Transmission electron microscope specimen preparation of Zn powders using the focused ion beam lift-out technique

The focused ion beam (FIB) has become an indispensable tool for a variety of applications in materials science, including that of specimen preparation for the transmission electron microscope (TEM). Several FIB specimen preparation techniques have been developed, but some problems result when FIB specimens are analyzed in the TEM. One of these is X-ray fluorescence from bulk material surrounding the thin membrane in FIB-prepared samples. This paper reports on a new FIB specimen preparation method which was devised for the reduction of X-ray fluorescence during energy dispersive X-ray spectroscopy (EDS) in the TEM.Figure 1 shows three membrane geometries that were investigated in this study on a single-crystal Si substrate with a RF sputter-deposited 50 nm Ni film. Membrane 1 is the most commonly reported geometry in the literature, with an approximately 20 urn wide trench and a membrane having a single wedge with a 1.5° incline.

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Transmission electron microscope study of polyphase and discordant monazites: Site-specific specimen preparation using the focused ion beam technique

Geology ◽

10.1130/g19582.1 ◽

2003 ◽

Vol 31 (11) ◽

pp. 973 ◽

Cited By ~ 69

Author(s):

Anne-Magali Seydoux-Guillaume ◽

Philippe Goncalves ◽

Richard Wirth ◽

Alexander Deutsch

Keyword(s):

Electron Microscope ◽

Transmission Electron Microscope ◽

Electron Microscope Study ◽

Focused Ion Beam ◽

Ion Beam ◽

Specimen Preparation ◽

Site Specific ◽

Transmission Electron ◽

Transmission Electron Microscope Study ◽

Beam Technique

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Focused Ion Beam Analysis of Low-K Dielectrics

ISTFA 2000: Conference Proceedings from the 26th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2000p0397 ◽

2000 ◽

Author(s):

H. J. Bender ◽

R. A. Donaton

Keyword(s):

Electron Microscope ◽

Cross Section ◽

Focused Ion Beam ◽

Ion Beam ◽

Single Step ◽

Specimen Preparation ◽

Transmission Electron ◽

Beam Analysis ◽

Low K ◽

Scanning Electron

Abstract The characteristics of an organic low-k dielectric during investigation by focused ion beam (FIB) are discussed for the different FIB application modes: cross-section imaging, specimen preparation for transmission electron microscopy, and via milling for device modification. It is shown that the material is more stable under the ion beam than under the electron beam in the scanning electron microscope (SEM) or in the transmission electron microscope (TEM). The milling of the material by H2O vapor assistance is strongly enhanced. Also by applying XeF2 etching an enhanced milling rate can be obtained so that both the polymer layer and the intermediate oxides can be etched in a single step.

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Redeposition effects in transmission electron microscope specimens of FeAl–WC composites prepared using a focused ion beam

Micron ◽

10.1016/s0968-4328(03)00007-6 ◽

2003 ◽

Vol 34 (2) ◽

pp. 97-107 ◽

Cited By ~ 33

Author(s):

J.M. Cairney ◽

P.R. Munroe

Keyword(s):

Electron Microscope ◽

Transmission Electron Microscope ◽

Focused Ion Beam ◽

Ion Beam ◽

Transmission Electron

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Transmission Electron Microscope Specimen Preparation of Metal Matrix Composites Using the Focused Ion Beam Miller

Microscopy and Microanalysis ◽

10.1007/s100050010048 ◽

2000 ◽

Vol 6 (5) ◽

pp. 452-462 ◽

Cited By ~ 4

Author(s):

Julie M. Cairney ◽

Robert D. Smith ◽

Paul R. Munroe

Keyword(s):

Electron Microscope ◽

Metal Matrix Composites ◽

Transmission Electron Microscope ◽

Metal Matrix ◽

Focused Ion Beam ◽

Ion Beam ◽

Matrix Composites ◽

Transmission Electron ◽

The Matrix ◽

Ceramic Reinforcement

AbstractTransmission electron microscope samples of two types of metal matrix composites were prepared using both traditional thinning methods and the more novel focused ion beam miller. Electropolishing methods were able to produce, very rapidly, thin foils where the matrix was electron transparent, but the ceramic reinforcement particles remained unthinned. Thus, it was not possible in these foils to study either the matrix-reinforcement interface or the microstructure of the reinforcement particles themselves. In contrast, both phases in the composites prepared using the focused ion beam miller thinned uniformly. The interfaces in these materials were clearly visible and the ceramic reinforcement was electron transparent. However, microstructural artifacts associated with ion beam damage were also observed. The extent of these artifacts and methods of minimizing their effect were dependent on both the materials and the milling conditions used.

