Phase evolution and electrical properties of BaO–SrO–TiO2–SiO2–Al2O3-based glass ceramics prepared by sol–gel process

2014 ◽  
Vol 72 (3) ◽  
pp. 581-586 ◽  
Author(s):  
Qingyu Pang ◽  
Yong Zhang ◽  
Jia Zhu ◽  
Xiaozhen Song ◽  
Xiangrong Wang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Sol Gel ◽  
Glass Ceramics ◽  
Phase Evolution ◽  
Sol Gel Process

ChemInform Abstract: Preparation and Characterization of Machinable Mica Glass-Ceramics by the Sol-Gel Process.

ChemInform ◽  
1989 ◽  
Vol 20 (9) ◽  
Author(s):  
T. HAMASAKI ◽  
K. EGUCHI ◽  
Y. KOYANAGI ◽  
A. MATSUMOTO ◽  
T. UTSUNOMIYA ◽  
...  
Keyword(s):  
Sol Gel ◽  
Glass Ceramics ◽  
Sol Gel Process

Study of the structural and electrical properties of PMNT 68/32 ceramic prepared by a sol–gel process

2005 ◽  
Vol 78 (4) ◽  
pp. 329-336 ◽  
Author(s):  
Pawan Kumar ◽  
O. P. Thakur ◽  
Chandra Prakash ◽  
T. C. Goel
Keyword(s):  
Electrical Properties ◽  
Sol Gel ◽  
Structural And Electrical Properties ◽  
Sol Gel Process

Influence of Bi3.15Nd0.85Ti3O12 Buffer Layer on Structure and Electrical Properties of Bi0.94Ce0.06Fe0.97Ti0.03O3 Thin Films

2014 ◽  
Vol 703 ◽  
pp. 51-55
Author(s):  
Jia Zeng ◽  
Ming Hua Tang ◽  
Zhen Hua Tang ◽  
Yong Guang Xiao ◽  
Long Peng ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Buffer Layer ◽  
Current Density ◽  
Coercive Field ◽  
Remnant Polarization ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Si Substrates ◽  
Sol Gel Process

Bi0.94Ce0.06Fe0.97Ti0.03O3 and Bi0.94Ce0.06Fe0.97Ti0.03O3/Bi3.15Nd0.85Ti3O12 double-layered thin films were fabricated via sol-gel process on Pt/Ti/SiO2/Si substrates. The influence of Bi3.15Nd0.85Ti3O12 buffer layer on microstructure and electrical properties of Bi0.94Ce0.06Fe0.97Ti0.03O3 thin films were investigated in detail. Well-saturated P-E hysteresis loops can be obtained in Bi0.94Ce0.06Fe0.97Ti0.03O3 films with Bi3.15Nd0.85Ti3O12 buffer. The remnant polarization (2Pr) of the double-layered thin films is 112 μC/cm2. The coercive field (2Ec) of double-layered films is 672 kV/cm, which is much lower than that of the Bi0.94Ce0.06Fe0.97Ti0.03O3 thin films. The leakage current density of Bi0.94Ce0.06Fe0.97Ti0.03O3/Bi3.15Nd0.85Ti3O12 double-layered thin films is 4.12×10-5 A/cm2.

Barium Silicate Glasses and Glass Ceramics Prepared by the Sol-gel Process

1991 ◽  
Vol 50 (6) ◽  
pp. 151-157
Author(s):  
M. Chen ◽  
P. F. James ◽  
W. E. Lee ◽  
P. Korgui ◽  
J. S. Davies
Keyword(s):  
Sol Gel ◽  
Glass Ceramics ◽  
Silicate Glasses ◽  
Barium Silicate ◽  
Sol Gel Process

Effect of Ga content and sintering time on electrical properties of InGaZnO thin film transistors fabricated by sol–gel process

2011 ◽  
Vol 326 (1) ◽  
pp. 175-178 ◽  
Author(s):  
Jun Hyuk Choi ◽  
Soo Min Hwang ◽  
Chang Min Lee ◽  
Ji Cheol Kim ◽  
Geun Chul Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Sintering Time ◽  
Sol Gel Process ◽  
Ga Content
Sign in / Sign up

Export Citation Format

Share Document