under the frequency 1, 10, 100 and 1000 kHz. The films annealed at 700°C have high (100)-preferred orientation and excellent dielectric properties.

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Electric-field-induced antiferroelectric to ferroelectric and ferroelectric to paraelectric phase transition at various temperatures in (Pb, La)(Zr, Ti)O3 antiferroelectric thick films

Journal of Sol-Gel Science and Technology ◽

10.1007/s10971-012-2742-6 ◽

2012 ◽

Vol 62 (3) ◽

pp. 414-418 ◽

Cited By ~ 9

Author(s):

Jun Liu ◽

Wenping Geng ◽

Xiujian Chou ◽

Wendong Zhang

Keyword(s):

Phase Transition ◽

Electric Field ◽

Paraelectric Phase ◽

Thick Films ◽

Paraelectric Phase Transition ◽

Antiferroelectric Thick Films

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Microcantilevers Fabrication Process of Silicon-Based (Pb, La)(Zr, Ti)O3 Antiferroelectric Thick Films for Microactuator Applications

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.80-81.13 ◽

2011 ◽

Vol 80-81 ◽

pp. 13-17 ◽

Cited By ~ 5

Author(s):

Yu Hua Yang ◽

Zhen Yu Zhao ◽

Xin Feng Guan ◽

Xiu Jian Chou

Keyword(s):

Thick Film ◽

Thick Films ◽

Sol Gel ◽

Xrd Analysis ◽

X Ray Diffraction ◽

Sol Gel Process ◽

Mems Technology ◽

Antiferroelectric Thick Films ◽

Silicon Based ◽

Design And Manufacture

(Pb, La) (Zr, Ti)O3 (PLZT) antiferroelectric thick films were deposited on Pt (111)/ Ti/SiO2/Si (100) substrates via sol-gel process. X-ray diffraction (XRD) analysis indicated that the films derived on Pt (111)/ Ti/SiO2/Si (100) substrates showed strong (111) preferred orientation. The Bulk and Surface silicon of micromachining process were employed in the silicon-based antiferroelectric thick film microcantilever fabrication, such as wet chemical etching for PLZT, inductive couple plasmas (ICP)for silicon etching, platinum etching and so on. Challenges such as Pt/Ti bottom electrode and morphology of PLZT thick film were solved, the integration of functional antiferroelectric materials and MEMS technology, provide a new way of thinking for the design and manufacture of micro-actuators.

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Polycrystalline La0.8Sr0.2GaO3 perovskite synthesized by sol–gel process along with temperature dependent photoluminescence

Journal of Luminescence ◽

10.1016/j.jlumin.2016.08.045 ◽

2017 ◽

Vol 181 ◽

pp. 1-7 ◽

Cited By ~ 4

Author(s):

F. Belkhiria ◽

F.I.H. Rhouma ◽

S. Hcini ◽

M. Daoudi ◽

H. Gammoudi ◽

...

Keyword(s):

Sol Gel ◽

Temperature Dependent ◽

Sol Gel Process ◽

Temperature Dependent Photoluminescence

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The coexisting negative and positive electrocaloric effect in (Pb0.97La0.02)(Zr, Sn, Ti)O3 antiferroelectric thick films optimized via phase transition procedure

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-018-9587-x ◽

2018 ◽

Vol 29 (17) ◽

pp. 14528-14534 ◽

Cited By ~ 4

Author(s):

Yong Li ◽

Hongcheng Gao ◽

Yunying Liu ◽

Liwen Zhang ◽

Xihong Hao

Keyword(s):

Phase Transition ◽

Thick Films ◽

Electrocaloric Effect ◽

Antiferroelectric Thick Films ◽

Transition Procedure

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Effect of Solvent Used in the Preparation of Aluminum-Doped ZnO as Electron Acceptor Layer on the Characteristic of its Hybrid Solar Cell

Materials Science Forum ◽

10.4028/www.scientific.net/msf.737.74 ◽

2013 ◽

Vol 737 ◽

pp. 74-79

Author(s):

Annisa Aprilia ◽

Priastuti Wulandari ◽

Rahmat Hidayat

Keyword(s):

Solar Cell ◽

Electron Acceptor ◽

Crystal Orientation ◽

Sol Gel ◽

Photocurrent Density ◽

Hybrid Solar Cell ◽

Ion Concentration ◽

X Ray Diffraction ◽

Sol Gel Process ◽

Aluminum Doped Zinc Oxide

Aluminum doped Zinc Oxide (AZO) layer has been employed as electron acceptor in hybrid solar cell based on Poly(3-hexylthiophene) with inverted structure. AZO layers used in this work were prepared by sol-gel process using two different solvents, namely methanol and methoxyethanol. From X-ray diffraction measurements, AZO layer prepared using methanol solvent (AZO-me) indicates the formation of crystallines with the same (002) orientation, whereas AZO layer prepared using methoxyethanol (AZO-mx) indicates the formation of crystallines with (100), (002), and (101) orientations. The nanomorphology of those AZO layer surfaces was also remarkably different, which might be related to differences in crystal orientation. For both solvents, the photocurrent density-voltage (J-V) characteristics were also affected by the Al ion concentration in AZO layer. However, solar cell with AZO-mx shows better performances in comparison to that of AZO-me with the same Al ion concentration. The observation of performance variations in those fabricated solar cells are suggested to be strongly related with the crystal orientation and nanomorphology of AZO layer. These experimental results then suggest that charge carrier dissociation by AZO layer are significantly influenced by the crystal orientation and nanomorphology of AZO layer, which are affected by the solvent used for preparing the AZO layer.

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Structure and properties of PZT thick films prepared by a modified sol-gel process

Ferroelectrics ◽

10.1080/00150190108016022 ◽

2001 ◽

Vol 260 (1) ◽

pp. 231-236 ◽

Cited By ~ 1

Author(s):

Qifa Zhou ◽

Qingqi Zhang ◽

Helen Lai Wah Chan ◽

Chung Loong Choy

Keyword(s):

Thick Films ◽

Sol Gel ◽

Structure And Properties ◽

Sol Gel Process

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Temperature and electric field induced phase transition in [110]C-oriented 0.63Pb(Mg1/3Nb2/3)O3–0.37PbTiO3 single crystals

CrystEngComm ◽

10.1039/c5ce01738f ◽

2015 ◽

Vol 17 (45) ◽

pp. 8664-8670 ◽

Cited By ~ 10

Author(s):

Wenhui He ◽

Qiang Li ◽

Nengneng Luo ◽

Yiling Zhang ◽

Qingfeng Yan

Keyword(s):

Phase Transition ◽

Electric Field ◽

Light Microscopy ◽

Single Crystals ◽

Polarized Light ◽

Polarized Light Microscopy ◽

Temperature Dependent ◽

Dependent Domain

Temperature-dependent domain configurations were studied for both unpoled and poled [110]C-oriented 0.63Pb(Mg1/3Nb2/3)O3–0.37PbTiO3 (PMN–0.37PT) single crystals by polarized light microscopy (PLM).

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