Surface Plasmon-Enhanced Spontaneous Emission from InGaN/GaN Multiple Quantum Wells by Indium Nanoparticles Fabricated Using Nanosphere Lithography

Plasmonics ◽  
2013 ◽  
Vol 8 (3) ◽  
pp. 1395-1400 ◽  
Author(s):  
Yun-Chorng Chang ◽  
Chung-Bin Tseng
1988 ◽  
Vol 52 (10) ◽  
pp. 798-800 ◽  
Author(s):  
M. Krahl ◽  
J. Christen ◽  
D. Bimberg ◽  
G. Weimann ◽  
W. Schlapp

2011 ◽  
Vol 415-417 ◽  
pp. 537-540
Author(s):  
Te Li ◽  
Er Juan Hao

The InP-based wafers with InGaAsP multiple Quantum Wells (QWs) were designed for the loss compensation of surface plasmon polaritons (SPPs). Electrical-pumped device was fabricated by conventional III-V processes and e-Beam lithography (EBL) technology. When forward voltage is added on the device, it is observed that the gain of the quantum wells at 1.55μm assist the propagation of SPPs.


2014 ◽  
Vol 2 (5) ◽  
pp. 451-458 ◽  
Author(s):  
Jun Yin ◽  
Yang Li ◽  
Shengchang Chen ◽  
Jing Li ◽  
Junyong Kang ◽  
...  

2018 ◽  
Vol 52 (14) ◽  
pp. 1822-1826
Author(s):  
G. Pozina ◽  
M. A. Kaliteevski ◽  
E. V. Nikitina ◽  
A. R. Gubaidullin ◽  
K. M. Morozov ◽  
...  

2017 ◽  
Vol 6 (1) ◽  
pp. 30 ◽  
Author(s):  
Kyung Rock Son ◽  
Byeong Ryong Lee ◽  
Min Ho Jang ◽  
Hyun Chul Park ◽  
Yong Hoon Cho ◽  
...  

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