Influence of Bi3.15Nd0.85Ti3O12 Buffer Layer on Structure and Electrical Properties of Bi0.94Ce0.06Fe0.97Ti0.03O3 Thin Films

2014 ◽  
Vol 703 ◽  
pp. 51-55
Author(s):  
Jia Zeng ◽  
Ming Hua Tang ◽  
Zhen Hua Tang ◽  
Yong Guang Xiao ◽  
Long Peng ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Buffer Layer ◽  
Current Density ◽  
Coercive Field ◽  
Remnant Polarization ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Si Substrates ◽  
Sol Gel Process

Bi0.94Ce0.06Fe0.97Ti0.03O3 and Bi0.94Ce0.06Fe0.97Ti0.03O3/Bi3.15Nd0.85Ti3O12 double-layered thin films were fabricated via sol-gel process on Pt/Ti/SiO2/Si substrates. The influence of Bi3.15Nd0.85Ti3O12 buffer layer on microstructure and electrical properties of Bi0.94Ce0.06Fe0.97Ti0.03O3 thin films were investigated in detail. Well-saturated P-E hysteresis loops can be obtained in Bi0.94Ce0.06Fe0.97Ti0.03O3 films with Bi3.15Nd0.85Ti3O12 buffer. The remnant polarization (2Pr) of the double-layered thin films is 112 μC/cm2. The coercive field (2Ec) of double-layered films is 672 kV/cm, which is much lower than that of the Bi0.94Ce0.06Fe0.97Ti0.03O3 thin films. The leakage current density of Bi0.94Ce0.06Fe0.97Ti0.03O3/Bi3.15Nd0.85Ti3O12 double-layered thin films is 4.12×10-5 A/cm2.

Effect of Film Thickness on Structure and Property of Pb(Zr0.53Ti0.47)O3 Thin Film

2010 ◽  
Vol 150-151 ◽  
pp. 112-117 ◽  
Author(s):  
Min Xian Shi ◽  
Wei Mao ◽  
Yan Qin ◽  
Zhi Xiong Huang ◽  
Dong Yun Guo
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Film Thickness ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Xrd Analysis ◽  
Structure And Property ◽  
Si Substrates ◽  
Sol Gel Process ◽  
Ferroelectric Hysteresis

Pb(Zr0.53Ti0.47)O3 thin films with thickness of 120nm, 190nm, 310nm, 440nm and 630nm were deposited on Pt/Ti/SiO2/Si substrates by sol-gel process through repeating spining process 2 times, 4 times, 6 times, 8 times and 10 times respectively. The structures of PZT films were investigated by SEM and XRD analysis. The ferroelectric hysteresis loops were recorded by Radiant Precision Workstation and dielectric properties were measured using an Agilent HP4294A impedance analyzer. X-ray diffraction indicated that with the film thickness increasing, the diffraction intensity increased. The thickness of PZT film had great effect on ferroelectric and dielectric properties. Conclusively when the film thickness was about 310nm, the PZT thin films possessed better ferroelectric and dielectric properties.

Electrical Properties Optimization of Ba0.9Sr0.1TiO3 Thin Films Deposited by Sol-Gel

2011 ◽  
Vol 277 ◽  
pp. 1-10 ◽  
Author(s):  
D. Fasquelle ◽  
M. Mascot ◽  
J.C. Carru
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Electrical Properties ◽  
Annealing Time ◽  
Remnant Polarization ◽  
Sol Gel ◽  
Si Substrates ◽  
Annealing Temperatures ◽  
Annealing Conditions ◽  
Average Size

This paper reports a study of Ba0.9Sr0.1TiO3films deposited on Pt/Ti/SiO2/Si substrates. The annealing temperatures were 750°C, 850°C and 950°C. An increase of the average size of grains was observed, from 60 nm at 750°C to 110 nm at 950°C, as well as an increase of the dielectric constant, remnant polarization and tunability. When the annealing time was decreased from 1 hour to 15 min, the dielectric constant and remnant polarization values have been increased. The optimized annealing conditions (950°C for 15 min) give the following results: εr= 780 and tgδ = 0.01 at 100 kHz, Pr = 13 µC/cm², Ec = 63 kV/cm and a tunability of 55%.

Microstructure and Properties of A-Site Doping Bi4-xYxTi3O12 Ferrroelectric Thin Films

2015 ◽  
Vol 815 ◽  
pp. 171-175
Author(s):  
Hong Cheng Liu ◽  
Wei Jun Zhang ◽  
Xiao Chen Zhang ◽  
Qian Yu ◽  
Jue Wang
Keyword(s):  
Thin Films ◽  
Coercive Field ◽  
Remnant Polarization ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Ferroelectric Thin Films ◽  
Phase Development ◽  
Sol Gel Process ◽  
A Site

s. Yttium-substituted bismuth titanate (Bi4-xYxTi3O12, BYT) thin films were deposited on the (111)Pt/Ti/SiO2(100) substrates by a modified Sol-Gel process and studied in this work in terms ofY3+-modified microstructure and phase development as well as ferroelectric properties. With the aid of the fist-principle, the position of Y3+substitution for Bi3+on the microstructure of BYT was studied.The phase change in the formation of BYT crystalline and the effect of Y3+substitution for Bi3+on the microstructure of BYT was studiedbyXRD. The results showed that the optimal properties of the obtained BYT ferroelectric thin films werex:0.6. The ferroelectric properties of the films were also investigated. When the Y-substituted contentxwas equal to 0.6, the remnant polarization was the largest. The remnant polarization 2Prvalue was equal to 16.02μC/cm2and the coercive fieldEcvalue was 88 kV/cm.

