A polynomial model of transmission and reflection of electromagnetic monochromatic plane waves in lossless, non-magnetic multilayer thin films subjected to an external transverse voltage

2021 ◽  
Vol 53 (2) ◽  
Author(s):  
Mohammed K. M. Elhabbash ◽  
Mohd Mahadi Halim ◽  
Tiem Leong Yoon
Keyword(s):  
Thin Films ◽  
Plane Waves ◽  
Polynomial Model ◽  
Multilayer Thin Films ◽  
Magnetic Multilayer ◽  
Transmission And Reflection

scholarly journals Probing activation energy barrier distribution for reversal of strongly exchange-coupled magnetic multilayer thin films

2009 ◽  
Vol 95 (17) ◽  
pp. 172502 ◽  
Author(s):  
O. Ozatay ◽  
T. Hauet ◽  
S. H. Florez ◽  
J. A. Katine ◽  
A. Moser ◽  
...  
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Energy Barrier ◽  
Multilayer Thin Films ◽  
Magnetic Multilayer ◽  
Activation Energy Barrier ◽  
Barrier Distribution

Honeycomb-shaped magnetic multilayer thin films for cell trapping

RSC Advances ◽  
2016 ◽  
Vol 6 (29) ◽  
pp. 24299-24303 ◽  
Author(s):  
Chen-Yu Huang ◽  
Wei-Chieh Chang ◽  
Kun-Chieh Yeh ◽  
Han-Yi Tseng ◽  
Ming-Shinn Hsu ◽  
...  
Keyword(s):  
Thin Films ◽  
Domain Wall ◽  
Magnetic Thin Films ◽  
Multilayer Thin Films ◽  
Magnetic Multilayer ◽  
Cell Trapping

Honeycomb-shaped magnetic thin films with domain wall (DW) pinning geometry are designed to actively trap magnetically labeled cells.

Designed magnetic multilayer thin films fabricated via the layer-by-layer assembly of polycyanofullerenes

2014 ◽  
Vol 131 (17) ◽  
pp. n/a-n/a
Author(s):  
Jin Luo ◽  
Yanhua Wang ◽  
Rong Ren ◽  
Weilin Sun ◽  
Zhiquan Shen
Keyword(s):  
Thin Films ◽  
Multilayer Thin Films ◽  
Layer By Layer ◽  
Magnetic Multilayer ◽  
Layer By Layer Assembly ◽  
Layer Assembly

Nongyrotropic magneto-optical effects in metal-insulator magnetic multilayer thin films

2003 ◽  
Vol 45 (10) ◽  
pp. 1957-1965 ◽  
Author(s):  
V. I. Belotelov ◽  
A. K. Zvezdin ◽  
V. A. Kotov ◽  
A. P. Pyatakov
Keyword(s):  
Thin Films ◽  
Multilayer Thin Films ◽  
Magnetic Multilayer ◽  
Metal Insulator ◽  
Optical Effects

Characterization of reactive phase formation in sputter-deposited Ni/Al multilayer thin films using TEM

1996 ◽  
Vol 54 ◽  
pp. 1000-1001
Author(s):  
G. Lucadamo ◽  
K. Barmak ◽  
C. Michaelsen
Keyword(s):  
Thin Films ◽  
Phase Formation ◽  
Dark Field ◽  
Nickel Layer ◽  
Multilayer Thin Films ◽  
Cross Sectional ◽  
Dark Field Imaging ◽  
Transmission Electron ◽  
Sputter Deposited ◽  
Constant Heating

The subject of reactive phase formation in multilayer thin films of varying periodicity has stimulated much research over the past few years. Recent studies have sought to understand the reactions that occur during the annealing of Ni/Al multilayers. Dark field imaging from transmission electron microscopy (TEM) studies in conjunction with in situ x-ray diffraction measurements, and calorimetry experiments (isothermal and constant heating rate), have yielded new insights into the sequence of phases that occur during annealing and the evolution of their microstructure.In this paper we report on reactive phase formation in sputter-deposited lNi:3Al multilayer thin films with a periodicity A (the combined thickness of an aluminum and nickel layer) from 2.5 to 320 nm. A cross-sectional TEM micrograph of an as-deposited film with a periodicity of 10 nm is shown in figure 1. This image shows diffraction contrast from the Ni grains and occasionally from the Al grains in their respective layers.