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Multiple Double Cross-Section Transmission Electron Microscope Sample Preparation of Specific Sub-10 nm Diameter Si Nanowire Devices

Microscopy and Microanalysis ◽

10.1017/s1431927611011974 ◽

2011 ◽

Vol 17 (6) ◽

pp. 889-895 ◽

Cited By ~ 5

Author(s):

Lynne M. Gignac ◽

Surbhi Mittal ◽

Sarunya Bangsaruntip ◽

Guy M. Cohen ◽

Jeffrey W. Sleight

Keyword(s):

Electron Microscope ◽

High Resolution ◽

Cross Section ◽

Transmission Electron Microscope ◽

Focused Ion Beam ◽

Ion Beam ◽

Si Nanowire ◽

Dual Beam ◽

Transmission Electron ◽

High Resolution Tem

AbstractThe ability to prepare multiple cross-section transmission electron microscope (XTEM) samples from one XTEM sample of specific sub-10 nm features was demonstrated. Sub-10 nm diameter Si nanowire (NW) devices were initially cross-sectioned using a dual-beam focused ion beam system in a direction running parallel to the device channel. From this XTEM sample, both low- and high-resolution transmission electron microscope (TEM) images were obtained from six separate, specific site Si NW devices. The XTEM sample was then re-sectioned in four separate locations in a direction perpendicular to the device channel: 90° from the original XTEM sample direction. Three of the four XTEM samples were successfully sectioned in the gate region of the device. From these three samples, low- and high-resolution TEM images of the Si NW were taken and measurements of the NW diameters were obtained. This technique demonstrated the ability to obtain high-resolution TEM images in directions 90° from one another of multiple, specific sub-10 nm features that were spaced 1.1 μm apart.

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Development of a focused ion beam (FIB) technique to minimize X-ray fluorescence during energy dispersive X-ray spectroscopy (EDS) of FIB specimens in the transmission electron microscope (TEM)

Ultramicroscopy ◽

10.1016/s0304-3991(99)00081-9 ◽

1999 ◽

Vol 80 (2) ◽

pp. 69-84 ◽

Cited By ~ 21

Author(s):

David M Longo ◽

James M Howe ◽

William C Johnson

Keyword(s):

Electron Microscope ◽

Transmission Electron Microscope ◽

Focused Ion Beam ◽

Ion Beam ◽

Energy Dispersive ◽

X Ray ◽

Transmission Electron

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Observation of Ge2Sb2Te5 thin film phase transition behavior according to the number of cycles using Transmission Electron Microscope and Scanning Probe Microscope

MRS Proceedings ◽

10.1557/proc-0961-o03-04 ◽

2006 ◽

Vol 961 ◽

Author(s):

Hyunjung Kim ◽

Sikyung Choi ◽

Sukhoon Kang ◽

Kyuhwan Oh ◽

Soonyong Kweon

Keyword(s):

Thin Film ◽

Phase Transition ◽

Electron Microscope ◽

Phase Change ◽

Transmission Electron Microscope ◽

Focused Ion Beam ◽

Ion Beam ◽

Phase Transition Behavior ◽

Transition Behavior ◽

Transmission Electron

ABSTRACTRecently, the development of information technology (IT) increases the demands of memory devices. Phase change random access memory (PRAM), based on the reversible phase change of the chalcogenide alloy, Ge2Sb2Te5, is widely regarded as a favourite candidate for the next generation memory. Because of PRAM has a simple cell structure with high scalability; it is non-volatile, has a relatively high read/write operation speed (Â50ns). The PRAM operation relies on the fact that chalcogenide-based materials can be reversible switched from an amorphous phase to a crystalline state by an external electrical current. It is important to study the electrical property with set/reset cycles, since film thickness shrinkage occurs with the phase transition.In this work, we fabricated the 100nm amorphous Ge2Sb2Te5 thin film on TiN/Ti/Si substrate using dc-magnetron sputtering. The 50X50§2 isolated Ge2Sb2Te5 cell was lithographed by the lift-off pattern and wet etching. And TiN top electrode was deposited using pattern align process at room temperature after the SiO2 insulator CMP. Phase transition behavior with the set/reset cycle was observed using I-V measurement and transmission electron microscope (TEM) on isolated Ge2Sb2Te5 cell. The set/reset programming was operated using tungsten SPM tip which was fabricated using focused ion beam (FIB) lithography. I-V curve which was observed by the I-V probe clearly showed that the phase transition was occurred by applying the electric field through the I-V probe. The resistivity difference between amorphous and crystal state was more than 102. After the phase transition, it was also demonstrated with transmission electron microscope (TEM) analysis. For the preparation of TEM specimen of the amorphous and crystalline cell, focused ion beam (FIB) lithography was adopted.

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