Spin logic operations based on magnetization switching by asymmetric spin current

2021 ◽  
Vol 65 (2) ◽  
Author(s):  
Yucai Li ◽  
Nan Zhang ◽  
Kaiyou Wang
Keyword(s):  
Spin Current ◽  
Magnetization Switching ◽  
Spin Logic ◽  
Logic Operations

Spin orbit torque driven magnetization switching with sputtered Bi2Se3 spin current source

2019 ◽  
Vol 52 (22) ◽  
pp. 224001 ◽  
Author(s):  
Rajagopalan Ramaswamy ◽  
Tanmay Dutta ◽  
Shiheng Liang ◽  
Guang Yang ◽  
M S M Saifullah ◽  
...  
Keyword(s):  
Current Source ◽  
Spin Current ◽  
Spin Orbit ◽  
Magnetization Switching

Partial spin absorption induced magnetization switching and its voltage-assisted improvement in an asymmetrical all spin logic device at the mesoscopic scale

2017 ◽  
Vol 111 (5) ◽  
pp. 052407 ◽  
Author(s):  
Yue Zhang ◽  
Zhizhong Zhang ◽  
Lezhi Wang ◽  
Jiang Nan ◽  
Zhenyi Zheng ◽  
...  
Keyword(s):  
Logic Device ◽  
Mesoscopic Scale ◽  
Magnetization Switching ◽  
Spin Logic ◽  
All Spin Logic

Spin-current magnetization switching in CPP GMR spin valves

2004 ◽  
Author(s):  
F.B. Mancoff ◽  
R.W. Dave ◽  
N.D. Rizzo ◽  
T.C. Eschrich ◽  
B.N. Engel ◽  
...  
Keyword(s):  
Spin Current ◽  
Spin Valves ◽  
Magnetization Switching

Manipulating Spin Current in the Magnetic Nanopillar

2007 ◽  
Vol 7 (1) ◽  
pp. 259-264 ◽  
Author(s):  
T. Yang ◽  
A. Hirohata ◽  
T. Kimura ◽  
Y. Otani
Keyword(s):  
Layer Thickness ◽  
Spin Relaxation ◽  
Spin Diffusion ◽  
Diffusion Length ◽  
Ferromagnetic Layer ◽  
Spin Current ◽  
Spin Accumulation ◽  
Magnetization Switching ◽  
Capping Layer ◽  
Spin Diffusion Length

Because of the capability to switch the magnetization of a nanoscale magnet, the spin transfer effect is critical for the application of magnetic random access memory. For this purpose, it is important to enhance the spin current carried by the charge current. Calculations based on the diffusive spin-dependent transport equations reveal that the magnitude of spin current can be tuned by modifying the ferromagnetic layer and the spin relaxation process in the device. Increasing the ferromagnetic layer thickness is found to enhance both the spin current and the spin accumulation. On the other hand, a strong spin relaxation in the capping layer also increases the spin current but suppresses the spin accumulation. To demonstrate the theoretical results, nanopillar structures with the size of ∼100 nm are fabricated and the current-induced magnetization switching behaviors are experimentally studied. When the ferromagnetic layer thickness is increased from 3 nm to 20 nm, the critical switching current for the current-induced magnetization switching is significantly reduced, indicating the enhancement of the spin current. When the Au capping layer with a short spin-diffusion length replaces the Cu capping layer with a long spin-diffusion length, the reduction of the critical switching current is also observed.

The deterministic field-free magnetization switching of perpendicular ferrimagnetic Tb-Co alloy film induced by interfacial spin current

2021 ◽  
Vol 119 (3) ◽  
pp. 032409
Author(s):  
Yonghai Guo ◽  
Yunzhuo Wu ◽  
Yang Cao ◽  
Xiaoxue Zeng ◽  
Bo Wang ◽  
...  
Keyword(s):  
Spin Current ◽  
Alloy Film ◽  
Magnetization Switching

scholarly journals On a model of magnetization switching driven by a spin current: A multiscale approach

2015 ◽  
Vol 13 (7) ◽  
pp. 1875-1904
Author(s):  
Abdallah Naoufel Ben ◽  
Elise Fouassier ◽  
Clément Jourdana ◽  
David Sanchez
Keyword(s):  
Spin Current ◽  
Multiscale Approach ◽  
Magnetization Switching

scholarly journals Magnetization switching of a perpendicular nanomagnet induced by vertical nonlocal injection of pure spin current

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Hirofumi Suto ◽  
Tazumi Nagasawa ◽  
Taro Kanao ◽  
Kenichiro Yamada ◽  
Koichi Mizushima
Keyword(s):  
Spin Injection ◽  
Spin Current ◽  
Pure Spin ◽  
Spin Torque ◽  
Device Structure ◽  
Magnetization Switching ◽  
Spintronic Devices ◽  
Perpendicular Magnetization ◽  
Vertical Injection ◽  
Current Flows

AbstractInjection of pure spin current using a nonlocal geometry is a promising method for controlling magnetization in spintronic devices from the viewpoints of increasing freedom in device structure and avoiding problems related to charge current. Here, we report an experimental demonstration of magnetization switching of a perpendicular magnetic nanodot induced by vertical injection of pure spin current from a spin polarizer with perpendicular magnetization. In comparison with direct spin injection, the current amplitude required for magnetization switching is of the same order and shows smaller asymmetry between parallel-to-antiparallel and antiparallel-to-parallel switching. Simulation of spin accumulation reveals that, in the case of nonlocal spin injection, the spin torque is symmetric between the parallel and antiparallel configuration because current flows through only the spin polarizer, not the magnetic nanodot. This characteristic of nonlocal spin injection is the origin of the smaller asymmetry of the switching current and can be advantageous in spintronic applications.

scholarly journals Investigation on the Effect of Femtosecond Laser Induced Spin Transfer Torque of GdFeCo Alloy

2021 ◽  
Vol 11 (14) ◽  
pp. 6501
Author(s):  
Haozhe Huang ◽  
Haiwei Wang ◽  
Zhihao Zeng ◽  
Rongyao Wang ◽  
Xinyu Zhang ◽  
...  
Keyword(s):  
Data Storage ◽  
Current Density ◽  
Magnetization Reversal ◽  
Spin Current ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Magnetic Data ◽  
Magnetization Switching ◽  
Switching Speed ◽  
Novel Approach

All-optical magnetic switching (AOS) provides a novel approach to improve writing ability and energy efficiency compared to those utilized in the mainstream magnetic data storage products. Rare earth-transition metals (RE-TM) exhibit extremely fast magnetization switching induced by one single incident linearly polarized laser pulse; however, the mechanism is still ambiguous. Here, we show by atomistic spin simulation that the laser induced spin transfer torque dominates the magnetization reversal of Fe sublattice in Gd25Fe75 alloy, and that the switching speed of Gd25Fe75 alloy is relevant to the amount of spin current. This implies that a possible helicity independent mechanism underlies the RE-TM alloy AOS process. We also find that the greater the spin current density the faster the magnetization switching, and the time magnetization reversal of Gd and Fe takes is also affected by the spin current density.

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