Synthesis and Ferroelectric Properties of Sol–Gel Derived Intergrowth-Superlattice-Structured SrBi4Ti4O15-Bi4Ti3O12 Thin Films

2011 ◽  
Vol 197-198 ◽  
pp. 1781-1784
Author(s):  
Hua Wang ◽  
Jian Li ◽  
Ji Wen Xu ◽  
Ling Yang ◽  
Shang Ju Zhou
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Annealing Temperature ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Si Substrates ◽  
Gel Processing ◽  
Coercive Electric Field ◽  
Clockwise Hysteresis

Intergrowth-superlattice-structured SrBi4Ti4O15–Bi4Ti3O12(SBT–BIT) films prepared on p-Si substrates by sol-gel processing. Synthesized SBT–BIT films exhibit good ferroelectric properties. As the annealing temperature increases from 600°C to 700°C, the remanent polarization Prof SBT–BIT films increases, while the coercive electric field Ecdecreases. SBT–BIT films annealed at 700°C have a Prvalue of 18.9µC/cm2which is higher than that of SBT (16.8µC/cm2) and BIT (14.6µC/cm2), and have the lowest Ecof 142 kV/cm which is almost the same as that of SBT and BIT. The C-V curves of Ag/SBT-BIT/p-Si heterostructures show the clockwise hysteresis loops which reveal the memory effect due to the polarization. The memory window in C-V curve of Ag/SBT-BIT/p-Si is larger than that of Ag/SBT/p-Si heterostructure or Ag/BIT/p-Si heterostructure.

Composition dependence of phase structure and electrical properties of BiMnO3-modified Bi0.5(Na0.8K0.2)0.5TiO3 thin films

RSC Advances ◽  
2015 ◽  
Vol 5 (77) ◽  
pp. 62713-62718 ◽  
Author(s):  
Peng Li ◽  
Wei Li ◽  
Jiwei Zhai ◽  
Bo Shen ◽  
Huarong Zeng ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Electrical Properties ◽  
Phase Structure ◽  
Composition Dependence ◽  
Sol Gel ◽  
Lead Free ◽  
Gel Method ◽  
Sol Gel Method ◽  
Si Substrates

Lead-free (1 − x)Bi0.5(Na0.8K0.2)0.5TiO3-xBiMnO3 (BNKT-xBMO, 0 < x < 0.025) thin films were deposited on Pt/Ti/SiO2/Si substrates by a sol–gel method, and the effects of BiMnO3 addition on the crystal structure and electrical properties were systematically investigated.

Relaxor Behavior in Ba0.8Sr0.2TiO3/ZrO2 Heterostructured Thin Films

2012 ◽  
Vol 1454 ◽  
pp. 89-96 ◽  
Author(s):  
Santosh K. Sahoo ◽  
H. Bakhru ◽  
Sumit Kumar ◽  
D. Misra ◽  
Y. N. Mohapatra ◽  
...  
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Oxygen Vacancies ◽  
Sol Gel ◽  
Single Layer ◽  
Relaxor Behavior ◽  
Bst Thin Films ◽  
Si Substrates ◽  
Sol Gel Process ◽  
Loss Maximum

ABSTRACTBa0.8Sr0.2TiO3 (BST) thin films and Ba0.8Sr0.2TiO3/ZrO2 heterostructured thin films have been successfully fabricated on Pt/Ti/SiO2/Si substrates by a sol-gel process. The dielectric properties of these films were measured as a function of temperature in the frequency range of 1 kHz to 1 MHz. It is clearly observed that the dielectric peaks exist and shift to high temperature with the increase of frequency indicating the presence of relaxor-type behavior in the films. Also it is seen that one dielectric peak is observed in single layer BST thin films whereas two dielectric peaks are observed in BST/ZrO2 heterostructured thin films due to the presence of two dielectric layers having different band gap energies. The variation of peak temperature Tm, corresponding to dielectric loss maximum, with frequency and fitting to Arrhenius law gives activation energy of 1.24 eV which is very close to the activation energy of oxygen vacancies in BaTiO3. Hence, oxygen vacancies are the active defects which are contributing to the relaxation process in these films.

Sm Doping Effects on Electrical Properties of Sol-Gel Derived SrBi2Ta 2O9 Films

2002 ◽  
Vol 747 ◽  
Author(s):  
Eisuke Tokumitsu ◽  
Masahito Kishi
Keyword(s):  
Electrical Properties ◽  
Coercive Field ◽  
Remanent Polarization ◽  
Sol Gel ◽  
Ferroelectric Film ◽  
Si Substrates ◽  
Doping Effects ◽  
Gel Technique

ABSTRACTWe have characterized (Sr,Sm)Bi2Ta 2O9 (SSBT) films fabricated by the sol-gel technique on Pt/Ti/SiO2/Si substrates. For ferroelectric-gate FET applications, a ferroelectric film which has a small remanent polarization and a relatively large coercive field is required. It is demonstrated that Sm doping in ferroelectric SBT films is effective to reduce the remanent polarization and enhance the coercive field. Sr0.5Sm0.2Bi2.2Ta2O9 films (150nm) crystallized at 850°C exhibits good electrical properties with a remanent polarization of 1.7 μC/cm2 and a coercive fields of 85 kV/cm. These values are suitable for ferroelectric-gate FET applications.

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