The use of transmission and analytical electron microscopy in studying reactions and phase transformations in thin film

1993 ◽  
Vol 51 ◽  
pp. 842-843
Author(s):  
K. Barmak
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Transformations ◽  
Analytical Electron Microscopy ◽  
Ex Situ ◽  
Multilayer Thin Films ◽  
Absolute Concentration ◽  
Analytical Electron ◽  
Deposition Step

Generally, processing of thin films involves several annealing steps in addition to the deposition step. During the annealing steps, diffusion, transformations and reactions take place. In this paper, examples of the use of TEM and AEM for ex situ and in situ studies of reactions and phase transformations in thin films will be presented.The ex situ studies were carried out on Nb/Al multilayer thin films annealed to different stages of reaction. Figure 1 shows a multilayer with dNb = 383 and dAl = 117 nm annealed at 750°C for 4 hours. As can be seen in the micrograph, there are four phases, Nb/Nb3-xAl/Nb2-xAl/NbAl3, present in the film at this stage of the reaction. The composition of each of the four regions marked 1-4 was obtained by EDX analysis. The absolute concentration in each region could not be determined due to the lack of thickness and geometry parameters that were required to make the necessary absorption and fluorescence corrections.

TEM studies of solid-state reactions in sputter-deposited Nb/Al multilayer thin films

1996 ◽  
Vol 54 ◽  
pp. 1020-1021
Author(s):  
F. Ma ◽  
S. Vivekanand ◽  
K. Barmak ◽  
C. Michaelsen
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Stoichiometric Composition ◽  
Analytical Electron Microscopy ◽  
Grain Structure ◽  
Solid State Reactions ◽  
Multilayer Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sputter Deposited

Solid state reactions in sputter-deposited Nb/Al multilayer thin films have been studied by transmission and analytical electron microscopy (TEM/AEM), differential scanning calorimetry (DSC) and X-ray diffraction (XRD). The Nb/Al multilayer thin films for TEM studies were sputter-deposited on (1102)sapphire substrates. The periodicity of the films is in the range 10-500 nm. The overall composition of the films are 1/3, 2/1, and 3/1 Nb/Al, corresponding to the stoichiometric composition of the three intermetallic phases in this system.Figure 1 is a TEM micrograph of an as-deposited film with periodicity A = dA1 + dNb = 72 nm, where d's are layer thicknesses. The polycrystalline nature of the Al and Nb layers with their columnar grain structure is evident in the figure. Both Nb and Al layers exhibit crystallographic texture, with the electron diffraction pattern for this film showing stronger diffraction spots in the direction normal to the multilayer. The X-ray diffraction patterns of all films are dominated by the Al(l 11) and Nb(l 10) peaks and show a merging of these two peaks with decreasing periodicity.

Progressive Debonding of Multilayer Interconnect Structures

1997 ◽  
Vol 473 ◽  
Author(s):  
Michael Lane ◽  
Robert Ware ◽  
Steven Voss ◽  
Qing Ma ◽  
Harry Fujimoto ◽  
...  
Keyword(s):  
Thin Films ◽  
Crack Growth ◽  
Driving Force ◽  
Adhesion Energy ◽  
Time Dependent ◽  
Multilayer Thin Films ◽  
Processing Conditions ◽  
Interface Morphology ◽  
Entire Sample ◽  
Crack Growth Velocity

ABSTRACTProgressive (or time dependent) debonding of interfaces poses serious problems in interconnect structures involving multilayer thin films stacks. The existence of such subcriticai debonding associated with environmentally assisted crack-growth processes is examined for a TiN/SiO2 interface commonly encountered in interconnect structures. The rate of debond extension is found to be sensitive to the mechanical driving force as well as the interface morphology, chemistry, and yielding of adjacent ductile layers. In order to investigate the effect of interconnect structure, particularly the effect of an adjacent ductile Al-Cu layer, on subcriticai debonding along the TiN/SiO2 interface, a set of samples was prepared with Al-Cu layer thicknesses varying from 0.2–4.0 μm. All other processing conditions remained the same over the entire sample run. Results showed that for a given crack growth velocity, the debond driving force scaled with Al-Cu layer thickness. Normalizing the data by the critical adhesion energy allowed a universal subcriticai debond rate curve to be derived.

Sign in / Sign up

Export Citation Format

Share Document